PHOTODIODE
Si PIN photodiode
S5821 series
High performance, high reliability Si PIN photodiodes
S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series
provides high performance and reliability at a low cost.
Features
Applications
l
High-speed response
l
Wide spectral response
l
Low dark current
l
Low terminal capacitance
l
Optical switch
l
Automobile optical sensor
l
General photometry
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
➀/K
➁/L
➂/K
➃/L
Package
(mm)
TO-18
Active
area size
(mm)
φ1.2
Effective
active area
(mm
2
)
1.1
Absolute maximum ratings
Power
Operating
Storage
Reverse
dissipation temperature temperature
voltage
P
Topr
Tstg
V
R
Max.
(V)
(mW)
(°C)
(°C)
20
50
-40 to +100 -55 to +125
S5821
S5821-01
S5821-02
S5821-03
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Terminal
Short
Dark
Temp.
Cut-off
NEP
capacitance
circuit
current
coefficient frequency
V
R
=10 V
Ct
current
I
D
of I
D
fc
Type No.
V
R
=10 V
V
R
=10 V
Isc
λ=λp
T
CID
V
R
=10 V
(nA)
f=1 MHz
λp
660 nm 780 nm 830 nm 100
lx
(nm)
(nm)
(µA) Typ. Max. (times/°C) (MHz)
(pF)
(W/Hz
1/2
)
S5821
1.1
S5821-01
12
320 to 1100 960 0.6 0.45 0.52 0.55
0.05 2
1.15
25
3
6.7 × 10
-15
S5821-02
1.1
12
S5821-03
* Window material K: borosilicate glass, L: lens type borosilicate glass
Spectral Peak
response sensitivity
range wavelength
λp
λ
Photo sensitivity
S
(A/W)
1
Si PIN photodiode
s
Spectral response
(Typ. Ta=25 ˚
C)
30˚
0.6
S5821 series
s
Directivity
20˚
10˚
0˚
100 %
(Typ. Ta=25 ˚C)
10˚
20˚
30˚
0.7
PHOTO SENSITIVITY (A/W)
80 %
0.5
40˚
0.4
0.3
0.2
0.1
S5821
S5821-02
40˚
60 %
50˚
40 %
60˚
70˚
80˚
20%
S5821-01
S5821-03
50˚
60˚
70˚
80˚
90˚
0
200
90˚
400
600
800
1000
WAVELENGTH (nm)
RELATIVE SENSITIVITY
KPINB0151EA
KPINB0091EA
s
Photo sensitivity temperature characteristic
(Typ.)
s
Frequency response
(Typ. Ta=25 ˚C,
λ=830
nm, R
L
=50
Ω,
V
R
=10 V)
+1.5
+10
TEMPERATURE COEFFICIENT (%/˚C)
RELATIVE OUTPUT (dB)
+1.0
0
-3
+0.5
-10
0
-0.5
200
400
600
800
1000
-20
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
WAVELENGTH (nm)
FREQUENCY
KPINB0152EA
KPINB0153EA
2
Si PIN photodiode
s
Cut-off frequency vs. reverse voltage
1 GHz
(Typ. Ta=25 ˚C,
λ=830
nm, R
L
=50
Ω)
S5821 series
s
Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
1 nA
CUT-OFF FREQUENCY
100 MHz
DARK CURRENT
1
10
100
100 pA
10 MHz
10 pA
1 MHz
1 pA
0.1
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KPINB0154EA
KPINB0155EA
s
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
TERMINAL CAPACITANCE
10 pF
1 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0156EA
3
Si PIN photodiode
s
Dimensional outline (unit: mm)
➀
S5821
WINDOW
3.0 ± 0.2
5.4 ± 0.2
S5821 series
➁
S5821-01
5.4 ± 0.2
2.15 ± 0.3
14
4.5 ± 0.2
2.8
3.6 ± 0.2
4.7 ± 0.1
4.65 ± 0.1
0.45
LEAD
0.45
LEAD
2.54 ± 0.2
8.5
2.3
2.54 ± 0.2
CONNECTED TO CASE
CONNECTED TO CASE
KPINA0074EB
KPINA0075EA
➂
S5821-02
WINDOW
3.0 ± 0.2
5.4 ± 0.2
3.6 ± 0.2
➃
S5821-03
5.4 ± 0.2
4.65 ± 0.1
2.15 ± 0.3
4.7 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
13
2.54 ± 0.2
2.54 ± 0.2
CASE
CASE
KPINA0022EB
13
4.5 ± 0.2
2.8
2.8
KPINA0046EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KPIN1010E02
Aug. 2006 DN
