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S3JB

Rectifier Diode, 1 Element, 3A, 600V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
Reach Compliance Code
unknown
Is Samacsys
N
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.15 V
最大非重复峰值正向电流
100 A
元件数量
1
最高工作温度
150 °C
最大输出电流
3 A
最大重复峰值反向电压
600 V
表面贴装
YES
Base Number Matches
1
文档预览
BL
FEATURES
GALAXY ELECTRICAL
S3AB - - - S3MB
111REVERSE
VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIER
Plastic package has underwriters laboratory
111
flammability classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
½½½½(½½)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
S3AB
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum average forw ord rectified current
V
@ T
L
=90
O
C
Peak forw ard surge current @ T
L
= 110°C 8.3ms
V
single half-sine-w ave superimposed on rated
V
load(JEDEC Method)
Maximum Instantaneous forw ard voltage at 3.0 A
Maximum DC reverse current
at rated DC blockjing voltage
Typical junction capacitance
Typical thermal resitance (NOTE 2)
@T
A
=25
o
C
@T
A
=100
o
C
S3BB
SBB
100
70
100
S3DB S3GB S3JB S3KB S3MB
UNITS
SDB
200
140
200
SAB
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
JA
SGB
400
280
400
3.0
100
1.15
10
100
35
40
SJB
600
420
600
SKB
800
560
800
SMB
1000
700
1000
V
V
V
A
A
V
50
35
50
pF
o
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
-55--------+150
C
www.galaxycn.com
2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm
2
) copper pad areas
Document Number 0280011
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE
CURRENT,AMPERES
Resistive or inductive
Load
S3AB - - - S3MB
FIG.2 PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD
CURRENT,AMPERES
3.0
100
T
L
=110 C
8.3ms Single Half Sine Wave
(JEDEC Method)
O
2.0
50
1.0
60Hz Resistive or
Inductive load
P.C.B.MOUNTED
0.27''X0.27''(7.0X7.0mm)
THICK COPPERPAND AREAS
0
50 60
70
80
90
100 110 120 130 140 150
1
1
10
1 00
LEAD TEMPERATURE
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
100
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
10
T
J
=125 C
O
1
T
J
=25 C
O
1
T
J
=75 C
O
0.1
0.1
Puise Width=300 S
1%DUTY CYCLE
0.01
T
J
=25
O
C
0.01
0.4
0.6
0.8
1.0.
1.2
1.4
1.6
1.8
2.0
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE pF
60
40
20
10
f=1MHz
T
J
=25
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0280011
BL
GALAXY ELECTRICAL
2.
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