SD125SCU100A
TECHNICAL DATA
DATA SHEET D0115 REV. –
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Reverse Leakage
200C Operating Temperature
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
Junction Temperature
Storage Temperature
Symbol
V
RWM
I
F(AV)
I
FSM
T
J
T
stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, Sine pulse
(1)
-
-
Max.
100
15
280
-55 to +200
-55 to +200
Units
V
A
A
C
C
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Symbol
V
F1
V
F2
I
R1
I
R2
Junction Capacitance
C
T
Condition
@ 15A, Pulse, T
J
= 25
C
@ 15A, Pulse, T
J
= 125
C
@V
R
= 100V, Pulse,
T
J
= 25
C
@V
R
= 100V, Pulse,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max.
0.84
0.68
0.35
8
600
Units
V
V
mA
mA
pF
(1) in SHD package
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SD125SCU100A
TECHNICAL DATA
DATA SHEET D0115 REV. –
Mechanical Dimensions: In Inches (mm)
Bottom side metallization Ag thickness is 5KA
Top side metallization Al thickness is 25KA
B
A
Bottom side is cathode, top side is anode
Dimension H =0.01050.001(0.270.026) (It can be
customized according to customer requirements)
H
0.125 ± 0.003(3.18 ± 0.08)
A
0.116 ± 0.003(2.95 ± 0.08)
B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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