桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
S8050
■
FEATURES
特點
Low Frequency Power Amplifier
½頻功率放大
Suitable for Driver Stage of Small Motor
小馬達驅動
Complementary to S8550
与
S8550
互补
■
最大額定值(T
a
=25
℃
)
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collect-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current
集電極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
P
C
T
j
T
stg
Rating
額定值
40
25
5.0
500
225
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mW
℃
℃
■
DEVICE
MARKING
打標
S8050=J3Y
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
S8050
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25
℃
)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
H
FE
(1)
H
FE
(2)
V
CE(sat)
Test Condition
測試條件
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
I
C
=100μA
I
C
=10mA
I
E
=100μA
V
CE
=1V,
I
C
=100mA
V
CE
=1V,
Ic=500mA
I
C
=500mA,
I
B
=50mA
I
C
=500mA,
I
B
=50mA
V
CE
=1V,
I
C
=10mA
V
CE
=5V,
I
C
=10mA
V
CB
=10V,I
E
=0,
f=1MHz
Min.
Typ.
Max. Unit
最小值 典型值 最大值 單½
—
—
0.1
μA
μA
V
—
—
0.1
—
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
40
—
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
25
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
5
—
—
V
85
—
400
—
40
—
—
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
Base
-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
—
—
0.6
V
V
BE(sat)
—
—
1.2
V
V
BE
f
T
—
0.8
1.0
V
100
120
—
MHz
C
ob
—
13
30
pF
