Radiation Hardened
Synchronous Burst SRAM
SB036SB
High density 36Mb Synchronous
Burst SRAM manufactured with
HARDSIL
®
technology featuring
extremely low operational and
standby power, latch-up immunity
and on-chip EDAC with write-back.
KEY FEATURES
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Manufactured with HARDSIL
®
technology
Operates as single-port synchronous 36Mbit SRAM memory,
user configurable as:
•
4096K x 9 or 8 data bits with 1 parity bit
•
2048K x 18 or 16 data bits with 2 parity bits
•
1024K x 36 or 32 data bits with 4 parity bits
CMOS compatible input and output level, three state bi-
directional data bus
Operating voltages
•
Core 1.5V, IO 3.3V
Clock rate 75MHz
Standard ADSPn and ADSCn address strobes
•
Low latency 2 cycle read access
•
Global or byte write control
Internal Error detection and correction (EDAC)
•
Single bit error detection and correction on read
access
•
Optional background scrubbing
Optional parity generation / checking
JTAG interface for board level interconnect checking
Ultra low standby current < 600uA typical @ 25C
Temperature range -55C to 125C
Package
•
160 pin ceramic QFP
•
Die available
RADIATION HARDENED PERFORMANCE
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TID > 300K rad (Si)
Soft Error Rate (SER) with EDAC disabled 1.3e-7 errors / bit-day
Soft Error Rate (SER) with EDAC enabled < 1e-15 errors / bit-day
Latch-up immunity > LET = 110 MeV-cm2 / mg (T=125C)
APPLICATIONS
Industrial
Aerospace
Medical
Space
Military
For more information, contact below or visit our web site at
www.voragotech.com
VORAGO Technologies | 1501 S MoPac Expressway, Suite 350, Austin, Texas, 78746 | info@voragotech.com
Rev 1.0
