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SBLB25L30CTHE3_A/P

肖特基二极管与整流器 25A,30V,TO-263AB AEC-Q101 Qualified

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PSSO-G2
Reach Compliance Code
unknown
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.49 V
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
180 A
元件数量
2
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
12.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
30 V
最大反向电流
900 µA
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
Dual Low V
F
Common Cathode Schottky Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
SBL25L30CT
PIN 1
PIN 3
PIN 2
CASE
3
1
SBLF25L30CT
PIN 1
PIN 3
PIN 2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
(for ITO-220AB and D
2
PAK (TO-263AB) package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
K
2
1
SBLB25L30CT
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, switching
mode power supplies, freewheeling diodes, OR-ing diodes,
DC/DC converters, and polarity protection application.
MECHANICAL DATA
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Circuit configuration
2 x 12.5 A
30 V
180 A
0.39 V
150 °C
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Common cathode
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
at T
C
= 95 °C
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
SBL25L30CT
30
25
12.5
180
-55 to +150
1500
°C
V
A
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min
Revision: 13-Jun-2018
Document Number: 88731
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
SYMBOL
V
F (1)
TEST CONDITIONS
12.5 A
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
VALUE
0.39
0.49
0.90
50
100
mA
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at DC blocking
voltage per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
I
R (2)
Rated V
R
T
J
= 100 °C
T
J
= 125 °C
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
per diode
SYMBOL
R
JC
SBL
1.5
SBLF
4.0
SBLB
1.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
SBL25L30CT-E3/45
SBLF25L30CT-E3/45
SBLB25L30CT-E3/45
SBLB25L30CT-E3/81
SBLF25L30CTHE3/45
(1)
SBLB25L30CTHE3_A/P
(1)
SBLB25L30CTHE3_A/I
(1)
UNIT WEIGHT (g)
1.85
1.99
1.35
1.35
1.99
1.35
1.35
PACKAGE CODE
45
45
45
81
45
P
I
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and
D
2
PAK (TO-263AB)
Revision: 13-Jun-2018
Document Number: 88731
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
30
Resistive or Inductive Load
25
T
J
= 150 °C
20
15
10
5
0
0
50
100
150
1000
Instantaneous Reverse Leakage
Current (mA)
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
1
T
J
= 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
10 000
T
J
= T
J
Max.
8.3 ms
Single
Half
Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward
Surge
Current (A)
200
150
100
50
0
1
10
100
Junction Capacitance (pF)
250
1000
100
0.1
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
T
J
= 150 °C
10
T
J
= 125 °C
T
J
= 100 °C
1
Transient Thermal Impedance (°C/W)
0.5
0.6
100
100
Instantaneous Forward Current (A)
10
0.1
T
J
= 25 °C
1
0.01
0
0.1
0.2
0.3
0.4
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Jun-2018
Document Number: 88731
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
Vishay General Semiconductor
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
PIN
1 2 3
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
2
3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 13-Jun-2018
Document Number: 88731
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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参数对比
与SBLB25L30CTHE3_A/P相近的元器件有:SBLB25L30CTHE3_A/I。描述及对比如下:
型号 SBLB25L30CTHE3_A/P SBLB25L30CTHE3_A/I
描述 肖特基二极管与整流器 25A,30V,TO-263AB AEC-Q101 Qualified 肖特基二极管与整流器 25A,30V,TO-263AB AEC-Q101 Qualified
是否Rohs认证 符合 符合
包装说明 R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknown unknown
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.49 V 0.49 V
JEDEC-95代码 TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 R-PSSO-G2
最大非重复峰值正向电流 180 A 180 A
元件数量 2 2
相数 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 12.5 A 12.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
参考标准 AEC-Q101 AEC-Q101
最大重复峰值反向电压 30 V 30 V
最大反向电流 900 µA 900 µA
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子形式 GULL WING GULL WING
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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