S29GLxxxM MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
DATASHEET
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 um MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector models): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sectors
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64
Kbyte) sectors of 64 32Kword sectors
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
100 ns access time (256Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Publication Number
S29GLxxxM
Revision
B
Amendment
3
Issue Date
Octorber 18, 2004
D a t a s h e e t
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23
um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The
S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, or-
ganized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or
4,194,304 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data
bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The
devices can be programmed either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M) are available. Note
that each access time has a specific operating voltage range (V
CC
) as specified in the
Product Selector Guide
and
the
Ordering Information
sections. Package offerings include 40-pin TSOP, 48-pin TSOP, 56-pin TSOP, 48-ball fine-
pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device has sepa-
rate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and write functions. In addition to a V
CC
input, a high-voltage
accelerated program (ACC)
feature provides shorter programming times through in-
creased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the device using standard microprocessor write timing. Write cycles also internally latch
addresses and data needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Device programming and erasure are initiated through command sequences. Once a program or erase operation
starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy# (RY/BY#)
output to determine whether the operation is complete. To facilitate programming, an
Unlock Bypass
mode reduces command sequence overhead by requiring only two write cycles to program data
instead of four.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations dur-
ing power transitions. The hardware sector protection feature disables both program and erase operations in any
combination of sectors of memory. This can be achieved in-system or via programming equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase operation in a given sector
to read or program any other sector and then complete the erase operation. The
Program Suspend/Program
Resume
feature enables the host system to pause a program operation in a given sector to read any other sector
and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus
also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels on CE# and
RESET#, or when addresses are stable for a specified period of time.
The
Write Protect (WP#)
feature protects the first or last sector by asserting a logic low on the WP#/ACC pin
or WP# pin, depending on model number. The protected sector is still protected even during accelerated
programming.
The
SecSi™ (Secured Silicon) Sector
provides a 128-word/256-byte area for code or data that can be perma-
nently protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector
simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
2
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .5
S29GL256M .............................................................................................................5
S29GL128M ..............................................................................................................5
S29GL064M .............................................................................................................5
S29GL032M .............................................................................................................5
Table 17. S29GL256M Sector Address Table ..........................68
Autoselect Mode ................................................................................................ 79
Table 18. Autoselect Codes, (High Voltage Method) ...............80
Sector Group Protection and Unprotection .............................................. 81
Table 19. S29GL032M (Model R0) Sector Group Protection/Unpro-
tection Address Table .........................................................81
Table 20. S29GL032M (Models R1, R2) Sector Group Protection/Un-
protection Address Table .....................................................81
Table 21. S29GL032M (Models R3, R5) Sector Group Protection/Un-
protection Address Table .....................................................82
Table 22. S29GL032M (Models R4, R6) Sector Group Protection/Un-
protection Address Table .....................................................83
Table 23. S29GL064M (Model 00) Sector Group Protection/Unpro-
tection Address Table ........................................................84
Table 24. S29GL064M (Models R1, R2, R8, R9) Sector Group Protec-
tion/Unprotection Address Table ..........................................85
Table 25. S29GL064M (Model R3) Sector Group Protection/Uprotec-
tion Address Table .............................................................86
Table 26. S29GL064M (Model R4) Sector Group Protection/Unpro-
tection Address Table .........................................................87
Table 27. S29GL064M (Model R5) Sector Group Protection/Unpro-
tection Address Table ........................................................88
Table 28. S29GL064M (Models R6, R7) Sector Group Protection/Un-
protection Address Table ....................................................89
Table 29. S29GL128M Sector Group Protection/Unprotection
Address Table ....................................................................90
Table 30. S29GL256M Sector Group Protection/Unprotection
Address Table ....................................................................92
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .7
For S29GL064M (model R0) only. ...................................................................9
For S29GL064M (model R0) only. ..................................................................13
Logic Symbol-S29GL032M (Model R0) ..........................................................17
Logic Symbol-S29GL032M (Models R1, R2) ..................................................17
Logic Symbol-S29GL032M (Models R3, R4, R5, R6) ..................................17
Logic Symbol-S29GL064M (Models R0) ....................................................... 18
Logic Symbol-S29GL064M (Models R1, R2, R8, R9) ................................. 18
Logic Symbol-S29GL064M (Models R3, R4) ............................................... 18
Logic Symbol-S29GL064M (Model R5) ......................................................... 19
Logic Symbol-S29GL064M (Model R6, R7) ................................................. 19
Logic Symbol-S29GL128M ................................................................................. 19
Logic Symbol-S29GL256M ............................................................................... 20
Ordering Information-S29GL032M . . . . . . . . . . . . 21
S29GL032M Standard Products ...................................................................... 21
Table 1. S29GL032M Ordering Options ................................. 22
Ordering Information-S29GL064M . . . . . . . . . . . . 23
S29GL064M Standard Products ......................................................................23
Table 2. S29GL064M Ordering Options ................................. 24
Ordering Information-S29GL128M . . . . . . . . . . . . 25
S29GL128M Standard Products .......................................................................25
Table 3. S29GL128M Ordering Options ................................. 26
Temporary Sector Group Unprotect .......................................................... 95
Figure 1. Temporary Sector Group Unprotect Operation .......... 95
Figure 2. In-System Sector Group Protect/Unprotect Algorithms 96
Ordering Information-S29GL256M . . . . . . . . . . . . 27
S29GL256M Standard Products ......................................................................27
Table 4. S29GL256M Ordering Options ................................. 28
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .29
Table 5. Device Bus Operations ........................................... 29
Word/Byte Configuration ................................................................................30
Requirements for Reading Array Data ........................................................ 30
Page Mode Read ............................................................................................. 30
Writing Commands/Command Sequences ................................................ 30
Write Buffer .................................................................................................... 30
Accelerated Program Operation ................................................................31
Autoselect Functions ......................................................................................31
Standby Mode ........................................................................................................31
Automatic Sleep Mode .......................................................................................31
RESET#: Hardware Reset Pin ..........................................................................31
Output Disable Mode ........................................................................................32
Table 6. S29GL032M (Model R0) Sector Address Table ........... 32
Table 7. S29GL032M (Models R1, R2) Sector Address Table .... 34
Table 8. S29GL032M (Models R3, R5) Top Boot Sector Architecture
36
Table 9. S29GL032M (Models R4, R6) Bottom Boot Sector Architec-
ture ................................................................................. 38
Table 10. S29GL064M (Model R0) Sector Address Table ......... 40
Table 11. S29GL064M (Models R1, R2, R8, R9) Sector Address Table
44
Table 12. S29GL064M (Model R3) Top Boot Sector Architecture 48
Table 13. S29GL064M (Model R4) Bottom Boot Sector Architecture
52
Table 14. S29GL064M (Model R5) Sector Address Table ......... 56
Table 15. S29GL064M (Model R6, R7) Sector Address Table .... 59
Table 16. S29GL128M Sector Address Table ......................... 62
SecSi (Secured Silicon) Sector Flash Memory Region ............................. 97
Write Protect (WP#) .......................................................................................98
Hardware Data Protection .............................................................................98
Low VCC Write Inhibit ...............................................................................98
Write Pulse “Glitch” Protection ...............................................................98
Logical Inhibit ...................................................................................................98
Power-Up Write Inhibit ...............................................................................98
Common Flash Memory Interface (CFI) . . . . . . . 99
Table 32. System Interface String ...................................... 100
Command Definitions . . . . . . . . . . . . . . . . . . . . . .103
Reading Array Data ..........................................................................................103
Reset Command ................................................................................................103
Autoselect Command Sequence ..................................................................104
Enter SecSi Sector/Exit SecSi Sector Command Sequence ..................104
Word Program Command Sequence .....................................................104
Unlock Bypass Command Sequence .......................................................105
Write Buffer Programming ........................................................................105
Accelerated Program ...................................................................................106
Figure 3. Write Buffer Programming Operation..................... 107
Figure 4. Program Operation ............................................. 108
Program Suspend/Program Resume Command Sequence .................. 108
Figure 5. Program Suspend/Program Resume ...................... 109
Chip Erase Command Sequence ..................................................................109
Sector Erase Command Sequence ................................................................110
Figure 6. Erase Operation ................................................. 111
Erase Suspend/Erase Resume Commands ...................................................111
Command Definitions ........................................................................................113
Write Operation Status ................................................................................... 115
Table 35. Command Definitions (x16 Mode, BYTE# = V
IH
) .... 113
Table 36. Command Definitions (x8 Mode, BYTE# = V
IL
) ....... 114
Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBit
TM
Flash Family
3
DQ7: Data# Polling ........................................................................................... 115
Figure 7. Data# Polling Algorithm....................................... 116
RY/BY#: Ready/Busy# ...................................................................................... 116
DQ6: Toggle Bit I ............................................................................................... 117
Figure 8. Toggle Bit Algorithm............................................ 118
133
Figure 20. Toggle Bit Timings (During Embedded Algorithms) 134
Figure 21. DQ2 vs. DQ6.................................................... 134
Temporary Sector Unprotect .......................................................................134
Figure 22. Temporary Sector Group Unprotect Timing Diagram 135
Figure 23. Sector Group Protect and Unprotect Timing Diagram 135
DQ2: Toggle Bit II ...............................................................................................119
Reading Toggle Bits DQ6/DQ2 ..................................................................... 119
DQ5: Exceeded Timing Limits ....................................................................... 119
DQ3: Sector Erase Timer ................................................................................ 119
DQ1: Write-to-Buffer Abort .........................................................................120
Table 37. Write Operation Status ........................................120
Figure 9. Maximum Negative Overshoot Waveform............... 121
Figure 10. Maximum Positive
Overshoot Waveform........................................................ 121
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 121
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 122
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 11. Test Setup ....................................................... 123
Table 38. Test Specifications ..............................................123
Alternate CE# Controlled Erase and Program Operations-S29GL256M
136
Alternate CE# Controlled Erase and Program Operations-S29GL128M
137
Alternate CE# Controlled Erase and Program Operations-S29GL064M
138
Alternate CE# Controlled Erase and Program Operations-S29GL032M
139
Figure 24. Alternate CE# Controlled Write (Erase/
Program) Operation Timings.............................................. 140
Key to Switching Waveforms . . . . . . . . . . . . . . 123
Figure 12. Input Waveforms and
Measurement Levels ......................................................... 123
Erase and Programming Performance . . . . . . . . 141
TSOP Pin and BGA Package Capacitance . . . . .142
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . .143
TS040—40-Pin Standard Thin Small Outline Package ...........................143
TSR040—40-Pin Standard/Reverse Thin Small Outline Package (TSOP)
144
TS048—48-Pin Standard/Reverse Thin Small Outline Package (TSOP)
145
TSR048—48-Pin Standard/Reverse Thin Small Outline Package (TSOP)
146
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ..................................................................................................................147
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................148
LAC064—64-Pin 18 x 12 mm package .........................................................149
FBA048—48-Pin 6.15 x 8.15 mm package ...................................................150
FBC048—48-Pin 8 x 9 mm package ............................................................151
FBE063—63-Pin 12 x 11 mm package ............................................................152
FPT-48P-M19 ....................................................................................................... 153
FPT-56P-M01 ....................................................................................................... 153
FBG048—48-pin 8 x 6 mm package ...........................................................154
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 124
Read-Only Operations-S29GL256M only .................................................. 124
Read-Only Operations-S29GL128M only ................................................... 124
Read-Only Operations-S29GL064M only .................................................. 125
Read-Only Operations-S29GL032M only .................................................. 125
Figure 13. Read Operation Timings ..................................... 126
Figure 14. Page Read Timings............................................ 126
Hardware Reset (RESET#) ............................................................................. 127
Figure 15. Reset Timings................................................... 127
Erase and Program Operations-S29GL256M only ..................................128
Erase and Program Operations-S29GL128M Only ................................. 129
Erase and Program Operations-S29GL064M Only ................................ 130
Erase and Program Operations-S29GL032M only ....................................131
Figure 16. Program Operation Timings ................................ 132
Figure 17. Accelerated Program Timing Diagram .................. 132
Figure 18. Chip/Sector Erase Operation Timings ................... 133
Figure 19. Data# Polling Timings (During Embedded Algorithms) .
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .155
4
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
Product Selector Guide
S29GL256M
Part Number
Speed Option
Max. Access Time (ns)
Max. CE# Access Time (ns)
Max. Page Access Time (ns)
Max. OE# Access Time (ns)
10
S29GL256M
11
100
100
30
30
110
110
30
30
S29GL128M
Part Number
Speed Option
Max. Access Time (ns)
Max. CE# Access Time (ns)
Max. Page Access Time (ns)
Max. OE# Access Time (ns)
90
S29GL128M
10
90
90
25
25
100
100
30
30
S29GL064M
Part Number
Speed Option
Max. Access Time (ns)
Max. CE# Access Time (ns)
Max. Page Access Time (ns)
Max. OE# Access Time (ns)
90
S29GL064M
10
11
90
90
25
25
100
100
30
30
110
110
30
30
S29GL032M
Part Number
Speed Option
Max. Access Time (ns)
Max. CE# Access Time (ns)
Max. Page Access Time (ns)
Max. OE# Access Time (ns)
90
S29GL032M
10
11
90
90
25
25
100
100
30
30
110
110
30
30
Octorber 18, 2004 S29GLxxxM_00_B3
S29GLxxxM MirrorBit
TM
Flash Family
5
PCB设计
