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S71PL254JC0BFITB4

Memory Circuit, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-84

器件类别:存储    存储   

厂商名称:SPANSION

厂商官网:http://www.spansion.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SPANSION
零件包装代码
BGA
包装说明
LFBGA,
针数
84
Reach Compliance Code
compliant
其他特性
PSEUDO STATIC RAM IS ORGANIZED AS 4M X 16
JESD-30 代码
R-PBGA-B84
JESD-609代码
e1
长度
11.6 mm
内存密度
268435456 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
湿度敏感等级
3
功能数量
1
端子数量
84
字数
16777216 words
字数代码
16000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16MX16
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.4 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN SILVER COPPER
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
宽度
8 mm
文档预览
S71PL254/127/064/032J based MCPs
Stacked Multi-Chip Product (MCP) Flash Memory and RAM
256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only
Simultaneous Operation Page Mode Flash Memory and
64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
RAM/Pseudo Static RAM
ADVANCE
Distinctive Characteristics
MCP Features
Power supply voltage of 2.7 to 3.1 volt
High performance
— 55 ns
— 65 ns (65 ns Flash, 70ns pSRAM)
Packages
— 7 x 9 x 1.2mm 56 ball FBGA
— 8 x 11.6 x 1.2mm 64 ball FBGA
— 8 x 11.6 x 1.4mm 84 ball FBGA
Operating Temperature
— –25°C to +85°C
— –40°C to +85°C
General Description
The S71PL series is a product line of stacked Multi-Chip Product (MCP) packages
and consists of:
One or more S29PL (Simultaneous Read/Write) Flash memory die
pSRAM or SRAM
The 256Mb Flash memory consists of two S29PL127J devices. In this case, CE#f2
is used to access the second Flash and no extra address lines are required.
The products covered by this document are listed in the table below:
Flash Memory Density
32Mb
4Mb
8Mb
pSRAM
Density
16Mb
32Mb
64Mb
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
S71PL064JA0
S71PL064JB0
S71PL127JA0
S71PL127JB0
S71PL127JC0
S71PL254JB0
S71PL254JC0
64Mb
128Mb
256Mb
Flash Memory Density
32Mb
SRAM Density (Note)
4Mb
8Mb
S71PL032J04
S71PL032J08
S71PL064J08
64Mb
Note:
Not recommended for new designs; use pSRAM based MCPs instead.
Publication Number
S71PL254/127/064/032J_00
Revision
A
Amendment
4
Issue Date
July 16, 2004
P r e l i m i n a r y
Product Selector Guide
32Mb Flash Memory
Device-Model#
S71PL032J04-0B
S71PL032J04-0F
S71PL032J08-0B
S71PL032J40-07
S71PL032J80-05
S71PL032J80-07
S71PL032JA0-0K
S71PL032JA0-0F
Flash Access time (ns)
65
65
65
65
55
65
65
65
(p)SRAM density
4M SRAM
4M SRAM
8M SRAM
4M pSRAM
8M pSRAM
8M pSRAM
16Mb pSRAM
16Mb pSRAM
(p)SRAM Access time (ns) pSRAM type
70
70
70
70
55
70
70
70
SRAM2
SRAM3
SRAM2
pSRAM1
pSRAM1
pSRAM1
pSRAM1
pSRAM3
Package
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
64Mb Flash Memory
Device-Model#
S71PL064J08-0B
S71PL064J08-0U
S71PL064J80-0K
S71PL064JA0-05
S71PL064JA0-0K
S71PL064JA0-0P
S71PL064JB0-07
S71PL064JB0-0U
Flash Access time (ns)
65
65
65
55
65
65
65
65
(p)SRAM density
8M SRAM
8M SRAM
8M pSRAM
8M pSRAM
16M pSRAM
16M pSRAM
32M pSRAM
32M pSRAM
(p)SRAM Access time (ns)
70
70
70
55
70
70
70
70
(p)SRAM type
SRAM2
SRAM4
pSRAM1
pSRAM1
pSRAM1
pSRAM7
pSRAM1
pSRAM6
Package
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
TLC056
128Mb Flash Memory
Device-Model#
S71PL127JA0-9P
S71PL127JB0-97
S71PL127JB0-9Z
S71PL127JB0-9U
S71PL127JC0-97
S71PL127JC0-9Z
S71PL127JC0-9U
Flash Access time (ns)
65
65
65
65
65
65
65
pSRAM density
16M pSRAM
32M pSRAM
32M pSRAM
32M pSRAM
64M pSRAM
64M pSRAM
64M pSRAM
pSRAM Access time (ns)
70
70
70
70
70
70
70
pSRAM type
pSRAM7
pSRAM1
pSRAM7
pSRAM6
pSRAM1
pSRAM7
pSRAM6
Package
TLA064
TLA064
TLA064
TLA064
TLA064
TLA064
TLA064
2
S71PL254/127/064/032J based MCPs
S71PL254/127/064/032J_00_A4 July 16, 2004
P r e l i m i n a r y
256Mb Flash Memory (2xS29PL127J)
Device-Model#
S71PL254JB0-T7
S71PL254JB0-TB
S71PL254JB0-TU
S71PL254JC0-TB
S71PL254JC0-TU
S71PL254JC0-TZ
Flash Access time (ns)
65
65
65
65
65
65
pSRAM density
32M pSRAM
32M pSRAM
32M pSRAM
64M pSRAM
64M pSRAM
64M pSRAM
pSRAM Access time (ns)
70
70
70
70
70
70
pSRAM type
pSRAM1
pSRAM2
pSRAM6
pSRAM2
pSRAM6
pSRAM7
Package
FTA084
FTA084
FTA084
FTA084
FTA084
FTA084
July 16, 2004 S71PL254/127/064/032J_00_A4
S71PL254/127/064/032J based MCPs
3
A d v a n c e
I n f o r m a t i o n
S71PL254/127/064/032J based MCPs
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . 1
MCP Features ........................................................................................................ 1
Table 11. PL032J Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................... 48
Selecting a Sector Protection Mode .............................................................48
Table 12. Sector Protection Schemes ................................... 49
General Description . . . . . . . . . . . . . . . . . . . . . . . . 1
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .2
32Mb Flash Memory .............................................................................................2
64Mb Flash Memory .............................................................................................2
128Mb Flash Memory ...........................................................................................2
Persistent Sector Protection . . . . . . . . . . . . . . . . 49
Persistent Protection Bit (PPB) ......................................................................49
Persistent Protection Bit Lock (PPB Lock) .................................................50
Persistent Sector Protection Mode Locking Bit ........................................ 51
Password Protection Mode . . . . . . . . . . . . . . . . . . 51
Password and Password Mode Locking Bit ................................................ 52
64-bit Password .................................................................................................. 52
Write Protect (WP#) ....................................................................................... 53
Persistent Protection Bit Lock ................................................................... 53
High Voltage Sector Protection ..................................................................... 53
Figure 1. In-System Sector Protection/Sector Unprotection
Algorithms........................................................................ 54
Connection Diagram (S71PL032J)
Connection Diagram (S71PL064J)
Connection Diagram (S71PL127J)
Connection Diagram (S71PL254J)
. . . . . . . . . . . . . .8
. . . . . . . . . . . . . .9
. . . . . . . . . . . . . 10
. . . . . . . . . . . . . 11
Special Handling Instructions For FBGA Package .................................. 11
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 13
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 18
TLC056—56-ball Fine-Pitch Ball Grid Array (FBGA)
9 x 7mm Package ................................................................................................. 18
TLA064—64-ball Fine-Pitch Ball Grid Array (FBGA)
8 x 11.6mm Package ............................................................................................. 19
FTA084—84-ball Fine-Pitch Ball Grid Array (FBGA)
8 x 11.6mm ............................................................................................................ 20
Temporary Sector Unprotect ........................................................................ 55
Figure 2. Temporary Sector Unprotect Operation ................... 55
SecSi™ (Secured Silicon) Sector Flash Memory Region .......................... 55
Factory-Locked Area (64 words) .............................................................. 55
Customer-Lockable Area (64 words) ...................................................... 56
SecSi Sector Protection Bits ....................................................................... 56
Figure 3. SecSi Sector Protect Verify .................................... 57
S29PL127J/S29PL064J/S29PL032J for MCP
General Description . . . . . . . . . . . . . . . . . . . . . . . 23
Simultaneous Read/Write Operation with Zero Latency ......................23
Page Mode Features ...........................................................................................23
Standard Flash Memory Features ...................................................................23
Hardware Data Protection ............................................................................. 57
Low VCC Write Inhibit ................................................................................ 57
Write Pulse “Glitch” Protection ............................................................... 57
Logical Inhibit ................................................................................................... 57
Power-Up Write Inhibit ............................................................................... 57
Common Flash Memory Interface (CFI) . . . . . . 58
Table 13. CFI Query Identification String .............................. 58
Table 14. System Interface String ........................................ 59
Table 15. Device Geometry Definition ................................... 59
Table 16. Primary Vendor-Specific Extended Query ................ 60
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 25
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Simultaneous Read/Write Block Diagram . . . . . 27
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .29
Table 1. PL127J Device Bus Operations ................................ 29
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 62
Reading Array Data ...........................................................................................62
Reset Command .................................................................................................62
Autoselect Command Sequence .................................................................... 63
Enter SecSi™ Sector/Exit SecSi Sector Command Sequence ................ 63
Word Program Command Sequence ........................................................... 63
Unlock Bypass Command Sequence ........................................................64
Figure 4. Program Operation ............................................... 65
Requirements for Reading Array Data ........................................................ 29
Random Read (Non-Page Read) ............................................................... 29
Page Mode Read ............................................................................................. 30
Table 2. Page Select .......................................................... 30
Chip Erase Command Sequence ................................................................... 65
Sector Erase Command Sequence ................................................................66
Figure 5. Erase Operation ................................................... 67
Simultaneous Read/Write Operation .......................................................... 30
Table 3. Bank Select .......................................................... 30
Writing Commands/Command Sequences ..................................................31
Accelerated Program Operation ................................................................31
Autoselect Functions ......................................................................................31
Automatic Sleep Mode ......................................................................................32
RESET#: Hardware Reset Pin .........................................................................32
Output Disable Mode ........................................................................................32
Table 4. PL127J Sector Architecture ..................................... 33
Table 5. PL064J Sector Architecture ..................................... 40
Table 6. PL032J Sector Architecture ..................................... 43
Table 7. SecSiTM Sector Addresses ...................................... 44
Autoselect Mode .................................................................................................45
Table 8. Autoselect Codes (High Voltage Method) .................. 45
Table 9. PL127J Boot Sector/Sector Block Addresses for
Protection/Unprotection ..................................................... 46
Table 10. PL064J Boot Sector/Sector Block Addresses for
Protection/Unprotection ..................................................... 47
Erase Suspend/Erase Resume Commands .................................................. 67
Password Program Command .......................................................................68
Password Verify Command .............................................................................68
Password Protection Mode Locking Bit Program Command ..............68
Persistent Sector Protection Mode Locking Bit Program
Command .............................................................................................................69
SecSi Sector Protection Bit Program Command ......................................69
PPB Lock Bit Set Command ............................................................................69
DYB Write Command ......................................................................................69
Password Unlock Command ..........................................................................69
PPB Program Command ..................................................................................70
All PPB Erase Command ..................................................................................70
DYB Write Command ......................................................................................70
PPB Lock Bit Set Command ............................................................................70
Command .............................................................................................................. 71
Command Definitions Tables .......................................................................... 71
Table 17. Memory Array Command Definitions ...................... 71
July 16, 2004 S71PL254/127/064/032J_00A3
3
A d v a n c e
I n f o r m a t i o n
Table 18. Sector Protection Command Definitions .................. 72
Write Operation Status . . . . . . . . . . . . . . . . . . . . 73
DQ7: Data# Polling ............................................................................................73
Figure 6. Data# Polling Algorithm......................................... 74
Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . . 98
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Power Up ..............................................................................................................99
Figure 23. Power Up 1 (CS1# Controlled) ............................. 99
Figure 24. Power Up 2 (CS2 Controlled)................................ 99
DQ6: Toggle Bit I ................................................................................................75
Figure 7. Toggle Bit Algorithm.............................................. 76
DQ2: Toggle Bit II ...............................................................................................76
Reading Toggle Bits DQ6/DQ2 ......................................................................76
DQ5: Exceeded Timing Limits ........................................................................77
DQ3: Sector Erase Timer .................................................................................77
Table 19. Write Operation Status ......................................... 78
Functional Description . . . . . . . . . . . . . . . . . . . . . 99
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 100
DC Recommended Operating Conditions . . . . . 100
Capacitance (Ta = 25°C, f = 1 MHz) . . . . . . . . . . 100
DC and Operating Characteristics . . . . . . . . . . . 100
Common ............................................................................................................. 100
16M pSRAM ...........................................................................................................101
32M pSRAM ..........................................................................................................101
64M pSRAM .........................................................................................................102
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .79
Figure 8. Maximum Overshoot Waveforms............................. 79
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .80
Industrial (I) Devices ......................................................................................... 80
Extended (E) Devices ........................................................................................ 80
Supply Voltages ................................................................................................... 80
AC Operating Conditions . . . . . . . . . . . . . . . . . . 102
Test Conditions (Test Load and Test Input/Output Reference) ........102
Figure 25. Output Load .................................................... 102
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 20. CMOS Compatible ................................................ 81
AC Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . .82
Test Conditions .................................................................................................. 82
Figure 9. Test Setups......................................................... 82
Table 21. Test Specifications ............................................... 82
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 104
Read Timings .......................................................................................................104
Figure 26. Timing Waveform of Read Cycle(1) ..................... 104
Figure 27. Timing Waveform of Read Cycle(2) ..................... 104
Figure 28. Timing Waveform of Read Cycle(2) ..................... 104
ACC Characteristics (Ta = -40°C to 85°C, V
CC
= 2.7 to 3.1 V) ........103
SWITCHING WAVEFORMS ..........................................................................83
Table 22. KEY TO SWITCHING WAVEFORMS ......................... 83
Figure 10. Input Waveforms and Measurement Levels............. 83
Write Timings .....................................................................................................105
Figure 29. Write Cycle #1 (WE# Controlled)........................
Figure 30. Write Cycle #2 (CS1# Controlled) ......................
Figure 31. Timing Waveform of Write Cycle(3) (CS2
Controlled) .....................................................................
Figure 32. Timing Waveform of Write Cycle(4) (UB#, LB#
Controlled) .....................................................................
105
105
106
106
VCC RampRate ...................................................................................................83
Read Operations ................................................................................................ 84
Table 23. Read-Only Operations .......................................... 84
Figure 11. Read Operation Timings ....................................... 84
Figure 12. Page Read Operation Timings ............................... 85
Reset ...................................................................................................................... 85
Table 24. Hardware Reset (RESET#) .................................... 85
Figure 13. Reset Timings..................................................... 86
Erase/Program Operations ............................................................................. 87
Table 25. Erase and Program Operations .............................. 87
Timing Diagrams ................................................................................................. 88
Figure 14. Program Operation Timings .................................. 88
Figure 15. Accelerated Program Timing Diagram .................... 88
Figure 16. Chip/Sector Erase Operation Timings ..................... 89
Figure 17. Back-to-back Read/Write Cycle Timings ................. 89
Figure 18. Data# Polling Timings (During Embedded
Algorithms) ....................................................................... 90
Figure 19. Toggle Bit Timings (During Embedded Algorithms) .. 90
Figure 20. DQ2 vs. DQ6 ...................................................... 91
pSRAM Type 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Absolute Maximum Ratings (see Note) . . . . . . . 108
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 30. DC Recommended Operating Conditions ............... 108
Table 31. DC Characteristics (T
A
= -25°C to 85°C, VDD
= 2.6 to 3.3V) ................................................................. 109
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 32. AC Characteristics and Operating Conditions
(T
A
= -25°C to 85°C, V
DD
= 2.6 to 3.3V) ............................. 109
Table 33. AC Test Conditions ............................................. 110
Figure 33. AC Test Loads .................................................. 110
Figure 34. State Diagram ................................................. 111
Table 34. Standby Mode Characteristics .............................. 111
Protect/Unprotect . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 26. Temporary Sector Unprotect ................................. 91
Figure 21. Temporary Sector Unprotect Timing Diagram.......... 91
Figure 22. Sector/Sector Block Protect and Unprotect Timing
Diagram............................................................................ 92
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 35. Read Cycle 1—Addressed Controlled ...................
Figure 36. Read Cycle 2—CS1# Controlled..........................
Figure 37. Write Cycle 1—WE# Controlled ..........................
Figure 38. Write Cycle 2—CS1# Controlled .........................
Figure 39. Write Cycle3—UB#, LB# Controlled ....................
Figure 40. Deep Power-down Mode ....................................
Figure 41. Power-up Mode ................................................
Figure 42. Abnormal Timing ..............................................
111
112
112
113
113
114
114
114
Controlled Erase Operations ..........................................................................93
Table 27. Alternate CE# Controlled Erase and Program
Operations ....................................................................... 93
Table 28. Alternate CE# Controlled Write (Erase/Program)
Operation Timings ............................................................. 94
Table 29. Erase And Programming Performance .................... 95
BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . 95
Type 2 pSRAM
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Product Information . . . . . . . . . . . . . . . . . . . . . . . 97
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
4
pSRAM Type 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
S71PL254/127/064/032J_00A3 July 16, 2004
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