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RURH1560CC

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-218AC,

器件类别:分立半导体    二极管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
ULTRA FAST SOFT RECOVERY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JEDEC-95代码
TO-218AC
JESD-30 代码
R-PSFM-T3
JESD-609代码
e0
最大非重复峰值正向电流
200 A
元件数量
2
相数
1
端子数量
3
最高工作温度
175 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.06 µs
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
MUR3040PT, RURH1540CC, MUR3060PT,
RURH1560CC
Data Sheet
January 2000
File Number
2774.4
15A, 400V - 600V Ultrafast Dual Diodes
MUR3040PT, RURH1540CC, MUR3060PT, and
RURH1560CC are ultrafast dual diodes (t
rr
< 55ns) with
soft recovery characteristics. They have a low forward
voltage drop and are of planar, silicon nitride passivated,
ion-implanted, epitaxial construction.
These devices are intended for use as energy
steering/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and ultrafast recovery
with soft recovery characteristics minimizes ringing and
electrical noise in many power switching circuits thus
reducing power loss in the switching transistor.
Formerly developmental type TA09905.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
MUR3040PT
RURH1540CC
MUR3060PT
RURH1560CC
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
BRAND
MUR3040PT
RURH1540C
MUR3060PT
RURH1560C
Packaging
JEDEC TO-218AC
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
1
A
2
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
MUR3040PT
RURH1540CC
400
400
400
15
42
200
100
20
-55 to 175
MUR3060PT
RURH1560CC
600
600
600
15
30
200
100
20
-55 to 175
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 145
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
(Square Wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
©2001 Fairchild Semiconductor Corporation
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Rev. A
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC
Electrical Specifications
SYMBOL
V
F
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
MUR3040PT, RURH1540CC
TEST CONDITION
I
F
= 15A
I
F
= 15A, T
C
= 150
o
C
I
R
V
R
= 400V
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 15A, dI
F
/dt = 100A/
µ
s
t
a
t
b
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
µ
s (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
µ
s (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 15A, dI
F
/dt = 100A/
µ
s
I
F
= 15A, dI
F
/dt = 100A/
µ
s
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
30
17
-
MAX
1.25
1.12
100
-
500
-
55
60
-
-
1.5
MUR3060PT, RURH1560CC
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
30
20
-
MAX
1.5
1.2
-
100
-
500
55
60
-
-
1.5
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
ns
ns
ns
ns
o
C/W
Typical Performance Curves
80
500
100
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
175
o
C
10
10
175
o
C
100
o
C
25
o
C
1.0
100
o
C
0.1
0.01
25
o
C
1
0
0.5
1.0
V
F
, FORWARD VOLTAGE (V)
1.5
2.0
0.001
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Rev. A
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC
Typical Performance Curves
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
60
50
40
t, TIME (ns)
30
ta
20
10
0
1
I
F
, FORWARD CURRENT (A)
10
20
tb
16
14
DC
12
10
8
6
4
2
0
120
SQ. WAVE
trr
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
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