Ordering number : ENA1006B
SCH2825
N-Channel Power MOSFET
30V, 1.6A, 180m
Ω
, Single SCH6 with Schottky Diode
Features
•
http://onsemi.com
•
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
•
Ultrahigh-speed switching
•
4V drive
[MOSFET]
•
Low ON-resistance
•
Short reverse recovery time
•
Low forward voltage
[SBD]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[MOSFET]
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
V
RSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
30
30
0.5
3
-
-55 to +125
-
-55 to +125
V
V
A
A
°C
°C
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
1unit
2
Symbol
Conditions
Ratings
30
±20
1.6
6.4
0.6
150
-
-55 to +125
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-003
1.6
0.05
0.2
6 5 4
0.2
Product & Package Information
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
SCH2825-TL-E
Packing Type : TL
Marking
LOT No.
LOT No.
XA
1.6
1.5
0.05
1
2
3
0.5
0.56
TL
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SCH6
Electrical Connection
6
5
4
0.25
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002992/62712TKIM/D1207PE TIIM TC-00001031 No. A1006-1/6
SCH2825
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VR
VF
IR
C
trr
IR=0.5mA
IF=0.5A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
13
10
30
0.42
0.48
120
V
V
μA
pF
ns
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=1.6A, VGS=0V
VDS=10V, VGS=10V, ID=1.6A
VDS=10V, f=1MHz
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=800mA
ID=800mA, VGS=10V
ID=400mA, VGS=4V
1.2
0.6
1.0
135
230
88
19
11
3.4
See specified Test Circuit.
3.5
10.6
4.0
2.0
0.33
0.29
0.82
1.2
180
330
30
1
±10
2.6
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Switching Time Test Circuit
(MOSFET)
VIN
10V
0V
VIN
D
PW=10μs
D.C.≤1%
G
ID=800mA
RL=18.75Ω
VOUT
VDD=15V
trr Test Circuit
(SBD)
Duty≤10%
100mA
10mA
trr
memo
Pb Free
--5V
SCH2825
P.G
50Ω
S
Ordering Information
Device
SCH2825-TL-E
Package
SCH6
Shipping
5,000pcs./reel
100mA
10μs
50Ω
100Ω
10Ω
No. A1006-2/6
SCH2825
1.8
ID -- VDS
6.0V
[MOSFET]
2.0
ID -- VGS
VDS=10V
[MOSFET]
4 .0
V
1.6
1.4
1.8
1.6
Drain Current, ID -- A
8.0V
Drain Current, ID -- A
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10.0V
1.4
1.2
1.0
15.0V
3.5V
0.6
0.4
VGS=2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.2
0
0
0.5
1.0
1.5
2.0
2.5
--25
°
C
3.0
3.0V
Ta=
75
°
C
25
°
0.8
C
3.5
4.0
390
Drain to Source Voltage, VDS -- V
IT13107
RDS(on) -- VGS
[MOSFET]
Ta=25
°
C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Gate to Source Voltage, VGS -- V
390
360
330
300
270
240
210
180
150
120
90
60
--60
--40
--20
0
20
40
60
80
100
120
IT13108
RDS(on) -- Ta
[MOSFET]
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
360
330
300
270
240
210
180
150
120
90
0
2
4
6
8
10
12
14
16
ID=0.4A
0.8A
=4
V GS
4
=0.
, ID
V
A
A
=0.8
V, I D
=10
V
GS
140
160
Gate to Source Voltage, VGS -- V
3
IT13131
Ambient Temperature, Ta --
°
C
3
2
1.0
7
5
IT13132
y
fs -- ID
[MOSFET]
IS -- VSD
[MOSFET]
Forward Transfer Admittance,
y
fs -- S
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
0.001
VDS=10V
VGS=0V
Source Current, IS -- A
Ta=
--
0.4
0.01
7
5
3
2
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Drain Current, ID -- A
5
3
5 7 1.0
IT13111
0.001
0.2
0.6
75
°
C
0.8
3
2
25
°
C
25
°
C
C
5
°
--2
=
Ta
°
C
25
3
2
0.1
7
5
75
°
C
1.0
1.2
SW Time -- ID
[MOSFET]
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
3
2
Diode Forward Voltage, VSD -- V
IT13112
Ciss, Coss, Crss -- VDS
[MOSFET]
f=1MHz
Switching Time, SW Time -- ns
2
100
7
5
3
2
Ciss
td(off)
10
7
5
3
2
td(on)
tr
tf
Coss
Crss
10
7
1.0
0.1
5
2
3
5
7
1.0
2
3
5
IT13113
0
5
10
15
20
25
30
IT13114
Drain Current, ID -- A
Drain to Source Voltage, VDS -- V
No. A1006-3/6
SCH2825
10
9
VGS -- Qg
VDS=10V
ID=1.6A
[MOSFET]
2
10
7
5
ASO
IDP=6.4A(PW
≤
10
μ
s)
[MOSFET]
Gate to Source Voltage, VGS -- V
8
10
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ID=1.6A
DC
10
m
s
op
100
er
m
ati
s
on
(T
a=
25
°
C
Operation in this
)
area is limited by RDS(on).
1m
s
0
μ
s
0.01
0.1
Ta=25
°
C
Single pulse
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Total Gate Charge, Qg -- nC
0.7
IT13133
PD -- Ta
W
Drain to Source Voltage, VDS -- V
1.0
7
IT13134
[MOSFET]
IF -- VF
[SBD]
Allowable Power Dissipation, PD -- W
0.6
5
Forward Current, IF -- A
he
0.5
nm
ou
3
2
nte
do
0.4
nc
era
mi
cs
0.3
ub
s
0.1
7
5
3
2
0.01
tra
te
(90
0m
.8m
0.1
0
0
20
40
60
80
100
120
m)
1u
nit
160
140
0
Ta=
125
°
C
100
°
C
75
°
C
50
°
C
25
°
C
0.1
0.2
0.2
m
2
✕
0
0.3
0.4
0.5
0.6
IT07927
Ambient Temperature, Ta --
°
C
100000
7
5
3
2
IT13135
Average Forward Power Dissipation, PF(AV) -- W
IR -- VR
5
°
C
Ta=12
Forward Voltage, VF -- V
0.35
[SBD]
PF(AV) -- IO
(1)
[SBD]
Rectangular wave
0.30
θ
0.25
360
°
(2) (4) (3)
Reverse Current, IR --
μA
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0
100
°
C
75
°
C
Sine wave
0.20
180
°
0.15
360
°
50
°
C
25
°
C
0.10
0.05
0
0
0.1
0.2
(1) Rectangular wave
θ=60°
(2) Rectangular wave
θ=120°
(3) Rectangular wave
θ=180°
(4) Sine wave
θ=180°
0.3
0.4
0.5
0.6
IT08187
5
10
15
20
25
30
IT07928
Reverse Voltage, VR -- V
100
7
C -- VR
Average Output Current, IO -- A
3.5
[SBD]
IFSM -- t
I
S
[SBD]
Surge Forward Current, IFSM(Peak) -- A
f=1MHz
Current waveform 50Hz sine wave
3.0
Interterminal Capacitance, C -- pF
5
2.5
3
2
20ms
t
2.0
1.5
10
7
5
3
0.1
1.0
0.5
0
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Reverse Voltage, VR -- V
IT07891
Time, t -- s
ID00338
No. A1006-4/6
SCH2825
Outline Drawing
SCH2825-TL-E
Mass (g) Unit
0.004 mm
* For reference
Land Pattern Example
Unit: mm
0.3
0.4
1.4
0.5 0.5
No. A1006-5/6
