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SBR560

5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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SBR520 THRU SBR5100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 5.0Amperes
VOLTAGE 20 to 100 Volts
ITO-220A
10 0.5
3.2
6.4 0.1
4.5 0.2
2.7
2.7 0.2
3.7 0.2
Mechanical Data
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
PIN 1
+
5.08
0.7 0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
CASE
PIN 2
CasePositive
+
CASE
PIN 2
+
Case Negative
Suffix"R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 5.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBR
520
20
SBR
530
30
SBR
540
40
SBR
560
60
SBR
580
80
SBR
590
90
SBR
5100
100
Units
Volts
Volts
Volts
Amps
Amps
Amps
14
20
21
30
28
40
42
60
5.0
10.0
100.0
56
80
63
90
70
100
V
F
I
R
JC
T
J
T
STG
0.55
0.70
1.0
0.85
Volts
mA
℃/W
15
5.0
-65 to +125
-65 to +150
50
-65 to +150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR520-SBR5100
FIG. 1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CHRRENT.
AMPERES
12.5
PEAK FORWARD SURGE
CURRENT, AMPERES
10
7.5
5
2.5
0
0
50
100
150
150
125
100
75
50
25
0
1
2
5
10
20
50
100
T
L
=75 C
8.3ms SINGLE HALF SINE-WAVE
JEDEC METHOD
o
FIG. 2 - MAXIMUM NON-REPETITIVE
SURGE CURRENT
CASE TEMPERATURE,
!
NUMBER OF CYCLES AT 60H
Z
FIG. 3 - TYPICAL REVERSE
CHARACTERISTICS
100
T
J
=100
50
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
10
T
J
=75
1.0
T
J
=25
1.0
SBR520~540
SBR560~580
SBR590~5100
T
J
=25
PULSE WIDTH=300us
2% DUTY CYCLE
0.1
0.1
0.2
0.01
0
20
40
60
80
100 120 140
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERAENT OR RATED VOLTAGE PEAK
REVERSE VOLTAGE
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参数对比
与SBR560相近的元器件有:SBR520、SBR540、SBR530、SBR590、SBR580、SBR5100。描述及对比如下:
型号 SBR560 SBR520 SBR540 SBR530 SBR590 SBR580 SBR5100
描述 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220
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