S2N7002
115 mA, 60 V,
R
DS(ON)
= 7.5
Elektronische Bauelemente
N-Ch Small Signal MOSFET
SOT-23
A
3
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
L
Pb-Free Package is Available
1
PACKAGING INFORMATION
Drain
3
Top View
2
C B
1
2
Drain
K
E
D
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.80
2.00
0.30
0.50
702
..
1
Gate
2
Source
H
Millimeter
Min.
Max.
0.013
0.10
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
J
Gate
REF.
G
H
J
K
L
702 =Device Code
W =Date Code
Source
MAXIMUM RATINGS
(at T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage(R
GS
=1.0 MΩ)
1
T
C
=25°C
Continuous Drain Current
1
T
C
=100°C
2
Pulsed Drain Current
Continuous Gate-Source Voltage
Non-Repetitive Gate-Source Voltage(t
P
≦
50μS)
SYMBOL
V
DSS
V
DGR
RATING
UNIT
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vpk
mW
mW/°C
°C/W
°C
60
60
±115
I
D
±75
I
DM
±800
V
GS
±20
V
GSM
±40
THERMAL CHARACTERISTICS
Total Device Dissipation
T
A
=25°C
225
P
D
3
FR-5 Board
1.8
Derate above 25°C
Thermal Resistance, Junction to Ambient
R
θJA
556
Junction and Storage Temperature
T
J
, T
STG
-55~150
Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦
2.0%
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Breakdown Voltage
T =25°C
Zero Gate Voltage Drain Current
J
T
J
=125°C
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
SYMBOL
MIN.
TYP.
MAX.
UNIT
Vdc
μAdc
nAdc
nAdc
Vdc
mA
TEST CONDITION
V
GS
= 0, I
D
= 10μAdc
V
GS
=0, V
DS
= 60Vdc
V
GS
=20Vdc
V
GS
=-20Vdc
OFF CHARACTERISTICS
V
(BR)DSS
60
-
-
-
-
1.0
I
DSS
-
-
500
I
GSSF
-
-
100
I
GSSR
-
-
-100
1
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
On-State Drain Current
I
D(ON)
500
-
-
-
-
3.75
Static Drain-Source On-State Voltage
V
DS(ON)
-
-
0.375
Static Drain-Source On-State Resistance
-
1.4
7.5
R
DS(ON)
(T
A
=25°C)
-
1.8
7.5
Static Drain-Source On-State Resistance
-
-
13.5
R
DS(ON)
(T
A
=125°C)
-
-
13.5
Forward Transconductance
g
FS
80
-
-
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
-
17
50
Output Capacitance
C
oss
-
10
25
Reverse Transfer Capacitance
C
rss
-
2.5
5.0
1
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td
(ON)
-
7
20
Turn-Off Delay Time
td
(OFF)
-
11
40
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
V
SD
-
-
-1.5
Source Current Continuous(Body Diode)
I
S
-
-
-115
Source Current Pulsed
I
SM
-
-
-800
Note: 1. Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦
2.0%
http://www.SeCoSGmbH.com/
V
DS
= V
GS
, I
D
=250μAdc
V
DS
≧
2.0V
DS(ON)
,V
GS
=10Vdc
V
GS
=10Vdc, I
D
=500mAdc
Vdc
V
GS
=5Vdc, I
D
=50mAdc
V
GS
=10Vdc, I
D
=500mAdc
Ω
V
GS
=5Vdc, I
D
=50mAdc
V
GS
=10Vdc, I
D
=500mAdc
Ω
V
GS
=5Vdc, I
D
=50mAdc
mmhos V
DS
≧
2V
DS(ON),
I
D
=200mAdc
pF
pF
pF
nS
Vdc
mAdc
mAdc
V
DS
=25Vdc, V
GS
=0, f=1MHz
V
DS
=25Vdc, V
GS
=0, f=1MHz
V
DS
=25Vdc, V
GS
=0, f=1MHz
V
DD
=25Vdc, ,I
D
500mAdc
R
G
=25Ω,R
L
=50Ω, V
GEN
=10V
I
S
=11.5mAdc,V
GS
=0V
Any changes of specification will not be informed individually.
15-Sep-2014 Rev. C
Page 1 of 2
S2N7002
115 mA, 60 V,
R
DS(ON)
= 7.5
Elektronische Bauelemente
N-Ch Small Signal MOSFET
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Sep-2014 Rev. C
Page 2 of 2
