ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2)
Total Power Dissipation on FR−5 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
V
PP
°P
D
°
R
qJA
T
J
, T
stg
T
L
Air
Contact
Symbol
P
pk
Value
350
±15
±8.0
40
30
200
1.6
635
−55 to +150
260
Unit
Watts
kV
A
kV
°mW°
mW/°C
°C/W
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
V
BR
, Breakdown Voltage
(V)
V
RWM
(V)
5.0
12
I
R
@ V
RWM
(mA)
10
1.0
Min
6.2
13.3
Max
7.3
15.75
I
T
mA
1.0
1.0
Max
Capacitance
(pF)
V
R
= 0 V
f = 1.0 MHz
350
150
Device
SD05T1, G
SD12T1, G
V
C
@ I
PP
= 5 A
(Note 3)
(V)
9.8
19
Max I
PP
(Note 3)
(A)
24
15
V
C
@ Max I
PP
(Note 3)
(V)
14.5
25
3. 8
×
20
ms
pulse waveform.
http://onsemi.com
2
SD05T1 Series
TYPICAL CHARACTERISTICS
280
260
C, CAPACITANCE (pF)
240
220
200
180
160
140
120
100
0
0.5
1
1.5
2
3
2.5
BIAS (V)
3.5
4
4.5
5
C, CAPACITANCE (pF)
140
120
100
80
60
40
20
0
0
2
4
6
BIAS (V)
8
10
12
Figure 1. SD05 Typical Capacitance versus Bias
Voltage
Figure 2. SD12 Typical Capacitance versus
Bias Voltage
1000
LEAKAGE CURRENT (nA)
LEAKAGE CURRENT (nA)
105 125 145
100
10
100
1
10
−55 −35 −15
5
25
45 65 85
TEMPERATURE (°C)
0.1
−55
−30
−5
20
45
70
TEMPERATURE (°C)
95
120
145
Figure 3. SD05 Typical Leakage Current
versus Temperature
Figure 4. SD12 Typical Leakage Current
versus Temperature
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ T
A
= 25°C
100
90
% OF PEAK PULSE CURRENT
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (°C)
200
100
90
80
70
60
50
40
30
20
10
0
0
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
t
P
20
40
t, TIME (ms)
60
80
Figure 5. Pulse Derating Curve
http://onsemi.com
3
Figure 6. 8
×
20
ms
Pulse Waveform
SD05T1 Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
STYLE 1:
PIN 1. CATHODE
2. ANODE
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
H
E
D
b
1
2
E
MIN
0.031
0.000
A3
A
L
NOTE 5
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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