Ordering number : EN8254A
SBS811
SANYO Semiconductors
DATA SHEET
SBS811
Applications
•
Schottky Barrier Diode
30V, 2.0A Rectifier
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
Small Switching noise
Low forward voltage (IF=2A, VF max=0.40V)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
30
2.0
10
-
-55 to +125
-
-55 to +125
Unit
V
V
A
A
°C
°C
Package Dimensions
unit : mm (typ)
7012-001
0.25
0.3
8
7
6 5
0.15
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
SBS811-TL-E
Packing Type : TL
Marking
SC
1
2
2.9
0.75
3
0.65
4
TL
2.8
2.3
LOT No.
0.25
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : VEC8
Electrical Connection
8
7
6
5
0.07
1
2
3
4
http://www.sanyosemi.com/en/network/
91912 TKIM/61005SB MSIM TB-00001372 No.8254-1/6
SBS811
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=2.0mA
IF=1.0A
IF=2.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When Mounted in Cu-foiled area of 1.92mm
×0.03mm
on glass epoxy substrate
When mounted on ceramic substrate (1000mm
2
×0.8mm)
2
Conditions
Ratings
min
30
0.30
0.35
75
20
75
70
0.35
0.40
1.25
typ
max
Unit
V
V
V
mA
pF
ns
°C / W
°C / W
trr Test Circuit
Duty
≤
10%
100mA 100mA
10mA
trr
Package
VEC8
50Ω
10μs
100Ω
10Ω
--5V
Ordering Information
Device
SBS811-TL-E
Shipping
3,000pcs./reel
memo
Pb Free
10
7
5
3
2
1.0
7
5
IF -- VF
5
10
°
C
0
°
C
75
°
C
50
°
C
25
°
C
Ta
=
12
3
2
0.1
7
5
3
2
0.01
0
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
0.0001
0
IR -- VR
°
C
Ta=125
100
°
C
75
°
C
Reverse Current, IR -- mA
Forward Current, IF -- A
50
°
C
25
°
C
--25
°
C
--25
°
C
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
5
10
15
20
25
30
35
IT08569
Forward Voltage, VF -- V
IT08568
Reverse Voltage, VR -- V
No.8254-2/6
SBS811
Average Forward Power Dissipation, PF(AV) -- W
1.2
PF(AV) -- IO
Rectangular wave
Interterminal Capacitance, C -- pF
(1)
θ
360°
7
C -- VR
1.0
(2) (4) (3)
5
3
2
0.8
Sine wave
180°
360°
0.6
100
7
5
0.4
0.2
0
0
0.5
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
1.0
1.5
2.0
2.5
IT08571
3
2
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Average Forward Current, IO -- A
14
Reverse Voltage, VR -- V
IT08572
IFSM -- t
Current waveform 50Hz sine wave
I
S
20ms
t
Surge Forward Current, IFSM(Peak) -- A
12
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00435
No.8254-3/6
SBS811
Taping Specification
SBS811-TL-E
No.8254-4/6
SBS811
Outline Drawing
SBS811-TL-E
Mass (g) Unit
0.015 mm
* For reference
Land Pattern Example
Unit: mm
0.4
0.6
2.8
0.65
No.8254-5/6
