UNISONIC TECHNOLOGIES CO., LTD
S8050
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
1
TO-92
NPN SILICON TRANSISTOR
The UTC
S8050
is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
FEATURES
* Collector current up to 700mA
* Collector-Emitter voltage up to 20 V
* Complementary to S8550
ORDERING INFORMATION
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
Order Number
Package
Lead Free Plating
Halogen Free
S8050L-x-T92-B
S8050G-x-T92-B
TO-92
S8050L-x-T92-K
S8050G-x-T92-K
TO-92
Note: Pin Assignment: E: Emitter
B: Base
C: Collector
MARKING INFORMATION
PACKAGE
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
700
mA
Collector Dissipation(T
A
=25°C)
P
C
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
MIN
30
20
5
TYP
MAX
UNIT
V
V
V
μA
nA
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100A, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=100μA, Ic=0
Collector Cut-Off Current
I
CBO
V
CB
=30V, I
E
=0
Emitter Cut-Off Current
I
EBO
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=1mA
h
FE1
DC Current Gain
h
FE2
V
CE
=1V, I
C
=150 mA
h
FE3
V
CE
=1V, I
C
=500mA
Collector-Emitter Saturation Voltage
V
CE(SAT
) I
C
=500mA, I
B
=50mA
Base-Emitter Saturation Voltage
V
BE(SAT
) I
C
=500mA, I
B
=50mA
Base-Emitter Saturation Voltage
V
BE
V
CE
=1V, I
C
=10mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=50mA
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
1
100
100
120
40
400
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
0.5
Collector Current, Ic (mA)
0.4
0.3
0.2
0.1
0
Static Characteristics
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
I
B
=1.5mA
I
B
=1.0mA
I
B
=0.5mA
DC current Gain, h
FE
10
3
DC Current Gain
V
CE
=1V
10
2
10
1
0
0.4
0.8 1.2
1.6 2.0
Collector-Emitter Voltage, V
CE
( V)
Base-Emitter on Voltage
10
0 -1
10
10
0
10
1
10
2
10
3
Collector Current, Ic (mA)
Saturation Voltage
10
2
Collector Current, Ic (mA)
Saturation Voltage (mV)
V
CE
=1V
10
1
10
4
Ic=10*I
B
V
BE(SAT)
10
3
10
0
10
2
V
CE(SAT)
10
1 -1
10
10
0
10
1
10
2
10
3
10
-1
0
0.2
0.4
0.6
0.8
1.0
Base-Emitter Voltage, V
BE
(V)
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product, f
T
(MHz)
Collector Current, Ic (mA)
Collector Output Capacitance
10
Capacitance, C
ob
(pF)
3
10
3
V
CE
=10V
10
2
10
2
f=1MHz
I
E
=0
10
1
10
1
10
0 0
10
10
1
10
2
10
3
Collector Current, Ic (mA)
10
0 0
10
10
1
10
2
10
3
Collector-Base Voltage (V)
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www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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