S29GL-M MirrorBitTM Flash Family
S29GL256M, S29GL128M, S29GL064M,
S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit
3.0 Volt-only Page Mode Flash Memory Featuring
0.23 µm MirrorBit Process Technology
Data Sheet
For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,
respectively.. These are factory-recommended product migrations. Please refer to the S29GL-A and S29GL-N data sheets for specifications and
ordering information.
Notice to Readers:
This document states the current technical specifications
regarding the Spansion product(s) described herein. Spansion LLC deems the
products to have been in sufficient production volume such that subsequent
versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered
may occur.
Publication Number
S29GL-M_00
Revision
B
Amendment
5
Issue Date
December 13, 2005
D a t a
S h e e t
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more spe-
cific products, but has not committed any design to production. Information presented in a doc-
ument with this designation is likely to change, and in some cases, development on the product
may discontinue. Spansion LLC therefore places the following conditions upon Advance Informa-
tion content:
“This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or V
IO
range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion LLC applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.
ii
S29GL256M, S29GL128M, S29GL064M, S29GL032M
S29GL-M_00_B5 December 13, 2005
S29GL-M MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory Featuring
0.23 µm MirrorBit Process Technology
Data Sheet
For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,
respectively.. These are factory-recommended product migrations. Please refer to the S29GL-A and S29GL-N data sheets for specifications and
ordering information.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256 Mb: 512 32-Kword (64 Kbyte) sectors
— 128 Mb: 256 32-Kword (64 Kbyte) sectors
— 64 Mb (uniform sector models): 128 32-Kword
(64-Kbyte) sectors or 128 32 Kword sectors
— 64 Mb (boot sector models): 127 32-Kword
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
— 32 Mb (uniform sector models): 64 32-Kword
(64-Kbyte) sectors of 64 32-Kword sectors
— 32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
sectors + 8 4-Kword (8-Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Low power consumption (typical values at 3.0 V,
5 MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 90 ns access time (128 Mb, 64 Mb, 32 Mb),
100 ns access time (256 Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128 Mb, 64 Mb, 32 Mb)
— 30 ns page read times (256 Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Publication Number
S29GL-M_00
Revision
B
Amendment
5
Issue Date
December 13, 2005
D a t a
S h e e t
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufac-
tured using 0.23 µm MirrorBit technology. The S29GL256M is a 256†Mbit, organized as
16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608
words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or
8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304
bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide
data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The devices can be programmed either in the host system or in standard EPROM
programmers.
Access times as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M)
are available. Note that each access time has a specific operating voltage range (V
CC
) as specified
in
Product Selector Guide
and
Ordering Information.
Package offerings include 40-pin TSOP, 48-
pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and write functions. In
addition to a V
CC
input, a high-voltage
accelerated program (ACC)
feature provides shorter
programming times through increased current on the WP#/ACC input. This feature is intended to
facilitate factory throughput during system production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash
standard.
Commands are written to the device using standard microprocessor write timing.
Write cycles also internally latch addresses and data needed for the programming and erase
operations.
The
sector erase architecture
allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the
factory.
Device programming and erasure are initiated through command sequences. Once a program or
erase operation starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy# (RY/BY#)
output to determine whether the opera-
tion is complete. To facilitate programming, an
Unlock Bypass
mode reduces command
sequence overhead by requiring only two write cycles to program data instead of four.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write
operations during power transitions. The hardware sector protection feature disables both pro-
gram and erase operations in any combination of sectors of memory. This can be achieved in-
system or via programming equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an erase operation
in a given sector to read or program any other sector and then complete the erase operation. The
Program Suspend/Program Resume
feature enables the host system to pause a program op-
eration in a given sector to read any other sector and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the device, after
which it is then ready for a new operation. The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the device, enabling the host system to read boot-
up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage
levels on CE# and RESET#, or when addresses are stable for a specified period of time.
2
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B5 December 13, 2005
D a t a
S h e e t
The
Write Protect (WP#)
feature protects the first or last sector by asserting a logic low on the
WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected
even during accelerated programming.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected, no further changes within the sector can
occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience
to produce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed
using hot electron injection.
December 13, 2005 S29GL-M_00_B5
S29GL-M MirrorBit
TM
Flash Family
3
