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S3DHM6

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.15 V
JEDEC-95代码
DO-214AB
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
100 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
400 V
最大反向电流
10 µA
最大反向恢复时间
1.5 µs
表面贴装
YES
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
S3A thru S3M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
Maximum reverse current @ rated VR
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3
100
1.15
10
250
1.5
60
13
47
- 55 to +150
- 55 to +150
O
S3J
600
420
600
S3K S3M
800
560
800
1000
700
1000
Unit
V
V
V
A
A
V
μA
μs
pF
C/W
O
O
C
C
Document Number: DS_D1405068
Version: I14
S3A thru S3M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
S3x
(Note 1)
R7
Prefix "H"
R6
M6
Suffix "G"
PACKING CODE GREEN COMPOUND
CODE
SMC
SMC
SMC
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xx" defines voltage from 50V (S3A) to 1000V (S3M)
EXAMPLE
PREFERRED P/N PART NO.
S3M R7
S3M R7G
S3MHR7
S3M
S3M
S3M
H
AEC-Q101
QUALIFIED
PACKING CODE
R7
R7
R7
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
INSTANTANEOUS REVERSE CURRENT
(μA)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
3.5
AVERAGE FORWARD CURRENT (A)
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVE LOAD
10
TJ=125℃
1
TJ=25℃
0
20
40
60
80
100
120
140
0.1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE URRENT (A)
INSTANTANEOUS FORWARD CURRENT
(A)
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
10
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
FORWARD VOLTAGE (V)
8.3ms Single Half Sine Wave
10
1
10
100
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1405068
Version: I14
S3A thru S3M
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE (pF)
10
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
2.90
6.60
5.59
2.00
1.00
7.75
0.10
0.15
Max
3.20
7.11
6.22
2.62
1.60
8.13
0.20
0.31
Unit (inch)
Min
0.114
0.260
0.220
0.079
0.039
0.305
0.004
0.006
Max
0.126
0.280
0.245
0.103
0.063
0.320
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
3.3
2.5
6.8
4.4
9.4
Unit (inch)
0.130
0.098
0.268
0.173
0.370
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405068
Version: I14
S3A thru S3M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405068
Version: I14
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