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S1BLHRU

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
参考标准
AEC-Q101
最大重复峰值反向电压
100 V
最大反向恢复时间
1.8 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
30
文档预览
S1AL thru S1ML
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low-Profile Package
- Low power loss, high efficiency
- Moisture sensitivity: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Rectifier
MECHANICAL DATA
Case:Sub
SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:Indicated
by cathode band
Weight:0.019
gram (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.0A
Maximum reverse current @ rated VR TJ=25
TJ=125
Typical junction capacitance (Note 2)
Typical reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θJL
R
θJA
T
J
T
STG
25
85
- 55 to + 175
- 55 to + 175
SYMBOL
S1AL S1BL S1DL S1GL S1JL S1KL S1ML
1AL
50
35
50
1BL
100
70
100
1DL
200
140
200
1GL
400
280
400
1
30
1.1
5
50
9
1.8
30
85
O
UNIT
1JL
600
420
600
1KL
800
560
800
1ML
1000
700
1000
V
V
V
A
A
V
μA
pF
uS
C/W
O
O
C
C
Document Number:DS_D1309028
Version:L13
S1AL thru S1ML
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
RU
RV
RT
MT
RQ
MQ
R3
RF
R2
M2
RH
MH
Note 1: "x" defines voltage from 50V (S1AL) to 1000V (S1ML)
PACKING CODE
GREEN COMPOUND
CODE
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
1800 / 7" Plastic reel (8mm tape)
3000 / 7" Plastic reel (8mm tape)
7500 / 13" Paper reel (8mm tape)
7500 / 13" Plastic reel (8mm tape)
10000 / 13" Paper reel (8mm tape)
10000 / 13" Plastic reel (8mm tape)
1800 / 7" Plastic reel (12mm tape)
3000 / 7" Plastic reel (12mm tape)
7500 / 13" Paper reel (12mm tape)
7500 / 13" Plastic reel (12mm tape)
10000 / 13" Paper reel (12mm tape)
10000 / 13" Plastic reel (12mm tape)
PACKAGE
PACKING
S1XL
(Note 1)
Prefix "H"
Suffix "G"
EXAMPLE
PREFERRED P/N
S1ML RU
S1ML RUG
S1MLHRU
PART NO.
S1ML
S1ML
S1ML
H
AEC-Q101
QUALIFIED
PACKING CODE
RU
RU
RU
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
INSTANTANEOUS REVERSE CURRENT
(uA)
1.2
AVERAGE FORWARD CURRENT (A)
100
10
1
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (
o
C)
TJ=125℃
TJ=75℃
0.1
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT
(A)
PEAK FORWARD SURGE CURRENT
(A)
100
100
FIG. 4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
10
1
8.3mS Single
Half Sine Wave.
1
1
10
100
0.1
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FORWARD VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Document Number:DS_D1309028
Version:L13
S1AL thru S1ML
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
10
1
0.01
0.1
1
REVERSE VOLTAGE (V)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit(mm)
Min
1.70
2.70
0.16
1.23
0.80
3.40
2.45
0.35
0.00
Max
1.90
2.90
0.30
1.43
1.20
3.80
2.60
0.85
0.10
Unit(inch)
Min
0.067
0.106
0.006
0.048
0.031
0.134
0.096
0.014
0.000
Max
0.075
0.114
0.012
0.056
0.047
0.150
0.102
0.033
0.004
DIM.
B
C
D
E
F
G
H
I
J
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit(mm)
1.4
1.2
3.1
1.9
4.3
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number:DS_D1309028
Version:L13
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