PHOTODIODE
Si photodiode
S1226 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
Applications
l
High UV sensitivity: QE 75 % (λ=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
High reliability
l
Analytical equipment
l
Optical measurement equipment, etc.
s
General ratings / absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
➀/Q
➀/K
➁/Q
➁/K
➁/Q
➁/K
➂/Q
➂/K
Package
(mm)
TO-18
Active
area size
(mm)
1.1 × 1.1
2.4 × 2.4
TO-5
3.6 × 3.6
TO-8
5.8 × 5.8
13
33
Effective
active area
(mm
2
)
1.2
5.7
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
5
-20 to +60
-55 to +80
-40 to +100
-55 to +125
-20 to +60
-55 to +80
-40 to +100
-55 to +125
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral sensi-
response tivity
range wave-
length
λ
λp
Photo sensitivity
S
(A/W)
λp
200 nm
Short circuit
Dark
current
current
Isc
I
D
100
lx
V =10 m V
R
He-Ne
Min. Typ. Max.
laser
(µA) (µA)
0.5
2.2
4.4
12
0.66
2.9
5.9
16
(pA)
2
5
1.12
10
20
1
2
380
950
1
10 3.6 × 10
-15
Terminal
Temp.
Rise time capaci- Shunt
coeffi-
tr
tance resistance
cient
NEP
V
R
=0 V
Ct
Rsh
of I
D
R
L
=1 kΩ V
R
=0 V V
R
=10 mV
T
CID
f=10 kHz
Min. Typ.
(times/° C) (µs)
(pF) (GΩ) (GΩ) (W/Hz
1/2
)
0.15
0.5
35
160
5
2
50 1.6 × 10
-15
20 2.5 × 10
-15
Type No.
Min. Typ. 633 nm
(nm)
(nm)
190 to 1000
S1226-18BQ
0.10 0.12
320 to 1000
S1226-18BK
-
-
190 to 1000
S1226-5BQ
0.10 0.12
320 to 1000
S1226-5BK
-
-
720 0.36
0.34
190 to 1000
S1226-44BQ
0.10 0.12
320 to 1000
S1226-44BK
-
-
190 to 1000
S1226-8BQ
0.10 0.12
320 to 1000
S1226-8BK
-
-
* Window material, K: borosilicate glass, Q: quartz glass
0.5 5 5.0 × 10
-15
Si photodiode
s
Spectral response
(Typ. Ta =25 ˚C)
S1226 series
s
Photo sensitivity temperature characteristic
(Typ. )
0.7
0.6
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
0.5
0.4
+1.0
+0.5
0.3
0.2
S1226-BQ
0
0.1
S1226-BK
0
190
400
600
800
1000
-0.5
190
400
600
800
1000
WAVELENGTH (nm)
KSPDB0106EA
WAVELENGTH (nm)
KSPDB0030EA
s
Rise time vs. load resistance
(Typ. Ta=25 ˚C, V
R
=0
V)
s
Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
10 nA
1 ms
100
µs
S1226-8BQ/BK
1 nA
DARK CURRENT
S1226-44BQ/BK
S1226-8BQ/BK
100 pA
RISE TIME
10
µs
1
µs
S1226-18BQ/BK
100 ns
S1226-5BQ/BK
10 ns
10
2
10
3
10
4
10
5
10 pA
S1226-5BQ/BK, -18BQ/BK
1 pA
S1226-44BQ/BK
100 fA
0.01
0.1
1
10
LOAD RESISTANCE (Ω)
KSPDB0107EA
REVERSE VOLTAGE (V)
KSPDB0108EA
Si photodiode
s
Shunt resistance vs. ambient temperature
(Typ. V
R
=10
mV)
S1226 series
1 TΩ
100 GΩ
S1226-18BQ/BK, -5BQ/BK
SHUNT RESISTANCE
10 GΩ
1 GΩ
S1226-44BQ/BK
100 MΩ
10 MΩ
1 MΩ
100 kΩ
10 kΩ
-20
S1226-8BQ/BK
0
20
40
60
80
AMBIENT TEMPERATURE (˚C)
KSPDB0109EA
Si photodiode
s
Dimensional outlines (unit: mm)
➀
S1226-18BQ/-18BK
5.4 ± 0.2
WINDOW
3.0 ± 0.2
S1226 series
➁
S1226-5BQ/K, S1226-44BQ/K
9.1 ± 0.2
WINDOW
5.9 ± 0.1
3.6 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.4
2.9
5.08 ± 0.2
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
KSPDA0114EA
2.54 ± 0.2
14
CONNECTED TO CASE
CONNECTED TO CASE
KSPDA0113EB
➂
S1226-8BQ/-8BK
13.9 ± 0.2
WINDOW
10.5 ± 0.1
12.35 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
1.9
7.5 ± 0.2
MARK ( 1.4)
CONNECTED TO CASE
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
KSPDA0115EA
15
5.0 ± 0.2
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
20
4.1 ± 0.2
4.7 ± 0.1
8.1 ± 0.1
Cat. No. KSPD1034E03
Oct.
2002 DN
