SD101AW-SD101CW
SCHOTTKY DIODES
SOD-123
1.80(.071)
1.40(.055)
1.65(.065)
1.55(.061)
FEATURES
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
3.86(0.152)
3.56(0.145)
2.84(0.112)
2.54(0.100)
3.9(0.154)
3.7(0.146)
2.7(0.106)
2.6(0.102)
.71(0.028)
.50(0.020)
.15(.006)
MAX
1.35(.053)
.94(.037)
.135(.005)
.127(.004)
0.6(.023)
0.5(.020)
1.15(.045)
1.05(.041)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Marking:
SD101AW:S1, SD101BW:S2, SD101CW:S3
.25(.010)
MIN
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @T
A
=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10
u
s
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Electrical ratings @T
A
=25C
PARAMETER
Reverse breakdown voltage
Fowrard voltage
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SYMBOLS
SYMBOLS
SD101AW
60
42
SD101BW
50
35
15
50
2.0
400
300
-65 to +125
SD101CW
40
28
UNITS
VOLTS
V
mA
mA
A
mW
C/W
C
V
RRM
V
RWM
V
DC
V
R(RMS)
I
FM
I
FRM
Pd
R
ΘJA
T
STG
V
(BR)R
Min.
60
50
40
Typ.
Max.
Unit
V
V
F
Reverse current
Capacitance between terminals
Reverse recovery time
0.41
0.40
0.39
1.00
0.95
0.90
0.2
2.0
2.1
2.2
1.0
V
I
RM
C
T
t
rr
uA
pF
ns
Conditions
I
R
=10uA
I
R
=10uA
I
R
=10uA
I
F
=1.0mA
I
F
=1.0mA
I
F
=1.0mA
I
F
=15mA
I
F
=15mA
I
F
=15mA
V
R
=50V
V
R
=40V
V
R
=30V
V
R
=0V,f=1.0MHz
I
F
=I
R
=5mA
Irr=0.1XI
R
,R
L
=100
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RATINGS AND CHARACTERISTIC CURVES SD101AW-SD101CW
FIG. 1- POWER DERATING CURVE
500
10
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
P
d
.POWER DISSIPATION (mW)
400
I
F
,FORWARD CURRENT(mA)
See Note1
B
C
1.0
A
300
200
0.1
100
0
0
0.01
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
T
A
,AMBIENT TEMPERATURE(
C
)
V
F
FORWARD VOLTAGE(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
2
10
Tj=25
C
f=1MHz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
C
T
, TOTAL CAPACITANCE(pF)
I
R
,REVERSE CURRENT(
u
A)
T
A
=125
C
1
T
A
=75
C
0.1
T
A
=25
C
C
B
A
1
0.01
T
A
=0
C
0.001
T
A
=-65
C
10
20
30
40
50
60
0
0
10
20
30
40
50
0.0001
0
V
R
REVERSE VOLTAGE.(V)
V
R
REVERSE VOLTAGE.(V)
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