– Program Suspend & Resume: read other sectors before
programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
–
–
–
–
90 ns access time
4-word/8-byte page read buffer
25 ns page read times
16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Hardware features
– Sector Group Protection: hardware-level method of preventing write
operations within a sector group
– Temporary Sector Unprotect: V
ID
-level method of charging code in
locked sectors
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
Publication Number
S29GL-A_00
Revision
A
Amendment
12
Issue Date
May 21, 2008
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
D at a
S hee t
General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm
MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes.
The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a
16-Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the
devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also
function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the
host system or in standard EPROM programmers.
Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage
range (V
CC
) as specified in the
Product Selector Guide
on page 9
and the
Ordering Information
on page 19.
Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
Each device requires only a
single 3.0-Volt power supply
for both read and write functions. In addition to a
V
CC
input, a high-voltage
accelerated program (ACC)
feature provides shorter programming times through
increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during
system production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Commands are written to the device using standard microprocessor write timing. Write cycles also internally
latch addresses and data needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Device programming and erasure are initiated through command sequences. Once a program or erase
operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or
monitor the
Ready/Busy# (RY/BY#)
output to determine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase operation in a given
sector to read or program any other sector and then complete the erase operation. The
Program Suspend/
Program Resume
feature enables the host system to pause a program operation in a given sector to read
any other sector and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels on CE#
and RESET#, or when addresses are stable for a specified period of time.
The
Write Protect (WP#)
feature protects the first or last sector by asserting a logic low on the WP#/ACC pin
or WP# pin, depending on model number. The protected sector is still protected even during accelerated
programming.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can be permanently
protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
