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S29GL128N11TAIV12

Flash, 8MX16, 110ns, PDSO56,

器件类别:存储    存储   

厂商名称:AMD(超微)

厂商官网:http://www.amd.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
TSSOP, TSSOP56,.8,20
Reach Compliance Code
unknown
最长访问时间
110 ns
备用内存宽度
8
命令用户界面
YES
通用闪存接口
YES
数据轮询
YES
JESD-30 代码
R-PDSO-G56
JESD-609代码
e0
内存密度
134217728 bit
内存集成电路类型
FLASH
内存宽度
16
部门数/规模
128
端子数量
56
字数
8388608 words
字数代码
8000000
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP56,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小
8/16 words
并行/串行
PARALLEL
电源
1.8/3.3,3/3.3 V
认证状态
Not Qualified
就绪/忙碌
YES
部门规模
128K
最大待机电流
0.000005 A
最大压摆率
0.09 mA
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
切换位
YES
类型
NOR TYPE
Base Number Matches
1
文档预览
S29GL-N MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
ADVANCE
INFORMATION
Notice to Readers:
The Advance Information status indicates that this
document contains information on one or more products under development
at Spansion LLC. The information is intended to help you evaluate this product.
Do not design in this product without contacting the factory. Spansion LLC
reserves the right to change or discontinue work on this proposed product
without notice.
Publication Number
S29GL-N_00
Revision
A
Amendment
7
Issue Date
February 14, 2005
This page intentionally left blank.
S29GL-N MirrorBit
TM
Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit process technology
Data Sheet
ADVANCE
INFORMATION
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on V
IO
input.
V
IO
range is 1.65 to V
CC
Manufactured on 110 nm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles per sector typical
20-year data retention typical
256 Mb
Software & Hardware Features
Software features
— Program Suspend and Resume: read other sectors
before programming operation is completed
— Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Product Availability Table
Density
512 Mb
Init. Access
110 ns
100 ns
110 ns
100 ns
90 ns
110 ns
V
CC
Full
Availability
Now
Not Yet Available
Full
ES sampling
Not Yet Available
Not Yet Available
Full
Now
Performance Characteristics
High performance
— 90 ns access time (S29GL128N, S29GL256N)
— 100 ns (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
128 Mb
100 ns
90 ns
Not Yet Available
Not Yet Available
Publication Number
S29GL-N_00
Revision
A
Amendment
7
Issue Date
February 14, 2005
This document contains information on a product under development at Spansion LLC. The information is intended to help you evaluate this product. Spansion LLC
reserves the right to change or discontinue work on this proposed product without notice.
A d v a n c e
I n f o r m a t i o n
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more spe-
cific products, but has not committed any design to production. Information presented in a doc-
ument with this designation is likely to change, and in some cases, development on the product
may discontinue. Spansion LLC therefore places the following conditions upon Advance Informa-
tion content:
“This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or V
IO
range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion LLC applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.
2
S29GL-N MirrorBit
TM
Flash Family
S29GL-N_00_A7 February 14, 2005
A d v a n c e
I n f o r m a t i o n
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory
manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit,
organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256
Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a
128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have
a 16-bit wide data bus that can also function as an 8-bit wide data bus by using
the BYTE# input. The device can be programmed either in the host system or in
standard EPROM programmers.
Access times as fast as 90 ns (S29GL128N, S29GL256N), 100 ns (S29GL512N)
are available. Note that each access time has a specific operating voltage range
(V
CC
) and an I/O voltage range (V
IO
), as specified in the
Product Selector Guide‚
on page 7
and the
Ordering Information‚ on page 13.
The devices are offered in
a 56-pin TSOP or 64-ball Fortified BGA package. Each device has separate chip
enable (CE#), write enable (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and
write functions. In addition to a V
CC
input, a high-voltage
accelerated program
(WP#/ACC)
input provides shorter programming times through increased cur-
rent. This feature is intended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The devices are entirely command set compatible with the
JEDEC single-
power-supply Flash standard.
Commands are written to the device using
standard microprocessor write timing. Write cycles also internally latch addresses
and data needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy#
(RY/BY#)
output to determine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
The
Enhanced VersatileI/O™
(V
IO
) control allows the host system to set the
voltage levels that the device generates and tolerates on all input levels (address,
chip control, and DQ input levels) to the same voltage level that is asserted on
the V
IO
pin. This allows the device to operate in a 1.8 V or 3 V system environ-
ment as required.
Hardware data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions.
Persistent Sector
Protection
provides in-system, command-enabled protection of any combina-
tion of sectors using a single power supply at V
CC
.
Password Sector Protection
prevents unauthorized write and erase operations in any combination of sectors
through a user-defined 64-bit password.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The
Program Suspend/Program Resume
fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
February 14, 2005 S29GL-N_00_A7
S29GL-N MirrorBit
TM
Flash Family
3
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