LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Applictions
Low current rectification and high speed switching
Features
Extremelysmall surface mounting type. (SC-79/SOD523)
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA
Low Reverse Current
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
LRB521S-30T1G
S-LRB521S-30T1G
1
2
SOD523/SC-79
Construction
Silicon epitaxial planar
1
Cathode
2
Anode
We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB521S-30T1G
S-LRB521S-30T1G
LRB521S-30T3G
S-LRB521S-30T3G
Marking
5M
5M
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
(T
A
= 25
°
C)
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current*
Junction temperature
Storage temperature
*60Hz for 1cycle.
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Limits
30
200
1
125
-40~+125
Unit
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS(T
A
= 25
°C
)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ
-
-
Max.
0.50
30
Unit
V
µΑ
Conditions
I
F
=200mA
V
R
=10V
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
Electrical characteristic curves(Ta=25
o
C)
REVERSE CURRENT : I R (mA)
LRB521S-30T1G , S-LRB521S-30T1G
100
f=1MHz
1
1
FORWARD CURRENT : I F (A)
0.1
0
.
1
01
.
0
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
0
10
0.01
00
.1
0
0 01
.0
0
0.001
0
100
200
300
400
500
600
0 00
. 01
0
0
5
1
0
1
5
2
0
2
5
3
0
3
5
4
0
4
5
FORWARD VOLTAGE:VF(mV)
-25℃
25℃
75℃
100℃
125℃
-25℃
REVERSE VOLTAGE:V R(V)
25℃
75℃
100℃
125℃
1
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
CAPACITANCE BETWEEN TERMINALS : CT(pF)
50
Ta=25
o
C
f=1MHz
100
80
60
40
20
0
0
20
19
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
18
17
16
15
14
13
12
11
10
AVE:14.33pF
20
10
5
2
1
0
Io CURRENT (%)
Ta=25℃
f=1MHz
VR=0V
n=10pcs
2
4
6
8
10
12
14
25
50
75
100
125
REVERSE VOLTAGE : VR(V)
AMBIENT TEMPERATURE : Ta(oC)
Fig. 3 Capacitance between
terminals characteristics
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
8.3ms
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
10
Ifsm
8.3ms 8.3ms
1cyc
Ct DISPERSION MAP
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
t
15
10
5
5
5
AVE:5.60A
0
0
1
IFSM DISPERSION MAP
0
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
0.2
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
REVERSE POWER
DISSIPATIONP
R
(w)
0.5
0.4
D=1/2
DC
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=20mA
0.15
0.3
0.2
0.1
0
DC
Sin(θ＝180)
D=1/2
0.1
Sin(θ＝180)
1ms
time
0.05
300us
10
0.001
0.1
10
1000
0
0
0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-P½ CHARACTERISTICS
0.5
TIME:(s)
Rth-t CHARACTERISTICS
0
10
20
REVERSE VOLTAGE：VR(V)
VR-P
R
CHARACTERISTICS
30
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LRB521S-30T1G , S-LRB521S-30T1G
SC-79/SOD-523
NOTES:
−X−
D
−Y−
E
2X
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
0.48
2X
1.80
0.40
2X
PACKAGE
OUTLINE
DIMENSION: MILLIMETERS
Rev.O 3/3
微控制器 MCU
