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S71WS256ND0BFIE70

Memory Circuit, Flash+PSRAM, CMOS, PBGA84

器件类别:存储    存储   

厂商名称:AMD(超微)

厂商官网:http://www.amd.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
AMD(超微)
包装说明
FBGA, BGA84,10X12,32
Reach Compliance Code
compliant
最长访问时间
70 ns
JESD-30 代码
R-PBGA-B84
内存集成电路类型
MEMORY CIRCUIT
混合内存类型
FLASH+PSRAM
端子数量
84
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
FBGA
封装等效代码
BGA84,10X12,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, FINE PITCH
电源
1.8 V
认证状态
Not Qualified
最大待机电流
0.00004 A
最大压摆率
0.066 mA
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
文档预览
S71WS512Nx0/S71WS256Nx0 Based MCPs
Stacked Multi-chip Product (MCP)
256/512 Megabit (32M/16M x 16 bit) CMOS
1.8 Volt-only Simultaneous Read/Write,
Burst-mode Flash Memory with
128 Megabit (8M x 16-Bit) pSRAM Type 4
ADVANCE
INFORMATION
Distinctive Characteristics
MCP Features
Power supply voltage of 1.7 to 1.95V
Burst Speed: 54MHz
Packages: 8 x 11.6 mm, 9 x 12 mm
Operating Temperature
-25°C to +85°C
-40°C to +85°C
General Description
The S71WS Series is a product line of stacked Multi-chip Product (MCP) packages
and consists of
One or more flash memory die
pSRAM Type 4—Compatible pSRAM
The products covered by this document are listed in the table below. For details
about their specifications, please refer to the individual constituent datasheet for
further details.
Flash Density
512Mb
pSRAM Density
128Mb
64Mb
32Mb
16Mb
S71WS512ND0
256Mb
S71WS256ND0
128Mb
64Mb
Publication Number
S71WS512/256Nx0_UT
Revision
A
Amendment
0
Issue Date
November 8, 2004
A d v a n c e
I n f o r m a t i o n
S71WS512Nx0/S71WS256Nx0 Based MCPs
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . 1
MCP Features ................................................................................................... 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 1
bProduct Selector Guide . . . . . . . . . . . . . . . . . . . . .5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . .6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .7
Type 4 - based Pinout ..........................................................................................7
MCP Look-ahead Connection Diagram .........................................................8
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . .9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 10
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . 11
256Mb - WS256N Flash + 128 pSRAM .......................................................... 11
2x256Mb—WS256N Flash + 128Mb pSRAM ............................................... 11
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 12
FEA084—84-ball Fine-Pitch Ball Grid Array (FBGA) 12.0 x 9.0 mm MCP
Compatible Package ........................................................................................... 12
TSD084—84-ball Fine-Pitch Ball Grid Array (FBGA) 12.0 x 9.0 mm MCP
Compatible Package ............................................................................................13
TLA084—84-ball Fine-Pitch Ball Grid Array (FBGA) 11.6x8.0x1.2 mm
MCP Compatible Package ................................................................................14
S29WSxxxN MirrorBit™ Flash Family
General Description . . . . . . . . . . . . . . . . . . . . . . . 15
Application Notes ........................................................................................... 18
Specification Bulletins .................................................................................... 18
Drivers and Software Support .................................................................... 18
CAD Modeling Support ................................................................................ 18
Technical Support ........................................................................................... 18
Spansion LLC Locations ........................................................ 18
Table 4.2. S29WS128N Sector & Memory Address Map .......... 20
Table 4.3. S29WS064N Sector & Memory Address Map .......... 21
Table 5.4. Device Operations .............................................. 22
Table 5.7. Address Latency for 5 Wait States (≤ 68 MHz) ........ 24
Table 5.8. Address Latency for 4 Wait States (≤ 54 MHz) ........ 25
Table 5.9. Address Latency for 3 Wait States (≤ 40 MHz) ........ 25
Table 5.10. Address/Boundary Crossing Latency for 6 Wait States
(≤ 80 MHz) ....................................................................... 25
Table 5.11. Address/Boundary Crossing Latency for 5 Wait States
(≤ 68 MHz) ....................................................................... 25
Table 5.12. Address/Boundary Crossing Latency for 4 Wait States
(≤ 54 MHz) ....................................................................... 25
Table 5.13. Address/Boundary Crossing Latency for 3 Wait States
(≤ 40 MHz) ....................................................................... 25
Figure 5.2. Synchronous Read ............................................. 26
Table 5.14. Burst Address Groups ....................................... 27
Table 5.15. Configuration Register ....................................... 28
Table 5.16. Autoselect Addresses ........................................ 29
Table 5.17. Autoselect Entry ............................................... 29
Table 5.18. Autoselect Exit ................................................. 30
Figure 5.19. Single Word Program ........................................ 32
Table 5.20. Single Word Program ........................................ 33
Table 5.21. Write Buffer Program ........................................ 35
Figure 5.22. Write Buffer Programming Operation .................. 36
Table 5.23. Sector Erase .................................................... 38
Figure 5.24. Sector Erase Operation ..................................... 39
Table 5.25. Chip Erase ....................................................... 40
Table 5.26. Erase Suspend ................................................. 41
Table 5.27. Erase Resume .................................................. 41
Table 5.28. Program Suspend ............................................. 42
Table 5.29. Program Resume .............................................. 42
Table 5.30. Unlock Bypass Entry .......................................... 43
Table 5.31. Unlock Bypass Program ..................................... 44
Table 5.32. Unlock Bypass Reset ......................................... 44
Figure 5.33. Write Operation Status Flowchart....................... 46
Table 5.34. DQ6 and DQ2 Indications ................................... 48
Table 5.35. Write Operation Status ...................................... 49
Table 5.36. Reset .............................................................. 51
Figure 6.2. Lock Register Program Algorithm......................... 57
Table 8.2. SecSi Sector Entry .............................................. 63
Table 8.3. SecSi Sector Program .......................................... 64
Table 8.4. SecSi Sector Entry .............................................. 64
Figure 9.2. Maximum Positive Overshoot Waveform ............... 65
Figure 9.3. Test Setup........................................................ 66
Figure 9.4. Input Waveforms and Measurement Levels ........... 67
Figure 9.5. V
CC
Power-up Diagram....................................... 67
Figure 9.6. CLK Characterization.......................................... 69
Figure 9.7. CLK Synchronous Burst Mode Read...................... 71
Figure 9.8. 8-word Linear Burst with Wrap Around................. 72
Figure 9.9. 8-word Linear Burst without Wrap Around ............ 72
Figure 9.10. Linear Burst with RDY Set One Cycle Before Data 73
Figure 9.11. Asynchronous Mode Read ................................. 74
Figure 9.12. Reset Timings ................................................. 75
Figure 9.2. Chip/Sector Erase Operation Timings: WE# Latched
Addresses......................................................................... 77
Figure 9.13. Asynchronous Program Operation Timings: WE#
Latched Addresses............................................................. 78
Figure 9.14. Synchronous Program Operation Timings:
CLK Latched Addresses ...................................................... 79
Figure 9.15. Accelerated Unlock Bypass Programming Timing.. 80
Figure 9.16. Data# Polling Timings
(During Embedded Algorithm)............................................. 80
Figure 9.17. Toggle Bit Timings (During Embedded Algorithm) 81
Figure 9.18. Synchronous Data Polling
Timings/Toggle Bit Timings ................................................. 81
Figure 9.19. DQ2 vs. DQ6................................................... 82
Figure 9.20. Latency with Boundary Crossing when
Frequency > 66 MHz.......................................................... 82
Figure 9.21. Latency with Boundary Crossing into Program/
Erase Bank ....................................................................... 83
Figure 9.22. Example of Wait States Insertion ....................... 84
Figure 9.23. Back-to-Back Read/Write Cycle Timings.............. 85
Table 10.2. Sector Protection Commands .............................. 90
Table 10.3. CFI Query Identification String ............................ 91
Table 10.4. System Interface String ..................................... 92
Table 10.5. Device Geometry Definition ................................ 92
Table 10.6. Primary Vendor-Specific Extended Query ............. 93
pSRAM Type 4
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Power Up Sequence . . . . . . . . . . . . . . . . . . . . . . . 99
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . 100
Power Up ............................................................................................................ 100
Figure 11.24. Power Up Timing.......................................... 100
Standby Mode .................................................................................................... 100
Figure 11.25. Standby Mode State Machines ....................... 100
Functional Description . . . . . . . . . . . . . . . . . . . . . 101
Table 11.7. Asynchronous 4 Page Read & Asynchronous Write Mode
(A15/A14=0/0) ............................................................... 101
Table 11.8. Synchronous Burst Read & Asynchronous Write Mode
(A15/A14=0/1) ............................................................... 102
Table 11.9. Synchronous Burst Read & Synchronous Burst Write
Mode(A15/A14=1/0) ........................................................ 103
Mode Register Setting Operation . . . . . . . . . . . . 103
2
November 8, 2004 S71WS512/256Nx0_UTA0
S71WS512Nx0/S71WS256Nx0
A d v a n c e
I n f o r m a t i o n
Mode Register Set (MRS) ...............................................................................104
Table 11.10. Mode Register Setting According to
Field of Function ...............................................................104
Table 11.11. Mode Register Set ..........................................104
Figure 11.39. Timing Waveform Of Write Cycle (Address Latch
Type)............................................................................. 121
Table 11.21. Asynchronous Write in Synchronous Mode AC
Characteristics ................................................................ 121
MRS Pin Control Type Mode Register Setting Timing .......................... 105
Figure 11.26. Mode Register Setting Timing (OE# = V
IH
) ...... 106
Table 11.12. MRS AC Characteristics ...................................106
Asynchronous Write Timing Waveform in Synchronous Mode ........122
Write Cycle (Low ADV# Type) ...............................................................122
Figure 11.40. Timing Waveform Of Write
Cycle (Low ADV# Type).................................................... 122
Table 11.22. Asynchronous Write in Synchronous Mode AC
Characteristics ................................................................ 122
Asynchronous Operation . . . . . . . . . . . . . . . . . . 107
Asynchronous 4 Page Read Operation ...................................................... 107
Asynchronous Write Operation .................................................................. 107
Asynchronous Write Operation in Synchronous Mode ....................... 107
Figure 11.27. Asynchronous 4-Page Read............................ 107
Figure 11.28. Asynchronous Write ...................................... 107
Write Cycle (Low ADV# Type) ...............................................................123
Figure 11.41. Timing Waveform Of Write Cycle
(Low ADV# Type) ............................................................ 123
Table 11.23. Asynchronous Write in Synchronous Mode AC
Characteristics ................................................................ 123
Synchronous Burst Operation . . . . . . . . . . . . . . 108
Synchronous Burst Read Operation ...........................................................108
Synchronous Burst Write Operation .........................................................108
Figure 11.29. Synchronous Burst Read................................ 108
Figure 11.30. Synchronous Burst Write ............................... 109
Multiple Write Cycle (Low ADV# Type) ..............................................124
Figure 11.42. Timing Waveform Of Multiple Write Cycle (Low ADV#
Type)............................................................................. 124
Table 11.24. Asynchronous Write in Synchronous Mode AC
Characteristics ................................................................ 125
Synchronous Burst Operation Terminology . . 109
Clock (CLK) ........................................................................................................109
Latency Count ....................................................................................................109
Table 11.13. Latency Count Support ...................................109
Table 11.14. Number of CLocks for 1st Data ........................109
Figure 11.31. Latency Configuration (Read) ......................... 110
AC Operating Conditions . . . . . . . . . . . . . . . . . . 126
Test Conditions (Test Load and Test Input/Output Reference) ........126
Figure 11.43. AC Output Load Circuit ................................. 126
Table 11.25. Synchronous AC Characteristics ..................... 127
Burst Length ........................................................................................................110
Burst Stop .............................................................................................................110
Synchronous Burst Operation
Timing Waveform . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 11.44. Timing Waveform Of Basic Burst Operation ..... 128
Table 11.26. Burst Operation AC Characteristics .................. 128
Synchronous Burst Operation Terminology . . . 110
Wait Control (WAIT#) ...................................................................................110
Figure 11.32. WAIT# and Read/Write Latency Control........... 111
Synchronous Burst Read Timing Waveform . . . 129
Read Timings .......................................................................................................129
Figure 11.45. Timing Waveform of Burst Read Cycle (1) ....... 129
Table 11.27. Burst Read AC Characteristics ......................... 130
Figure 11.46. Timing Waveform of Burst Read Cycle (2) ....... 130
Table 11.28. Burst Read AC Characteristics ......................... 131
Figure 11.47. Timing Waveform of Burst Read Cycle (3) ....... 131
Table 11.29. Burst Read AC Characteristics ......................... 132
Burst Type ............................................................................................................. 111
Table 11.15. Burst Sequence .............................................111
Low Power Features . . . . . . . . . . . . . . . . . . . . . . 112
Internal TCSR ...................................................................................................... 112
Figure 11.33. PAR Mode Execution and Exit ......................... 112
Table 11.16. PAR Mode Characteristics ................................112
Driver Strength Optimization ........................................................................ 112
Partial Array Refresh (PAR) mode ............................................................... 112
Write Timings ..................................................................................................... 133
Figure 11.48. Timing Waveform of Burst Write Cycle (1)....... 133
Table 11.30. Burst Write AC Characteristics ........................ 134
Figure 11.49. Timing Waveform of Burst Write Cycle (2)....... 135
Table 11.31. Burst Write AC Characteristics ........................ 135
Absolute Maximum Ratings . . . . . . . . . . . . . . . . .
DC Recommended Operating Conditions . . . . .
Capacitance (Ta = 25°C, f = 1 MHz) . . . . . . . . . .
DC and Operating Characteristics . . . . . . . . . . .
113
113
113
114
Common ............................................................................................................... 114
Synchronous Burst Read Stop
Timing Waveform . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 11.50. Timing Waveform of Burst Read Stop by CS#.. 136
Table 11.32. Burst Read Stop AC Characteristics ................. 136
AC Operating Conditions . . . . . . . . . . . . . . . . . . 115
Test Conditions (Test Load and Test Input/Output Reference) ........ 115
Figure 11.34. Output Load................................................. 115
Asynchronous AC Characteristics ............................................................... 116
Synchronous Burst Write Stop
Timing Waveform . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 11.51. Timing Waveform of Burst Write Stop by CS#.. 137
Table 11.33. Burst Write Stop AC Characteristics ................. 137
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 117
Asynchronous Read Timing Waveform ...................................................... 117
Figure 11.35. Timing Waveform Of Asynchronous Read Cycle 117
Table 11.17. Asynchronous Read AC Characteristics .............117
Synchronous Burst Read Suspend Timing
Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 11.52. Timing Waveform of Burst
Read Suspend Cycle (1) ................................................... 138
Table 11.34. Burst Read Suspend AC Characteristics ............ 138
Page Read .........................................................................................................118
Figure 11.36. Timing Waveform Of Page Read Cycle ............. 118
Table 11.18. Asynchronous Page Read AC Characteristics ......118
Asynchronous Write Timing Waveform .................................................... 119
Figure 11.37. Timing Waveform Of Write Cycle .................... 119
Table 11.19. Asynchronous Write AC Characteristics .............119
Transition Timing Waveform Between Read And
Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Figure 11.53. Synchronous Burst Read to Asynchronous Write
(Address Latch Type) ....................................................... 139
Table 11.35. Burst Read to Asynchronous Write (Address Latch
Type) AC Characteristics ................................................... 139
Figure 11.54. Synchronous Burst Read to Asynchronous Write (Low
ADV# Type).................................................................... 140
Table 11.36. Burst Read to Asynchronous Write (Low ADV# Type)
Write Cycle 2 ................................................................................................120
Figure 11.38. Timing Waveform of Write Cycle(2)................. 120
Table 11.20. Asynchronous Write AC Characteristics (UB# & LB#
Controlled) ......................................................................120
Write Cycle (Address Latch Type) .......................................................... 121
3
S71WS512Nx0/S71WS256Nx0
S71WS512/256Nx0_UTA0 November 8, 2004
A d v a n c e
I n f o r m a t i o n
AC Characteristics ............................................................140
Figure 11.55. Asynchronous Write (Address Latch Type) to
Synchronous Burst Read Timing......................................... 141
Table 11.37. Asynchronous Write (Address Latch Type) to Burst
Read AC Characteristics ....................................................141
Figure 11.56. Asynchronous Write (Low ADV# Type) to
Synchronous Burst Read Timing......................................... 142
Table 11.38. Asynchronous Write (Low ADV# Type) to Burst Read
AC Characteristics ............................................................142
Figure 11.57. Synchronous Burst Read to Synchronous Burst Write
Timing ........................................................................... 143
Table 11.39. Asynchronous Write (Low ADV# Type) to Burst Read
AC Characteristics ............................................................ 143
Figure 11.58. Synchronous Burst Write to Synchronous Burst Read
Timing ........................................................................... 144
Table 11.40. Asynchronous Write (Low ADV# Type) to Burst Read
AC Characteristics ............................................................ 144
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 146
November 8, 2004 S71WS512/256Nx0_UTA0
S71WS512Nx0/S71WS256Nx0
4
Product Selector Guide
WS256N + 128 pSRAM
Device-Model
S71WS256ND0-E3
S71WS256ND0-E7
pSRAM
density
128M
Flash Speed
pSRAM
MHz
speed MHz
54
54
DYB Bits - Power Up
0 (Protected)
1 (Unprotected [Default state])
Supplier
Type 4
Package
TSD084
9x12x1.2
WS512N + 128 pSRAM
pSRAM
density
128Mb
Flash Speed
MHz
54
pSRAM
speed
MHz
54
Device-Model
S71WS512ND0-Y3
S71WS512ND0-Y7
DYB Bits - Power Up
0
1
Supplier
1.8V RAM
Type 4
Package
FEA084
9x12x1.4
November 8, 2004 S71WS512/256Nx0_UT
S71WS512Nx0/S71WS256Nx0
5
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