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S1MBHR4G

Rectifiers 1A, 1000V, Glass Passivated SMB Rectifier

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
SMB, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
1000 V
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
S1AB - S1MB
Taiwan Semiconductor
1A, 50V - 1000V Surface Mount Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Low forward voltage drop
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
1
50 - 1000
30
150
Single Die
UNIT
A
V
A
°C
DO-214AA (SMB)
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
SYMBOL
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
S1AB S1BB S1DB S1GB S1JB S1KB S1MB UNIT
S1AB S1BB S1DB S1GB S1JB S1KB S1MB
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
V
1
A
30
- 55 to +150
- 55 to +150
A
°C
°C
1
Version:H1701
S1AB - S1MB
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
SYMBOL
R
ӨJL
LIMIT
30
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 1A,T
J
= 25°C
(2)
SYMBOL
V
F
I
R
C
J
TYP
-
-
-
12
MAX
1.1
5
50
-
UNIT
V
µA
µA
pF
Reverse current @ rated V
R
per diode
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
S1xB
(Note 1)
H
R4
M4
Note:
1. "x" defines voltage from 50V (S1AB) to 1000V (S1MB)
: Optional available
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N
S1ABHR5G
PART NO.
S1AB
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:H1701
S1AB - S1MB
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
1.2
AVERAGE FORWARD CURRENT (A)
100
Fig2. Typical Junction Capacitance
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
CAPACITANCE (pF)
10
Resistive or
inductive load
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
10
REVERSE VOLTAGE (V)
100
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
10
100
10
Fig4. Typical Forward Characteristics
1
T
J
=125°C
1
10
0.1
UF1DLW
T
J
=125°C
T
J
=75°C
0.01
1
0.01
Pulse width
Pulse width=300μs
1% duty cycle
0.8
0.9
1
1.1
1.4
1.6
1.8
2
T
J
=25°C
0.001
0.1
0.3
0.4
0.4
0.6
0.5
0.8
0.6
1
0.7
1.2
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1.2
FORWARD VOLTAGE (V)
3
Version:H1701
(A)
0.1
T
J
=25°C
S1AB - S1MB
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
100
8.3ms single half sine wave
PEAK FORWARD SURGE URRENT (A)
10
1
1
10
NUMBER OF CYCLES AT 60 Hz
100
4
Version:H1701
S1AB - S1MB
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.95
4.05
3.30
1.95
0.75
5.10
0.05
0.15
Max
2.20
4.60
3.95
2.65
1.60
5.60
0.20
0.31
Unit (inch)
Min
0.077
0.159
0.130
0.077
0.030
0.201
0.002
0.006
Max
0.087
0.181
0.156
0.104
0.063
0.220
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
5
Version:H1701
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