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S1K

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

器件类别:半导体    分立半导体   

厂商名称:上海商朗电子

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CE
CHENYI ELECTRONICS
S1A THRU S1M
SURFACE MOUNT GALSS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0Ampere
FEATURES
. For surface mounted applications
. Glass passivated junction
. Low profile package
. Built-in strain relief , ideal for automated placement
. Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
. High temperature soldering guaranteed: 250 /10 seconds, at terminals
MECHANICAL DATA
.
Case:
JEDEC SMA(DO-214AC) molded plastic
.
Terminals:
Plated axial leads,solderable per MIL-STD-750,method 2026
.
Polarity:
Color band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.002 ounce, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate current by 20%)
Symbols
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current (See fig.1)
Peak forward surge current (8.3ms
half sing wave superimposed on rated load
(JEDEC method)
T
L
=110
Maximum instantaneous forward voltage at 1.0 A
Maximum reverse recovery time(Note 1)
current at rated DC Blocking Voltage
Typical Thermal Resistance( Note 1)
Typical reverse recovery time(Note 2)
Operating and storage temperature range
T
A
=25
T
A
=125
R
R
JL
JA
S1A
50
35
50
S1B
100
70
100
S1D
200
140
200
S1G
400
280
400
1.0
S1J
600
420
600
S1K
800
560
800
S1M
1000
700
1000
Units
Volts
Volts
Volts
Amp
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
40.0
30.0
Amps
V
F
I
R
1.0
1.1
5.0
Volts
A
50
27.0
25.0
1.8
-65 to +150
30.0
/W
85.0
S
Trr
T
J
T
STG
Notes:
1.Thermal resistance from junction to ambient and from junction to lead mounted on 0.2 X 0.2"(5.0 X 5.0mm)
copper pad areas.
2.Test conditions:IF=0.5A,IR=1.0A,Irr=0.25A.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE
CHENYI ELECTRONICS
S1A THRU S1M
SURFACE MOUNT GALSS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0Ampere
RATINGS AND CHARACTERISTIC CURVES S1A THRU S1M
FLG.1-FORWARD CURRENT
DERATING CURVE
FIG.2-TYPICAL REVERSE CHARACTERISTICS
FIG.3-MAXIMUM NON-REPETITIVE
FIG.4-TYPICAL REVERSE CHARACTERISTICS
FORWARD SURGE CURRENT
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 2
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参数对比
与S1K相近的元器件有:S1M、S1J、S1G、S1D、S1B、S1A。描述及对比如下:
型号 S1K S1M S1J S1G S1D S1B S1A
描述 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
端子数量 - 2 2 2 - 2 2
元件数量 - 1 1 1 - 1 1
加工封装描述 - 塑料, SMA, 2 PIN 绿色, 塑料, SMA, 2 PIN - - 绿色, 塑料, SMA, 2 PIN ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
无铅 - Yes Yes - - Yes Yes
欧盟RoHS规范 - Yes Yes - - Yes Yes
状态 - DISCONTINUED ACTIVE DISCONTINUED ACTIVE ACTIVE ACTIVE
包装形状 - 矩形的 矩形的 矩形的 - 矩形的 RECTANGULAR
包装尺寸 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
表面贴装 - Yes Yes Yes - Yes Yes
端子形式 - C BEND C BEND C BEND - C BEND C BEND
端子涂层 - 锡/银 PURE 锡 - - PURE 锡 NOT SPECIFIED
端子位置 - - DUAL
包装材料 - 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 - 塑料/环氧树脂 PLASTIC/EPOXY
结构 - 单一的 单一的 单一的 - 单一的 SINGLE
二极管元件材料 - - SILICON
二极管类型 - 信号二极管 信号二极管 信号二极管 SIGNAL DIODE 信号二极管 SIGNAL DIODE
最大重复峰值反向电压 - 1000 V 600 V 400 V - 100 V 50 V
最大平均正向电流 - 1 A 1 A 1 A - 1 A 1 A
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