SBR5030 THRU SBR5060
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed:
250℃/10 seconds, 0.17" (4.3mm) from case
CURRENT 50.0Amperes
VOLTAGE 30 to 60 Volts
TO-3P
.120(3.05)
DIA.
.115(2.92)
.180(4.53)
.170(4.32)
.840(21.34)
.820(20.83)
.12(3.0)
.11(2.8)
.170(4.32)
.150(3.81)
.095
(2.4)
.800(20.32)
.770(19.56)
.050(1.27)
.045(1.14)
.225(5.7)
.205(5.2)
PIN 1
PIN 3
Positive CT
Suffix "C"
.030(0.8)
.020(0.5)
.635(16.13)
.625(15.88)
.320(8.13)
.310(7.87)
.205(5.21)
.195(4.49)
30
Mechanical Data
· Case : JEDEC TO-3P molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.20ounce, 5.6 grams
+
CASE
PIN 2
PIN 1
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at V
R
(equiv.)<0.2
VR(DC)
(See Fig 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 25A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
I
R
Rθ
JC
T
J
T
STG
100
1.4
-65 to +125
-65 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
SBR5030 SBR5035 SBR5040 SBR5045 SBR5050 SBR5060
Units
30
21
30
35
24
35
40
28
40
50.0
45
32
45
50
35
50
60
42
60
Volts
Volts
Volts
Amps
I
FSM
400.0
Amps
V
F
0.65
10.0
0.70
Volts
mA
℃/W
℃
℃
150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR5030-SBR5060
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
50
PEAK FORWARD SURGE
CURRENT (AMPERES)
40
30
20
10
0
0
50
100
150
0
1.0
2.0
5.0
10
20
50
100
LEAD TEMPERATURE (℃)
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
500
400
300
200
100
──
SBR5030-SBR5045
- - - SBR5050-SBR5060
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
NUMBER OF CYCLES AT 60Hz
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
FIG.3-TYPICAL REVERSE CHARACTERISTICS
10
T
C
=150℃
INSTANTANEOUS FORWARD CURRENT (AMPERES)
SBR5030-SBR5045
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
10
T
C
=125℃
1.0
1.0
SBR5050-SBR5060
T
C
=75℃
0.1
T
C
=25℃
T
J
=25℃
PULSE WIDTH=300
㎲
1% DUTY CYCLE
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
──
SBR5030-SBR5045
- - - SBR5050-SBR5060
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.001
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
