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SBB2089ZSQ

Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN

器件类别:无线/射频/通信    射频和微波   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Qorvo
包装说明
TO-243
Reach Compliance Code
compliant
ECCN代码
5A991.G
特性阻抗
50 Ω
构造
COMPONENT
增益
18.5 dB
最大输入功率 (CW)
24 dBm
安装特点
SURFACE MOUNT
功能数量
1
端子数量
3
最大工作频率
850 MHz
最小工作频率
50 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-243
电源
5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
98 mA
表面贴装
YES
技术
BIPOLAR
文档预览
SBB2089Z
50MHz to 850MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB2089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB2089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
dB
30.0
20.0
10.0
0.0
Features
OIP
3
=42.8dBm at 240MHz
P
1dB
=20.8dBm at 500MHz
Single Fixed 5V Supply
Robust 2000V ESD, Class 2
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Termi-
nals
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
S21
Applications
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-10.0
-20.0
-30.0
-40.0
-50.0
50.0
S22
S11
S11
S21
S22
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
Parameter
Small Signal Gain
Min.
Specification
Typ.
Max.
Unit
Condition
20.0
dB
70MHz
18.5
20.0
21.5
dB
240MHz
18.5
20.0
21.5
dB
400MHz
Output Power at 1dB Compression
20.0
dBm
70MHz
20.0
dBm
240MHz
18.5
21.0
dBm
400MHz
Third Order Intercept Point
41.0
dBm
70MHz
43.0
dBm
240MHz
39.0
41.0
dBm
400MHz
Return Loss
50 to 850
MHz
Minimum 10dB
Input Return Loss
15.0
20.0
dB
70MHz to 5000MHz
Output Return Loss
11.0
14.0
dB
70MHz to 5000MHz
Noise Figure
2.7
3.7
dB
500MHz
Reverse Isolation
22.0
dB
70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0
5.3
V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: V
D
=5V, I
D
=90mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, T
L
=25°C, Z
S
=Z
L
=50, Tested with Bias Tees
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 7
SBB2089Z
Absolute Maximum Ratings
Parameter
Device Current (I
D
)
Device Voltage (V
D
)
RF Input Power
Junction Temp (T
J
)
Operating Temp Range (T
L
)
Storage Temp
Power Dissipation
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
Rating
110
5.5
24
+150
-40 to +85
+150
0.61
Class 2
MSL2
Unit
mA
V
dBm
°C
°C
°C
W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
Typical RF Performance at Key Operating Frequencies (With Application Circuit)
Parameter
Unit
dB
dBm
dBm
dB
dB
dB
50MHz 70MHz
20.0
40.0
20.0
15.0
21.0
22.0
20.0
40.0
20.0
18.0
23.0
22.0
100
MHz
20.0
41.0
20.0
19.0
24.0
22.0
240
MHz
20.0
42.0
20.0
20.0
27.0
22.0
400
MHz
20.0
41.0
20.0
20.0
34.0
22.0
500
MHz
20.0
40.0
20.0
19.0
30.0
22.0
2.8
850
MHz
20.0
35.0
19.0
16.0
14.0
22.0
2.9
Small Signal Gain, S
21
Output Third Order Intercept Point, OIP
3
Output Power at 1dB Compression, P
1dB
Input Return Loss, IRL
Output Return Loss, ORL
Reverse Isolation, S
12
Noise Figure, NF
Test Conditions: V
CC
=5V I
D
=90mA Typ.
Noise Figure versus Frequency
6.0
5.0
dB
3.1
2.9
2.7
2.6
2.7
OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm T
L
=25°C Z
S
=Z
L
=50
Data on charts taken with Application Circuit
P1dB versus Frequency
25.0
20.0
P1dB (dBm)
4.0
NF (dB)
3.0
2.0
1.0
0.0
50.0
150.0
250.0
350.0
450.0
550.0
650.0
750.0
850.0
15.0
25C
-40C
85C
10.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0
650.0 750.0
850.0
5.0
50.0
Frequency (MHz)
50.0
Frequency (MHz)
OIP3 versus Frequency
45.0
OIP3 (dBm)
40.0
35.0
30.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
25.0
50.0
Frequency (MHz)
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718
SBB2089Z
Application Circuit S-Parameters Over Temperature
S11 versus Frequency
0.0
-5.0
S21 versus Frequency
30.0
25.0
-10.0
S11 (dB)
S21 (dB)
-15.0
-20.0
-25.0
-30.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
20.0
25C
-40C
85C
15.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
10.0
50.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
S22 versus Frequency
0.0
25C
-40C
85C
-10.0
S22 (dB)
S12 dB
-20.0
-30.0
-40.0
25C
-40C
85C
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
-50.0
50.0
Frequency (GHz)
Frequency (GHz)
Device Current Over Temperature with Application Circuit
Current versus Voltage Over Temperature
Application Circuit
120.0
100.0
80.0
60.0
40.0
20.0
0.0
Current (mA)
-40C
25C
85C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Voltage (V)
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 7
SBB2089Z
S-Parameters Over Temperature (Bias Tee)
S11 versus Frequency
0.0
-5.0
-10.0
30.0
S21 versus Frequency
25C
-40C
85C
25.0
25C
-40C
85C
S11 (dB)
-15.0
-20.0
S21 (dB)
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
20.0
15.0
-25.0
-30.0
50.0
10.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
Frequency (MHz)
S12 versus Frequency
0.0
-5.0
-10.0
S22 versus Frequency
0.0
25C
-40C
85C
-5.0
-10.0
S12 (dB)
S22 (dB)
-15.0
-20.0
-25.0
-30.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
-15.0
-20.0
-25.0
-30.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
25C
-40C
85C
Frequency (MHz)
Frequency (MHz)
Device Current Over Temperature with Application Circuit
Current versus Voltage Over Temperature
Application Circuit
120.0
100.0
80.0
60.0
40.0
20.0
0.0
Current (mA)
-40C
25C
85C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Voltage (V)
4 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718
SBB2089Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Suggested PCB Pad Layout
Preliminary
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 7
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参数对比
与SBB2089ZSQ相近的元器件有:。描述及对比如下:
型号 SBB2089ZSQ
描述 Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, BIPolar, HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN
是否Rohs认证 符合
厂商名称 Qorvo
包装说明 TO-243
Reach Compliance Code compliant
ECCN代码 5A991.G
特性阻抗 50 Ω
构造 COMPONENT
增益 18.5 dB
最大输入功率 (CW) 24 dBm
安装特点 SURFACE MOUNT
功能数量 1
端子数量 3
最大工作频率 850 MHz
最小工作频率 50 MHz
最高工作温度 85 °C
最低工作温度 -40 °C
封装主体材料 PLASTIC/EPOXY
封装等效代码 TO-243
电源 5 V
射频/微波设备类型 WIDE BAND LOW POWER
最大压摆率 98 mA
表面贴装 YES
技术 BIPOLAR
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