PRELIMINARY
RT5N14BC
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT5N14BC is a one chip transistor with built-in bias
resistor, PNP type is RT5P14BC.
OUTLINE DRAWING
2.8
0.65
1.5
0.65
Unit: mm
FEATURE
Built-in bias resistor
（R=10kΩ）
High collector current
（Ic=0.5A）
Mini package for easy mounting
0.95
①
②
③
2.8
1.90
0.95
0.4
0½0.1
APPLICATION
1.1
0.13
C
(OUT)
B
(IN)
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
0.8
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：BASE
R
E
(GND)
②：EMITTER
③：COLLECTOR
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
50
5
50
500
200
＋150
-55½＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
N
.
C
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
CEO
I
CBO
I
EBO
V
CE(sat)
G
I
R
f
T
PARAMETER
C to E break down voltage
Collector cut off current
Emitter cut off current
C to E saturation voltage
DC forward current gain
Emitter-base resistor
Gain band width product
TEST CONDITION
I
C
=1mA
V
CB
=50V
V
EB
=5V
I
C
=50mA，I
B
=2.5mA
V
CE
=5V，I
E
=100mA
―
V
CE
=10V，I
E
=-5mA，f=100MHz
LIMIT
MIN
50
―
0.385
―
56
7
―
TYP
―
―
―
―
―
10
150
MAX
―
0.5
0.714
0.3
―
13
―
UNIT
V
μA
mA
V
―
kΩ
MHz
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT5N14BC
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
TYPICAL CHARACTERISTICS
(Ta=25℃)
250
COLLECTOR DISSIPATION
コレクタ損失－周囲温度特性
VS.AMBIENT TEMPERATURE
1000
直流電流増幅率－コレクタ電流
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
VCE=5V
COLLECTOR DISSIPATION Pc(mW)
コレクタ損失 Pc(mW)
200
DC FORWARD CURRENT GAIN GI
直流電流増幅率 GI
0
50
100
AMBIENT TEMPERATURE Ta (℃)
周囲温度 Ta(℃)
150
100
150
100
10
50
0
1
1
10
100
COLLECTOR CURRENT Ic (mA)
コレクタ電流 IC(mA)
1000
INPUT ON VOLTAGE
入力オン電圧－コレクタ電流
VS.COLLECTOR CURRENT
10
VCE=0.2V
1000
コレクタ½エミッタ間½和電圧 VCE(sat)
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat) （½V）
COLLECTOR TO EMITTER SATURATION
コレクタ½エミッタ間½和電圧－コレクタ電流
VOLTAGE VS COLLECTOR CURRENT
VCE=5V
INPUT ON VOLTAGE VI(on) (V)
入力オン電圧 VI(ON)(V)
100
1
10
0.1
1
10
100
COLLECTOR CURRENT Ic (mA)
コレクタ電流 IC(mA)
1
1
10
100
1000
COLLECTOR CURRENT Ic (mA)
コレクタ電流 IC(mA)
10
COLLECTOR CURRENT
コレクタ電流－入力オフ電圧
VS.INPUT OFF VOLTAGE
VCE=5V
COLLECTOR CURRENT Ic(mA)
コレクタ電流 IC(mA)
1
0.1
0.01
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE VI(off) (V)
入力オフ電圧 VI(OFF)(V)
2
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Apr.2013
