RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction
Bipolar Transistor MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance up to
5GHz with excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher suppres-
sion of intermodulation products. Only a single positive supply voltage, DC-
blocking capacitors, a bias resistor, and an optional RF choke are required
Optimum Technology
for operation.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
dB
Features
IP3=33.5dBm at 1950MHz
P
OUT
=12.3dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Applications
Gain and Return Loss vs Frequency
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
3
Frequency (GHz)
4
5
6
S21
s22
IF Amplifier
Wireless Data, Satellite
Terminals
s11
Parameter
Small Signal Gain
Min.
13.3
12.7
Specification
Typ.
Max.
Unit
Condition
14.8
16.3
dB
850MHz
14.2
15.7
dB
1950MHz
Output Power at 1dB Compression
19.1
dBm
850MHz
17.5
19.0
dBm
1950MHz
Output Third Order Intercept Point
36.5
dBm
850MHz
31.5
33.5
dBm
1950MHz
Output Power
12.3
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
5000
MHz
Return Loss>10dB
Input Return Loss
14.0
21.0
dB
1950MHz
Output Return Loss
14.0
20.5
dB
1950MHz
Noise Figure
4.8
5.8
dB
1950MHz
Device Operating Voltage
4.6
5.0
5.4
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
102
°C/W
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
