MPPC
®
(Multi-Pixel Photon Counter)
S13360 series
MPPCs for precision measurement
MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of
multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting ca-
pability and low operating voltage and is immune to the effects of magnetic
fi
elds.
The S13360 series are MPPCs for precision measurement. The MPPCs inherits the superb low afterpulse characteristics of
previous products and further provide lower crosstalk and lower dark count. They are suitable for precision measurement, such
as
fl
ow cytometry, DNA sequencer, laser microscope, and
fl
uorescence measurement, that requires low noise characteristics.
Features
Reduced crosstalk and dark count
(compared to previous products)
Outstanding photon counting capability (outstanding photon
detection efficiency versus numbers of incident photons)
Compact
Operates at room temperature
Low voltage (V
BR
=53 V typ.) operation
High gain: 10
5
to 10
6
Excellent time resolution
Immune to the effects of magnetic fields
Operates with simple readout circuit
MPPC module also available (sold separately)
Applications
Fluorescence measurement
Laser microscopes
Flow cytometry
DNA sequencers
Environmental analysis
Various academic research
Lower noise
When an MPPC detects photons, the output may contain spurious pulses, namely afterpulse and crosstalk, that are separate from the out-
put pulses of the incident photons. Afterpulses are output later than the timing at which the incident light is received. Crosstalk is output
from other pixels at the same time as the detection of light.
Previous products achieved lower afterpulse through the improvement of material and wafer process technology, but with the S13360 se-
ries, low crosstalk has been achieved in addition to low afterpulse.
Pulse waveform comparison (typical example)
Previous product
(M=1.25 × 10
6
)
Improved product (reference data: S13360-3050CS series)
(M=1.25 × 10
6
)
50 mV
10 ns
50 mV
10 ns
www.hamamatsu.com
1
MPPC (Multi-Pixel Photon Counter)
S13360 series
Selection guide
Type no.
S13360-1325CS
S13360-1325PE
S13360-3025CS
S13360-3025PE
S13360-6025CS
S13360-6025PE
S13360-1350CS
S13360-1350PE
S13360-3050CS
S13360-3050PE
S13360-6050CS
S13360-6050PE
S13360-1375CS
S13360-1375PE
S13360-3075CS
S13360-3075PE
S13360-6075CS
S13360-6075PE
75
50
25
Pixel pitch
(μm)
Effective photosensitive
area
(mm)
1.3 × 1.3
3.0 × 3.0
6.0 × 6.0
1.3 × 1.3
3.0 × 3.0
6.0 × 6.0
1.3 × 1.3
3.0 × 3.0
6.0 × 6.0
Number of pixels
2668
14400
57600
667
3600
14400
285
1600
6400
Package
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
82
74
47
Fill factor
(%)
Structure / Absolute maximum ratings
Type no.
(package)
S13360-
****
CS
(ceramic)
S13360-
****
PE
(surface mount type)
Refractive
index of
window
material
1.41
-20 to +60
Epoxy resin
1.55
-20 to +80
Absolute maximum ratings
Operating
Storage
temperature*
1
temperature*
1
Topr
Tstg
(°C)
(°C)
Soldering conditions
350 °C or less, once,
within 3 seconds*
3
-
Reflow soldering
conditions*
2
Tsol
-
Peak temperature: 240 °C,
twice (see P.11)
Window material
Silicone resin
*1:
No condensation
*2:
JEDEC level 5a
*3:
Separate by at least 1 mm from the lead root.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
2
MPPC (Multi-Pixel Photon Counter)
S13360 series
Electrical and optical characteristics (Typ. Ta=25
°C, unless otherwise noted)
Dark count*
5
Photon
Spectral
Peak
detection
Measure- response sensitivity
efficiency
range wavelength
ment
PDE*
4
λp
λ
conditions
λ=λp
(nm)
270 to 900
320 to 900
Vover
=5 V
270 to 900
320 to 900
270 to 900
320 to 900
270 to 900
320 to 900
Vover
=3 V
270 to 900
320 to 900
270 to 900
320 to 900
270 to 900
320 to 900
Vover
=3 V
270 to 900
320 to 900
270 to 900
320 to 900
50
450
40
25
(nm)
(%)
Terminal
capaci-
tance
Ct
(pF)
60
320
1280
60
320
1280
60
320
1280
4.0 × 10
6
7
V
BR
+ 3
1.7 × 10
6
53 ± 5
3
V
BR
+ 3
54
7.0 × 10
5
1
V
BR
+ 5
Break-
down
voltage
V
BR
(V)
Tem-
perature
Recom-
coefficient
mended
Crosstalk
at recom-
operating
probability
mended
voltage
operating
Vop
voltage
Δ
TVop
(%)
(V)
(mV/°C)
Type no.
Typ.
Max.
Gain
M
(kcps)
70
400
1600
90
500
2000
90
500
2000
(kcps)
210
1200
5000
270
1500
6000
270
1500
6000
S13360-1325CS
S13360-1325PE
S13360-3025CS
S13360-3025PE
S13360-6025CS
S13360-6025PE
S13360-1350CS
S13360-1350PE
S13360-3050CS
S13360-3050PE
S13360-6050CS
S13360-6050PE
S13360-1375CS
S13360-1375PE
S13360-3075CS
S13360-3075PE
S13360-6075CS
S13360-6075PE
*4:
Photon detection efficiency does not include crosstalk or afterpulses.
*5:
Threshold=0.5 p.e.
Note: The above characteristics were measured at the operating voltage that yields the listed gain. (See the data attached to each product.)
Connection example
+V
1 kΩ
0.1 μF
MPPC
Signal
Amplifier
KAPDC0024EB
3
MPPC (Multi-Pixel Photon Counter)
S13360 series
Photon detection efficiency vs. wavelength (typical example)
Pixel pitch: 25
μm
50
(Typ. Ta=25 °C)
S13360-**25PE
S13360-**25CS
50
Pixel pitch: 50
μm
(Typ. Ta=25 °C)
S13360-**50PE
S13360-**50CS
Photon detection efficiency (%)
Photon detection efficiency (%)
40
40
30
30
20
20
10
10
0
200
300
400
500
600
700
800
900
1000
0
200
300
400
500
600
700
800
900
1000
Wavelength (nm)
KAPDB0321EA
Wavelength (nm)
KAPDB0322EA
Pixel pitch: 75
μm
50
(Typ. Ta=25 ˚C)
S13360-**75PE
S13360-**75CS
Photon detection efficiency (%)
40
30
20
10
0
200
300
400
500
600
700
800
900
1000
Wavelength (nm)
KAPDB0325EA
Photon detection efficiency does not include crosstalk or afterpulses.
4
MPPC (Multi-Pixel Photon Counter)
S13360 series
Overvoltage specifications of gain, crosstalk probability, photon detection efficiency (typical example)
Pixel pitch: 25
μm
1.6 × 10
6
Gain
Crosstalk probability
Photon detection efficiency (λ=450 nm)
1.2 × 10
6
30
(Ta=25 °C)
40
8.0 × 10
5
20
4.0 × 10
5
10
0
0
2
4
6
8
0
10
Overvoltage (V)
KAPDB0323EA
Pixel pitch: 50
μm
6 × 10
6
Gain
Crosstalk probability
Photon detection
efficiency (λ=450 nm)
(Ta=25 °C)
60
5 × 10
6
50
4 × 10
6
40
3 × 10
6
30
2 × 10
6
20
1 × 10
6
10
0
0
2
4
6
8
0
10
Overvoltage (V)
KAPDB0324EA
Crosstalk probability, photon detection efficiency (%)
Gain
Crosstalk probability, photon detection efficiency (%)
Gain
5
