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SBA-5089

Wide Band Low Power Amplifier, 0MHz Min, 5000MHz Max, 1 Func, GAAS, SOT-89, 4 PIN

器件类别：无线/射频/通信    射频和微波   

厂商名称：Qorvo

厂商官网：https://www.qorvo.com

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属性值
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Qorvo
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TO-243
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SBA5089Z
SBA5089Z
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
Gain & Return Loss
30
20
10
0
-10
-20
S11
S22
S21
Features
IP3=34.0dBm at 1950MHz
P
OUT
=13.0dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Applications
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-40
0
1
2
3
Frequency (GHz)
4
5
6
IF Amplifier
Wireless Data, Satellite
Terminals
-30
Parameter
Small Signal Gain
Min.
18.5
16.5
Specification
Typ.
Max.
Unit
Condition
20.0
21.5
dB
850MHz
18.0
19.5
dB
1950MHz
Output Power at 1dB Compression
19.7
dBm
850MHz
18.0
19.5
dBm
1950MHz
Output Third Order Intercept Point
36.0
dBm
850MHz
32.0
34.0
dBm
1950MHz
Output Power
13.0
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
4400
MHz
Return Loss >10dB
Input Return Loss
14.0
20.0
dB
1950MHz
Output Return Loss
9.0
11.0
dB
1950MHz
Noise Figure
4.5
5.5
dB
1950MHz
Device Operating Voltage
4.7
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
70
°C/W
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SBA5089Z
Absolute Maximum Ratings
Parameter
Device Current (I
D
)
Device Voltage (V
D
)
RF Input Power
Junction Temp (T
J
)
Operating Temp Range (T
L
)
Storage Temp
Operating Dissipated Power
Rating
130
6
+17
+150
-40 to +85
+150
0.65
Unit
mA
V
dBm
°C
°C
°C
W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
Typical Performance at Key Operating Frequencies
Parameter
Small Signal Gain
Output Third Order Intercept
Point
Output Power at 1dB
Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Unit
dB
dBm
dBm
dB
dB
dB
dB
100MHz
20.5
36.3
19.8
29
27
22
4.1
500MHz
20.2
35.8
19.8
27
21
22
4.3
850MHz
19.9
36.0
19.7
25
17
23
4.2
1950MHz
18.0
34.0
19.5
20
11
23
4.5
2400MHz
17.1
32.7
18.8
17
11
23
-
3500MHz
15.3
30.9
17.1
11.8
11
23
-
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39, T
L
=25°C, Z
S
=Z
L
=50
Test Conditions:
Noise Figure vs. Frequency
O
3
vs. Frequency
IP
38
36
OIP
3
(dBm)
+25c
-40c
+85c
6
Noise Figure (dB)
5
4
3
2
0
0.5
1
1.5
Frequency (GHz)
21
20
P
1dB
(dBm)
19
18
17
16
15
0
0.5
1
1.5
2
2.5
+25c
-40c
+85c
34
32
30
28
26
2
P1dB vs. Frequency
+25c
-40c
+85c
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (G z)
H
3
3.5
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111204
SBA5089Z
|S
11
| vs. Frequency
0
25
Preliminary
Advanced Data Sheet
|S
21
| vs. Frequency
20
-10
s11 (dB)
s21 (dB)
+25c
15
-20
10
+25c
-30
-40c
+85c
5
-40c
+85c
-40
0
1
2
3
Frequency (GHz)
4
5
6
0
0
1
2
3
4
5
6
Frequency (GHz)
|S
12
| vs. Frequency
-10
|S
22
| vs. Frequency
0
+25c
-40c
+85c
-15
-10
s22 (dB)
s12 (dB)
-20
-20
-25
-30
+25c
-40c
+85c
-30
0
1
2
3
Frequency (GHz)
4
5
6
-40
0
1
2
3
Frequency (GHz)
4
5
6
IS-95 @850M
Hz
Adj. Channel Pwr. vs. Channel output Pwr.
-30
-35
-40
-45
-50
-55
-60
-65
-70
6
8
10
12
dBm
14
-30
-35
-40
-45
-50
-55
-60
-65
-70
6
IS-95 @ 1950MHz
Adj. Channel Pwr. vs. Channel Output Power
dBc
dBc
+25c
-40c
+85c
+25c
-40c
+85c
16
8
10
12
dBm
14
16
DS111204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SBA5089Z
Basic Application Circuit
V
S
R
BIAS
1 uF
1000
pF
C
D
L
C
RF in
C
B
1
SBA-5089
3
2
C
B
4
RF out
Evaluation Board Layout
V
S
R
BIAS
1 uF
1000 pF
BA5
C
B
L
C
C
D
C
B
Mounting Instructions:
1. Solder the copper pad on the backside of the device package to the ground plane.
2.. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
Application Circuit Element Values
Reference Designator
C
B
C
D
L
C
500MHz
220pF
100pF
68nH
850MHz
100pF
68pF
33nH
1950MHz
68pF
22pF
22nH
2400MHz
56pF
22pF
18nH
3500MHz
39pF
15pF
15nH
Recommended Bias Resistor Values for I
D
=80mA, R
BIAS
=(V
S
-V
D
) /I
D
Supply Voltage (V
S
)
R
BIAS
7.5V
33
8V
39
10V
68
12V
91
Note: R
BIAS
provides DC bias stability over temperature.
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111204
SBA5089Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera-
tion.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for
proper operation.
PCB Pad Layout
PCB Pad Layout
Dimensions in inches [millimeters]
DS111204
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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