RURP640CC, RURP650CC,
RURP660CC
April 1995
6A, 400V - 600V Ultrafast Dual Diodes
Package
JEDEC TO-220AB
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (t
RR
<
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc-
tion.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc-
ing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER
RURP640CC
RURP650CC
RURP660CC
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
RURP640C
RURP650C
RURP660C
Symbol
K
A
1
A
2
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
Absolute Maximum Ratings
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
RURP640CC
400
400
400
6
12
60
50
10
-65 to +175
RURP650CC
500
500
500
6
12
60
50
10
-65 to +175
RURP660CC
600
600
600
6
12
60
50
10
-65 to +175
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= +155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
©2001 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. A
Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications
(per leg)
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
RURP640CC
SYMBOL
V
F
TEST CONDITION
I
F
= 6A, T
C
= +25
o
C
I
F
= 6A, T
C
= +150
o
C
I
R
V
R
= 400V, T
C
= +25
o
C
V
R
= 500V, T
C
= +25
o
C
V
R
= 600V, T
C
= +25
o
C
I
R
V
R
= 400V, T
C
= +150
o
C
V
R
= 500V, T
C
= +150
o
C
V
R
= 600V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 200A/
µ
s
I
F
= 6A, dI
F
/dt = 200A/
µ
s
t
A
t
B
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
Q
4
0.25 I
RM
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
I
RM
V
R
L
LOOP
DUT
0
RURP650CC
MAX
1.5
1.2
100
-
-
500
-
-
55
60
-
-
-
-
3
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
28
16
150
25
-
MAX
1.5
1.2
-
100
-
-
500
-
55
60
-
-
-
-
3
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RURP660CC
TYP
-
-
-
-
-
-
-
-
-
-
28
16
150
25
-
MAX
1.5
1.2
-
-
100
-
-
500
55
60
-
-
-
-
3
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
ns
ns
ns
ns
nC
pF
o
C/W
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
28
16
150
25
-
I
F
= 6A, dI
F
/dt = 200A/
µ
s
I
F
= 6A, dI
F
/dt = 200A/
µ
s
I
F
= 6A, dI
F
/dt = 200A/
µ
s
V
R
= 10V, I
F
= 0A
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
t
A(MIN)
L
1
≤
R
4
10
I
F
dI
F
dt
t
A
t
RR
t
B
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. A
RURP640CC, RURP650CC, RURP660CC
Typical Performance Curves
30
I
R
, REVERSE CURRENT (µA)
500
100
I
F
, FORWARD CURRENT (A)
10
+175
o
C
10
+100
o
C
1
+100
o
C
+175 C
1
o
0.1
+25
o
C
0.01
+25 C
o
0.5
0.001
0
0.5
1
1.5
2
2.5
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
T
C
= +25
o
C, dI
F
/dt = 200A/µs
50
90
75
t, RECOVERY TIMES (ns)
T
C
= +100
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
40
t
RR
60
45
30
30
t
RR
20
t
A
t
A
t
B
10
t
B
15
0
0.5
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
1
I
F
, FORWARD CURRENT (A)
6
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
©2001 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. A
RURP640CC, RURP650CC, RURP660CC
Typical Performance Curves
(Continued)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
C
= +175
o
C, dI
F
/dt = 200A/µs
6
5
DC
4
SQ. WAVE
3
2
100
t, RECOVERY TIMES (ns)
80
t
RR
60
40
t
A
t
B
20
1
0
145
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
75
C
J
, JUNCTION CAPACITANCE (pF)
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
60
45
30
15
0
0
50
100
V
R
, REVERSE VOLTAGE (V)
150
200
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. A
Test Circuit and Waveforms
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI
2
[VAVL/(VAVL - V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
V
DD
I
L
I V
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
©2001 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. A
微控制器 MCU
