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RR1200B

0.08 A, 12000 V, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:EDI [Electronic devices inc.]

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器件参数
参数名称
属性值
厂商名称
EDI [Electronic devices inc.]
包装说明
O-PALF-W2
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
16 V
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
6 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最大输出电流
0.08 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大重复峰值反向电压
12000 V
最大反向恢复时间
0.25 µs
表面贴装
NO
技术
AVALANCHE
端子形式
WIRE
端子位置
AXIAL
文档预览
EF to RR
HIGH VOLTAGE HIGH CURRENT MINIATURE
RECTIFIERS
SMALL SIZE MOLDED PACKAGES
PRV 1,000 TO12,000 VOLTS
FAST RECOVERY(R_ SERIES)
AVALANCHE CHARACTERISTICS
EDI
Type No.
Peak
ReverseVoltage
PRV(Volts )
EF100
EF150
EF200
EG200
EG250
EG300
EH300
EH350
EH400
EK450
EK500
EK600
EM700
EM800
EP900
EP1000
ER1100
ER1200
RF160B
RF200B
RG300B
RK300B
RK400B
RK500B
RK600B
RM700B
RM800B
RP900B
RP1000B
RR1100B
RR1200B
RF160A
RF200A
RG300A
RK300A
RK400A
RK500A
RK600A
RM800A
RP1000A
RR1200A
1,000
1,500
2,000
2,000
2,500
3,000
3,000
3,500
4,000
4,500
5,000
6,000
7,000
8,000
9,000
10,000
11,000
12,000
1,600
2,000
3,000
3,000
4,000
5,000
6,000
7,000
8,000
9,000
10,000
11,000
12,000
1,600
2,000
3,000
3,000
4,000
5,000
6,000
8,000
10,000
12,000
Max.Fwd Voltage
Max. P
eak Surge
Avg.Fwd.Current
o
o
Drop at 25 C and I
O
Cureent, I
FSM
I
O
at 50 C
(mA)
V
F
(Volts)
(8.3 ms) (A
mps)
FIG.1
FIG.2
STANDARD RECOVERY
600
2.0
35
600
2.0
35
600
2.0
35
400
3.0
30
400
3.0
30
400
3.0
30
300
4.0
25
300
4.0
25
300
4.0
25
200
6.0
15
200
6.0
15
200
6.0
15
175
8.0
12
175
8.0
12
150
10.0
10
150
10.0
10
100
12.0
8
100
12.0
8
250 NANOSECOND RECOVERY(F IG.4)
500
2.6
25
500
2.6
25
350
3.9
20
150
7.8
10
150
7.8
10
150
7.8
10
150
7.8
10
125
10.4
8
125
10.4
8
100
13.0
7
100
13.0
7
80
15.6
6
80
15.6
6
150 NANOSECOND RECOVERY(F IG.4)
500
2.6
25
500
2.6
25
350
3.9
20
150
7.8
10
150
7.8
10
150
7.8
10
150
7.8
10
125
10.4
8
13.0
100
7
80
15.6
6
Repetitive Peak
Forward Current
I
FRM
(Amps)
8.0
8.0
8.0
6.0
6.0
6.0
5.0
5.0
5.0
3.0
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
8.0
8.0
6.0
3.0
3.0
3.0
3.0
2.0
2.0
1.5
1.5
1.0
1.0
8.0
8.0
6.0
3.0
3.0
3.0
3.0
2.0
1.5
1.0
EDI reserves the right to change these specifications at any time without notice
EF to RR
ELECTRICAL.CHARACTERISTICS(at T
A
=25
C
Unless Otherwise Speclfied)
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and100 C, I
R
Ambient Operating Temperature Range,T
A
Storage Temperature Range,T
STG
o
o
O
2
50
A
o
A
-55 C to +150 C
-55 C to +150 C
o
o
o
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100
100
FIG.2
NON- REPETITIVE SURGE CURRENT
0.1SEC
1.0SEC
% RATED FWD CURRENT
75
% MAXIMUM SURGE
75
50
50
25
25
0
0
25
50
75
100
O
0
125
150
1
2
3
4
5
6
7 8 9 10
20
30
40 50 60
AMBIENT TEMPERATURE
( C)
CYCLES(60 Hz)
0.028
DIA.
0.032
FIG.3
MECHANICAL DIMENSIONS
1.0 MIN.
0.380 MAX.
1.0 MIN.
All dimensions in inches
o
Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250
C
0.160MAX.DIA.
FIG.4
TEST CIRCUIT
TYPICAL REVERSE RECOVERY WAVEFORM
T RR
R1
50 OHM
D.U.T.
PULSE
GENERATOR
R2
1 OHM
SCOPE
+
-
IF= IO
IRR=0.5
IR=2
IO
IO
I =Average Forward Current at 50
C
O
O
R1, R2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR-HEWLETT PACKARD 214A OR EQUIV
.
IKC REP.RA
TE, 10
SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
* FAX 914-965-5531
* 1-800-678-0828
*
Ee-mail:sales@edidiodes.com Wwebsite:
http://www.edidiodes.com
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