RUH40140M
N-Channel Advanced Power MOSFET
Features
• 40V/140A,
R
DS (ON)
=1.4mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=1.9mΩ(Typ.)@V
GS
=4.5V
D
D D
D
Pin Description
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
SS
S
PIN1
PIN1
PDFN5060
Applications
• DC/DC Converters
• On board power for server
• Fast Charge
D
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
40
±20
150
-55 to 150
50
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
①
300μs Pulse Drain Current Tested
Continuous Drain Current@T
C
(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
560
140
88
26
21
126
50
4.2
2.7
A
I
D
②
A
Continuous Drain Current@T
A
(V
GS
=10V)
Maximum Power Dissipation@T
C
P
D
Maximum Power Dissipation@T
A
③
③
W
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
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RUH40140M
Symbol
R
JC
R
JA
③
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Rating
0.99
30
Unit
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
506
mJ
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
Parameter
Test Condition
RUH40140M
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
DS
=40V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=4.5V, I
DS
=35A
V
GS
=10V, I
DS
=50A
40
1
30
1
3
±100
1.9
1.4
2.5
1.8
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=50A, V
GS
=0V
I
SD
=50A, dl
SD
/dt=100A/µs
16
26
1.2
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
1.2
3620
1580
58
13
Ω
pF
V
DD
=20V,I
DS
=50A,
V
GEN
=10V,R
G
=4.7Ω
26
78
24
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=32V, V
GS
=10V,
I
DS
=50A
59
11
19
nC
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
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RUH40140M
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
The package limitation current is 50A.
③When mounted on 1 inch square copper board, t≤10sec.
④Limited by TJmax, IAS =45A, VDD = 32V, RG = 50Ω, Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
RUH40140M
Marking
RUH40140M
Package
PDFN5060
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
13''
12mm
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
3
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RUH40140M
Typical Characteristics
140
120
Power Dissipation
160
140
Drain Current
P
D
- Power (W)
100
80
60
40
20
0
0
25
50
75
100
125
150
I
D
- Drain Current (A)
120
100
80
60
40
20
0
25
VGS=10V
50
75
100
125
150
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
5
1000
Safe Operation Area
R
DS(ON)
limited
Drain Current
Ids=50A
4
I
D
- Drain Current (A)
100
10
DC
10µs
100µs
1ms
10ms
3
2
1
1
0.1
0.01
T
C
=25°C
0.1
1
10
100
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
R
θJC
=0.99
°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Shenzhen City Ruichips Semiconductor Co., Ltd
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RUH40140M
Typical Characteristics
300
Output Characteristics
VGS=10V，8V，7V
4V
5
Drain-Source On Resistance
250
200
150
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
4
3
3V
100
50
0
0
1
2
3
4
5
2
4.5V
2V
1
10V
0
30
60
90
120
0
V
DS
- Drain-Source Voltage (V)
2.5
I
D
- Drain Current (A)
Drain-Source On Resistance
V
GS
=10V
I
DS
=50A
100
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
2.0
1.5
10
1.0
T
J
=150°C
1
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=1.4mΩ
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
Capacitance
5000
Gate Charge
V
GS
- Gate-Source Voltage (V)
10
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
C - Capacitance (pF)
Frequency=1.0MHz
4000
VDS=32V
IDS=50A
Ciss
3000
2000
Coss
1000
0
1
Crss
10
100
V
DS
- Drain-Source Voltage (V)
Q
G
- Gate Charge (nC)
Shenzhen City Ruichips Semiconductor Co., Ltd
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