SB 120T
SCHOTTKY DIE SPECIFICATION
General Description: 20 V 1 A ( Standard
□Low)
VF，
ELECTRICAL CHARACTERISTICS
SYM
DC Blocking Voltage:
Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
IFAV
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 1 Amperes, Ta=25℃
VF MAX
Maximum Instantaneous Reverse Voltage
VR= 23 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
TYPE: SB120T
( Single
□Dual)
Anode
Spec. Limit
20
1
0.450
0.420
Die Sort
25
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.100
0.050
mA
pF
32
125
-50 to +150
Amp
℃
℃
Specification apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
B
Top-side Metal
S
i
O
2
Passivation
A
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
μm
838
750
203
254
Mil
32.99
29.52
8.00
10.00
PS:
(1)Cutting street width is around 16μm (0.62mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
P+ Guard Ring
Back-side Metal
C
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