(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 80 ns access time (S29GL128N, S29GL256N),
90 ns access time (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Publication Number
27631
Revision
A
Amendment
4
Issue Date
May 13, 2004
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the
right to change or discontinue work on this proposed product without notice.
A d v a n c e
I n f o r m a t i o n
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory
manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit,
organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256
Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a
128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have
a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The device can be programmed either in the host system or in
standard EPROM programmers.
Access times as fast as 80 ns (S29GL128N, S29GL256N) or 90 ns (S29GL512N)
are available. Note that each access time has a specific operating voltage range
(V
CC
) and an I/O voltage range (V
IO
), as specified in the
Product Selector Guide
and the
Ordering Information (512 Mb)
sections. The devices are offered in a 56-
pin TSOP or 64-ball Fortified BGA package. Each device has separate chip enable
(CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and
write functions. In addition to a V
CC
input, a high-voltage
accelerated program
(WP#/ACC)
input provides shorter programming times through increased cur-
rent. This feature is intended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The devices are entirely command set compatible with the
JEDEC single-
power-supply Flash standard.
Commands are written to the device using
standard microprocessor write timing. Write cycles also internally latch addresses
and data needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy#
(RY/BY#)
output to determine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
The
Enhanced VersatileI/O™
(V
IO
) control allows the host system to set the
voltage levels that the device generates and tolerates on all input levels (address,
chip control, and DQ input levels) to the same voltage level that is asserted on
the V
IO
pin. This allows the device to operate in a 1.8 V or 3 V system environ-
ment as required.
Hardware data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions.
Persistent Sector
Protection
provides in-system, command-enabled protection of any combina-
tion of sectors using a single power supply at V
CC
.
Password Sector Protection
prevents unauthorized write and erase operations in any combination of sectors
through a user-defined 64-bit password.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The
Program Suspend/Program Resume
fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
2
S29GLxxxN MirrorBitTM Flash Family
27631A4 May 13, 2004
A d v a n c e
I n f o r m a t i o n
The
hardware RESET# pin
terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the device,
enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the
standby mode
when it detects
specific voltage levels on CE# and RESET#, or when addresses have been stable
for a specified period of time.
The
SecSi™ (Secured Silicon) Sector
provides a 128-word/256-byte area for
code or data that can be permanently protected. Once this sector is protected,
no further changes within the sector can occur.
The
Write Protect (WP#/ACC)
feature protects the first or last sector by as-
serting a logic low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing expe-
rience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via hot-hole
assisted erase. The data is programmed using hot electron injection.
