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S1D

Rectifiers 1A 200V

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
GREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
湿度敏感等级
1
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
200 V
最大反向恢复时间
1.5 µs
表面贴装
YES
端子面层
Pure Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
S1A - S1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Non-repetitive peak reverse avalanche
energy at 25°C, I
AS
=1A, L=10mH
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
E
RSM
R
θJL
R
θJA
T
J
T
STG
27
75
- 55 to +175
- 55 to +175
40
1.1
1
50
1.5
12
5
30
85
S1A
50
35
50
S1B
100
70
100
S1D
200
140
200
S1G
400
280
400
1
30
S1J
600
420
600
S1K S1M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
mJ
°C/W
°C
°C
Document Number: DS_D1411068
Version: R15
S1A - S1M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
R3
R2
M2
S1x
(Note 1)
H
F3
F2
F4
E3
E2
Note 1: "x" defines voltage from 50V (S1A) to 1000V (S1M)
G
PACKING CODE
PACKING CODE
SUFFIX
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
EXAMPLE
PREFERRED
PART NO.
S1MHR3G
PART NO.
S1M
PART NO.
SUFFIX
H
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
(
°
C)
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS REVERSE CURRENT
(μA)
AVERAGE FORWARD CURRENT (A)
100
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
T
J
=125°C
1
0.1
T
J
=75°C
T
J
=25°C
0.01
150
175
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
LEAD TEMPERATURE
PEAK FORWARD SURGE URRENT(A)
8.3ms Single Half Sine Wave
INSTANTANEOUS FORWARD CURRENT
(A)
100
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
10
S1A-S1K
10
S1M
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
2
1
1
10
NUMBER OF CYCLES AT 60 Hz
100
Document Number: DS_D1411068
Version: R15
S1A - S1M
Taiwan Semiconductor
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
CAPACITANCE (pF)
10
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
REVERSE VOLTAGE (V)
10
100
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1411068
Version: R15
S1A - S1M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411068
Version: R15
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