S71JL128HC0/128HB0/064HB0/
064HA0/064H80
Stacked Multi-Chip Product (MCP) Flash Memory
and pSRAM CMOS 3.0 Volt-only,
Simultaneous Operation Flash Memories and
Static RAM/Pseudo-static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Operating Voltage Range of 2.7 to 3.3 V
High Performance
— Access time as fast as 55 ns
Packages
— 73-ball FBGA—8 x 11.6 mm
— 88-ball FBGA—8 x 11.6 mm
Operating Temperatures
— Wireless: –25°C to +85°C
— Industrial: –40°C to +85°C
PRELIMINARY
GENERAL DESCRIPTION
The S71JLxxxH Series is a product line of stacked Multi-Chip
Products (MCP) and consists of
One or more S29JL064H Flash devices
SRAM or pSRAM options
— 8Mb x 8/x 16 SRAM
— 16Mb x 16-only SRAM
— pSRAM x 16 only:
8Mb pSRAM
16Mb pSRAM
32Mb pSRAM
64Mb pSRAM
The products covered by this document are listed below. For
details about their specifications, please refer to the individual
constituent data sheets for further details.
MCP
S71JL064H80
S71JL064HA0
S71JL064HB0
S71JL128HB0
S71JL128HC0
Number of S29JL064H
1
1
1
2
2
Total Flash Density
64Mb
64Mb
64Mb
128Mb
128Mb
SRAM/pSRAM Density
8Mb
16Mb
32Mb
32Mb
64Mb
Notes:
1. This MCP is only guaranteed to operate @ 2.7 - 3.3 V regardless of component operating ranges.
2. BYTE# operation is only supported on the S71JL064H80xx0x.
Publication Number
S29JLxxxHxx_00
Revision
A
Amendment
1
Issue Date
February 25, 2004
P r e l i m i n a r y
Product Selector Guide
Device-Model #
S71JL064H80Bxx01
S71JL064H80Bxx02
S71JL064H80Bxx10
S71JL064H80Bxx11
S71JL064H80Bxx12
SRAM/pSRAM Density
8Mb
8Mb
8Mb
8Mb
8Mb
SRAM/pSRAM Type
SRAM - x8/x16
SRAM - x8/x16
pSRAM - x16
pSRAM - x16
pSRAM - x16
Supplier
Supplier 1
Supplier 1
Supplier 2
Supplier 2
Supplier 2
Flash Access RAM Access
Time (ns)
Time (ns)
70
85
55
70
85
70
85
55
70
85
Packages
FLB073
FLB073
FLJ073
FLJ073
FLJ073
S71JL064HA0Bxx01
S71JL064HA0Bxx02
S71JL064HA0Bxx10
S71JL064HA0Bxx11
S71JL064HA0Bxx12
S71JL064HA0Bxx62
16Mb
16Mb
16Mb
16Mb
16Mb
16Mb
SRAM - x16
SRAM - x16
pSRAM - x16
pSRAM - x16
pSRAM - x16
pSRAM - x16
Supplier 1
Supplier 1
Supplier 2
Supplier 2
Supplier 2
Supplier 4
70
85
55
70
85
70
70
85
55
70
85
70
FLB073
FLB073
FLJ073
FLJ073
FLJ073
FLJ073
S71JL128HB0Bxx01
S71JL128HB0Bxx02
32Mb
32Mb
pSRAM - x16
pSRAM - x16
Supplier 3
Supplier 3
70
85
70
85
FTA073
FTA073
S71JL128HC0Bxx01
S71JL128HC0Bxx02
64Mb
64Mb
pSRAM - x16
pSRAM - x16
Supplier 3
Supplier 3
70
85
70
85
FTA088
FTA088
2
S71JL128HC0/128HB0/064HB0/064HA0/064H80
S29JLxxxHxx_00A1 February 25, 2004
A d v a n c e
I n f o r m a t i o n
TABLE OF CONTENTS
S71JL128HC0/128HB0/064HB0/064HA0/064H80
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .2
Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
MCP Block Diagram of S71JL064H80, Model Numbers 01/02 ................6
MCP Block Diagram of S71JL064H80, Model Numbers 10/11/12 ..............6
MCP Block Diagram of S71JL064HA0, Model Numbers 01/02 ................7
MCP Block Diagram of S71JL064HA0, Model Numbers 10/11/12/61 ........7
MCP Block Diagram of S71JL064HB0, Model Numbers 00/01/02 ..........8
MCP Block Diagram of S71JL128HB0, Model Numbers 00/01/02 ...........9
MCP Block Diagram of S71JL128HC0, Model Numbers 00/01/02 ........ 10
Requirements for Reading Array Data ........................................................ 43
Writing Commands/Command Sequences ................................................ 43
Accelerated Program Operation ...............................................................44
Autoselect Functions .....................................................................................44
Simultaneous Read/Write Operations with Zero Latency ...................44
Standby Mode ......................................................................................................44
Automatic Sleep Mode .....................................................................................44
RESET#: Hardware Reset Pin ......................................................................... 45
Output Disable Mode ....................................................................................... 45
Table 2. S29JL064H Sector Architecture ............................... 46
Table 3. Bank Address ........................................................ 49
Table 4. SecSi™ Sector Addresses ...................................... 49
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 11
Connection Diagram of S71JL064H80, Model Numbers 01/02 .............. 11
Special Package Handling Instructions ...................................................... 12
Pin Description ................................................................................................ 12
Logic Symbol .....................................................................................................13
Connection Diagram of S71JL064H80, Model Numbers 10/11/12 ........... 14
Pin Description .................................................................................................15
Logic Symbol .....................................................................................................15
Connection Diagram of S71JL064HA0, Model Numbers 01/02 ............. 16
Pin Description .................................................................................................17
Logic Symbol .................................................................................................... 18
Connection Diagram of S71JL064HA0, Model Numbers 10/11/12/61 ..... 19
Pin Description ............................................................................................... 20
Logic Symbol ................................................................................................... 20
Connection Diagram of S71JL064HB0, Model Numbers 00/01/02 ....... 21
Pin Description ............................................................................................... 22
Logic Symbol ................................................................................................... 22
Connection Diagram of S71JL128HB0, Model Numbers 00/01/02 ........23
Pin Description ............................................................................................... 24
Logic Symbol ................................................................................................... 24
Connection Diagram of S71JL128HC0, Model Numbers 00/01/02 .......25
Special Package Handling Instructions ......................................................25
Pin Description ............................................................................................... 26
Logic Symbol ................................................................................................... 26
Look-ahead Connection Diagram ..................................................................27
Autoselect Mode ................................................................................................49
Sector/Sector Block Protection and Unprotection .................................50
Table 5. S71JLxxxHxx_00 Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................... 50
Write Protect (WP#) ........................................................................................ 51
Table 6. WP#/ACC Modes ................................................... 52
Temporary Sector Unprotect ........................................................................ 52
Figure 1. Temporary Sector Unprotect Operation ................... 52
Figure 2. In-System Sector Protect/Unprotect Algorithms ....... 53
SecSi™ (Secured Silicon) Sector Flash Memory Region .......................... 53
Factory Locked: SecSi Sector Programmed and Protected At the
Factory ............................................................................................................... 54
Customer Lockable: SecSi Sector NOT Programmed or Protected At
the Factory ....................................................................................................... 54
Figure 3. SecSi Sector Protect Verify .................................... 55
Hardware Data Protection ............................................................................. 55
Low VCC Write Inhibit ................................................................................ 55
Write Pulse “Glitch” Protection ............................................................... 55
Logical Inhibit ................................................................................................... 56
Power-Up Write Inhibit ............................................................................... 56
Common Flash Memory Interface (CFI) . . . . . . 56
Table 7. CFI Query Identification String ................................ 56
Table 8. System Interface String ......................................... 57
Table 9. Device Geometry Definition .................................... 57
Table 10. Primary Vendor-Specific Extended Query ................ 58
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 59
Reading Array Data ........................................................................................... 59
Reset Command ................................................................................................. 59
Autoselect Command Sequence ....................................................................60
Enter SecSi™ Sector/Exit SecSi Sector Command Sequence ................60
Byte/Word Program Command Sequence .................................................60
Unlock Bypass Command Sequence ......................................................... 61
Figure 4. Program Operation ............................................... 62
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .29
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 33
FLB073 ....................................................................................................................33
FLJ073 ......................................................................................................................34
FTA073 ...................................................................................................................35
FTA088 ..................................................................................................................36
S29JL064H
Chip Erase Command Sequence ................................................................... 62
Sector Erase Command Sequence ................................................................ 63
Figure 5. Erase Operation ................................................... 64
General Description 38
Simultaneous Read/Write Operations with Zero Latency ....................38
S71JLxxxHxx_00 Features ................................................................................38
Erase Suspend/Erase Resume Commands ..................................................64
Table 11. S29JL064H Command Definitions .......................... 65
Write Operation Status . . . . . . . . . . . . . . . . . . . . 66
DQ7: Data# Polling ............................................................................................ 66
Figure 6. Data# Polling Algorithm ........................................ 68
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .40
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .42
Table 1. S71JLxxxHxx_00 Device Bus Operations .................. 42
RY/BY#: Ready/Busy# .......................................................................................68
DQ6: Toggle Bit I ...............................................................................................69
Figure 7. Toggle Bit Algorithm ............................................. 70
Word/Byte Configuration ................................................................................ 43
DQ2: Toggle Bit II ..............................................................................................70
Reading Toggle Bits DQ6/DQ2 ...................................................................... 71
DQ5: Exceeded Timing Limits ......................................................................... 71
February 24, 2004 S71JLxxxHxx_00A0
3
A d v a n c e
I n f o r m a t i o n
DQ3: Sector Erase Timer ..................................................................................71
Table 12. Write Operation Status ......................................... 72
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . 73
Figure 8. Maximum Negative Overshoot Waveform ................. 73
Figure 9. Maximum Positive Overshoot Waveform .................. 73
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .73
Wireless (W) Devices ...................................................................................73
Industrial (I) Devices ......................................................................................73
V
CC
Supply Voltages ......................................................................................73
Table 13. CMOS Compatible ................................................ 74
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 74
Figure 28. Timing Waveform of Read Cycle(1) (address controlled,
CD#1=OE#=V
IL
, CS2=WE#=V
IH
, UB# and/or LB#=V
IL
) ........ 93
Figure 29. Timing Waveform of Read Cycle(2) (WE#=V
IH
, if BYTE#
is low, ignore UB#/LB# timing) ........................................... 93
Figure 30. Timing Waveform of Write Cycle(1) (WE# controlled, if
BYTE# is low, ignore UB#/LB# timing)................................. 93
Figure 31. Timing Waveform of Write Cycle(2) (CE1# controlled, if
BYTE# is low, ignore UB#/LB# timing)................................. 94
Figure 32. Timing Waveform of Write Cycle(3) (UB#, LB#
controlled, BYTE# must be high) ......................................... 94
Data Retention Waveforms ............................................................................ 95
Figure 33. CE1# Controlled................................................. 95
Figure 34. CS2 Controlled ................................................... 95
Zero-Power Flash ...............................................................................................75
Figure 10. I
CC1
Current vs. Time (Showing Active and Automatic
Sleep Currents).................................................................. 75
Figure 11. Typical ICC1 vs. Frequency................................... 75
16 Mb SRAM (supplier 1)
Functional Description . . . . . . . . . . . . . . . . . . . . . 96
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 96
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 97
Recommended DC Operating Conditions (Note 1) ............................... 97
Capacitance (f=1MHz, T
A
=25°C) ................................................................... 97
DC Operating Characteristics ....................................................................... 97
Test Conditions ...................................................................................................76
Figure 12. Test Setup ........................................................ 76
Table 14. Test Specifications ............................................... 76
Switching Waveforms ........................................................................................76
Table 15. Key To Switching Waveforms ................................ 76
Figure 13. Input Waveforms and Measurement Levels............. 76
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 77
Read-Only Operations ......................................................................................77
Figure 14. Read Operation Timings ....................................... 77
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 98
Read/Write Charcteristics (V
CC
=2.7-3.3V) ................................................98
Data Retention Characteristics .....................................................................98
Timing Diagrams .................................................................................................99
Figure 35. Timing Waveform of Read Cycle(1) (address controlled,
CD#1=OE#=V
IL
, CS2=WE#=V
IH
, UB# and/or LB#=V
IL
) ........ 99
Figure 36. Timing Waveform of Read Cycle(2) (WE#=V
IH
) ...... 99
Figure 37. Timing Waveform of Write Cycle(1) (WE# controlled)...
100
Figure 38. Timing Waveform of Write Cycle(2) (CS# controlled) ...
100
Figure 39. Timing Waveform of Write Cycle(3) (UB#, LB#
controlled)...................................................................... 101
Figure 40. Data Retention Waveform.................................. 102
Hardware Reset (RESET#) .............................................................................. 78
Figure 15. Reset Timings..................................................... 78
Word/Byte Configuration (BYTE#) ............................................................. 78
Figure 16. BYTE# Timings for Read Operations ...................... 79
Figure 17. BYTE# Timings for Write Operations ...................... 79
Erase and Program Operations ..................................................................... 80
Figure 18. Program Operation Timings .................................. 81
Figure 19. Accelerated Program Timing Diagram .................... 81
Figure 20. Chip/Sector Erase Operation Timings ..................... 82
Figure 21. Back-to-back Read/Write Cycle Timings ................. 82
Figure 22. Data# Polling Timings (During Embedded Algorithms) .
83
Figure 23. Toggle Bit Timings (During Embedded Algorithms) .. 83
Figure 24. DQ2 vs. DQ6 ...................................................... 84
8 Mb pSRAM (supplier 2)
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
General Description . . . . . . . . . . . . . . . . . . . . . . . 103
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Figure 41. Functional Block Diagram .................................. 104
Table 18. Functional Description ........................................ 104
Temporary Sector Unprotect ........................................................................ 84
Figure 25. Temporary Sector Unprotect Timing Diagram.......... 84
Figure 26. Sector/Sector Block Protect and Unprotect Timing
Diagram............................................................................ 85
Alternate CE# Controlled Erase and Program Operations ................. 86
Figure 27. Alternate CE# Controlled Write (Erase/Program)
Operation Timings .............................................................. 87
Erase And Programming Performance . . . . . . . .88
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 88
Absolute Maximum Ratings (See Note) . . . . . . 104
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 105
Operating Characteristics (Over Specified Temperature Range) ......105
8 Mb SRAM (supplier 1)
Functional Description . . . . . . . . . . . . . . . . . . . . . 89
Table 16. Word Mode ......................................................... 89
Table 17. Byte Mode .......................................................... 89
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 105
Table 19. Timing Test Conditions ....................................... 105
Table 20. Timings ............................................................ 106
Timing Diagrams ................................................................................................107
Figure 42. Timing of Read Cycle (CE1# = OE# = V
IL
, WE# = CE2
= V
IH
)............................................................................ 107
Figure 43. Timing Waveform of Read Cycle (WE# = V
IH
) ...... 107
Figure 44. Timing Waveform of Write Cycle (WE# Control) ... 108
Figure 45. Timing Waveform of Write Cycle (CE1# Control)... 108
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 90
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 90
Recommended DC Operating Conditions ................................................ 90
Capacitance (f=1MHz, T
A
=25°C) ................................................................... 90
DC and Operating Characteristics ................................................................ 91
16 Mb pSRAM (supplier 2)
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
General Description . . . . . . . . . . . . . . . . . . . . . . 109
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 46. Functional Block Diagram .................................. 110
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .92
Read/Write Charcteristics (V
CC
=2.7-3.3V) ................................................ 92
Data Retention Characteristics ..................................................................... 92
Timing Diagrams ..................................................................................................93
4
S71JLxxxHxx_00A0 February 24, 2004
A d v a n c e
I n f o r m a t i o n
Table 21. Functional Description .........................................110
Absolute Maximum Ratings (See Note) . . . . . . . 111
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 111
Operating Characteristics (Over Specified Temperature Range) ....... 111
Absolute Maxumum Ratings . . . . . . . . . . . . . . . . 124
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 27. DC Recommended Operating Conditions (T
A
= -40°C to
85°C) ............................................................................. 124
Table 28. DC Characteristics (T
A
= -40°C to 85°C, VDD = 2.6 to
3.3V) ............................................................................. 125
Table 29. Capacitance (T
A
= 25°C, f = 1 MHz) ..................... 125
Table 30. AC Characteristics and Operating Conditions (T
A
= -40°C
to 85°C, V
DD
= 2.6 to 3.3V) .............................................. 125
Table 31. AC Test Conditions ............................................. 126
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 112
Timing Test Conditions .................................................................................... 112
Timings .................................................................................................................. 112
Timings .................................................................................................................. 113
Figure 47. Timing of Read Cycle (CE1# = OE# = V
IL
, WE# = CE2
= V
IH
) ............................................................................ 113
Figure 48. Timing Waveform of Read Cycle (WE# = V
IH
) ....... 113
Figure 49. Timing Waveform of Write Cycle (WE# Control) .... 114
Figure 50. Timing Waveform of Write Cycle (CE1# Control, CE2 =
High).............................................................................. 114
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 125
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 61. Read Cycle ......................................................
Figure 62. Page Read Cycle (8 words access) ......................
Figure 63. Write Cycle 1 (WE# controlled) ..........................
Figure 64. Write Cycle 2 (CE# controlled) ...........................
Figure 65. Deep Power-down Timing ..................................
Figure 66. Power-on Timing ..............................................
Figure 67. Read Address Skew Provisions ...........................
Figure 68. Write Address Skew Provisions ...........................
127
128
129
130
130
130
131
131
16 Mb pSRAM (supplier 4)
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maxumum Ratings (see Note) . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . .
115
115
115
116
116
116
64 Mb pSRAM (supplier 3)
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maxumum Ratings . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . .
132
132
132
133
133
133
Table 22. DC Recommended Operating Conditions ................116
Table 23. DC Characteristics (T
A
= -25°C to 85°C, VDD = 2.6 to
3.3V) ..............................................................................117
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 24. AC Characteristics and Operating Conditions (T
A
= -25°C
to 85°C, V
DD
= 2.6 to 3.3V) ...............................................117
Table 25. AC Test Conditions .............................................118
Figure 51. AC Test Loads................................................... 118
Figure 52. State Diagram .................................................. 119
Table 26. Standby Mode Characteristics ..............................119
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 53. Read Cycle 1—Addressed Controlled ....................
Figure 54. Read Cycle 2—CS1# Controlled ..........................
Figure 55. Write Cycle 1—WE# Controlled ...........................
Figure 56. Write Cycle 2—CS1# Controlled ..........................
Figure 57. Write Cycle3—UB#, LB# Controlled .....................
Figure 58. Deep Power-down Mode.....................................
Figure 59. Power-up Mode.................................................
Figure 60. Abnormal Timing...............................................
119
120
120
121
121
122
122
122
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 32. DC Recommended Operating Conditions (T
A
= -25°C to
85°C) ............................................................................. 133
Table 33. DC Characteristics (T
A
= -25°C to 85°C, VDD = 2.6 to
3.3V) ............................................................................. 134
Table 34. Capacitance (T
A
= 25°C, f = 1 MHz) ..................... 134
Table 35. AC Characteristics and Operating Conditions (T
A
= -25°C
to 85°C, V
DD
= 2.6 to 3.3V) .............................................. 134
Table 36. AC Test Conditions ............................................. 135
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 69. Read Cycle ......................................................
Figure 70. Page Read Cycle (8 words access) ......................
Figure 71. Write Cycle 1 (WE# controlled) ..........................
Figure 72. Write Cycle 2 (CE# controlled) ...........................
Figure 73. Deep Power-down Timing ..................................
Figure 74. Power-on Timing ..............................................
Figure 75. Read Address Skew Provisions ...........................
Figure 76. Write Address Skew Provisions ...........................
136
137
138
139
139
139
140
140
32 Mb pSRAM (Supplier 3)
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . .
123
123
123
124
Revision Summary
February 24, 2004 S71JLxxxHxx_00A0
5
