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SD12T1G

350W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 477-02, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
厂商名称
Rochester Electronics
包装说明
LEAD FREE, PLASTIC, CASE 477-02, 2 PIN
针数
2
制造商包装代码
CASE 477-02
Reach Compliance Code
unknow
最大击穿电压
15.75 V
最小击穿电压
13.3 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-G2
JESD-609代码
e3
湿度敏感等级
NOT SPECIFIED
最大非重复峰值反向功率耗散
350 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.2 W
认证状态
COMMERCIAL
最大重复峰值反向电压
12 V
表面贴装
YES
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
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SD05T1 Series
Preferred Device
Transient Voltage
Suppressor Diode
SOD−323 Diodes for ESD Protection
These TVS diodes are designed for applications requiring transient
overvoltage protection capability. They are intended for use in voltage
and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other
applications. These devices are ideal for situations where board space is
at a premium.
Specification Features:
http://onsemi.com
MARKING DIAGRAM
xx MG
G
SOD−323
CASE 477
STYLE 1
xx = Specific Device Code
ZA = SD05T1
ZC = SD12T1
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Steady State Power Routing of 200 mW
Peak Power − 350 W (8 20
ms)
Low Leakage
Cathode Indicated by Polarity Band
Package Weight: 4.507 mg/wmt
Meets IEC61000−4−2 Level 4, 15 kV (Air), 8 kV (Contact)
Meets IEC6100−4−4 Level 4, 40 A
Meets IEC6100−4−5 (Lightning), 24 A
Meets 16 kV Human Body Model ESD Requirements
Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
ORDERING INFORMATION
Device
SD05T1
SD05T1G
SD12T1
SD12T1G
Package
SOD−323
SOD−323
(Pb−Free)
SOD−323
SOD−323
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Epoxy Meets UL 94, V−0
LEAD FINISH:
100% Matte Sn (Tin)
MOUNTING POSITION:
Any
QUALIFIED MAX REFLOW TEMPERATURE:
260°C
Device Meets MSL 1 Requirements
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 2
Publication Order Number:
SD05T1/D
SD05T1 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25°C
IEC 61000−4−2 (ESD)
IEC 61000−4−4 (EFT)
ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000−4−2)
Total Power Dissipation on FR−5 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
V
PP
°P
D
°
R
qJA
T
J
, T
stg
T
L
Air
Contact
Symbol
P
pk
Value
350
±15
±8.0
40
30
200
1.6
635
−55 to +150
260
Unit
Watts
kV
A
kV
°mW°
mW/°C
°C/W
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
V
BR
, Breakdown Voltage
(V)
V
RWM
(V)
5.0
12
I
R
@ V
RWM
(mA)
10
1.0
Min
6.2
13.3
Max
7.3
15.75
I
T
mA
1.0
1.0
Max
Capacitance
(pF)
V
R
= 0 V
f = 1.0 MHz
350
150
Device
SD05T1, G
SD12T1, G
V
C
@ I
PP
= 5 A
(Note 3)
(V)
9.8
19
Max I
PP
(Note 3)
(A)
24
15
V
C
@ Max I
PP
(Note 3)
(V)
14.5
25
3. 8
×
20
ms
pulse waveform.
http://onsemi.com
2
SD05T1 Series
TYPICAL CHARACTERISTICS
280
260
C, CAPACITANCE (pF)
240
220
200
180
160
140
120
100
0
0.5
1
1.5
2
3
2.5
BIAS (V)
3.5
4
4.5
5
C, CAPACITANCE (pF)
140
120
100
80
60
40
20
0
0
2
4
6
BIAS (V)
8
10
12
Figure 1. SD05 Typical Capacitance versus Bias
Voltage
Figure 2. SD12 Typical Capacitance versus
Bias Voltage
1000
LEAKAGE CURRENT (nA)
LEAKAGE CURRENT (nA)
105 125 145
100
10
100
1
10
−55 −35 −15
5
25
45 65 85
TEMPERATURE (°C)
0.1
−55
−30
−5
20
45
70
TEMPERATURE (°C)
95
120
145
Figure 3. SD05 Typical Leakage Current
versus Temperature
Figure 4. SD12 Typical Leakage Current
versus Temperature
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ T
A
= 25°C
100
90
% OF PEAK PULSE CURRENT
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (°C)
200
100
90
80
70
60
50
40
30
20
10
0
0
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
t
P
20
40
t, TIME (ms)
60
80
Figure 5. Pulse Derating Curve
http://onsemi.com
3
Figure 6. 8
×
20
ms
Pulse Waveform
SD05T1 Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
STYLE 1:
PIN 1. CATHODE
2. ANODE
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
H
E
D
b
1
2
E
MIN
0.031
0.000
A3
A
L
NOTE 5
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax:
480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone:
81−3−5773−3850
ON Semiconductor Website:
http://onsemi.com
Order Literature:
http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
http://onsemi.com
4
SD05T1/D
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参数对比
与SD12T1G相近的元器件有:SD05T1G、SD12T1、SD05T1。描述及对比如下:
型号 SD12T1G SD05T1G SD12T1 SD05T1
描述 350W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 477-02, 2 PIN 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 477-02, 2 PIN 350W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 477-02, 2 PIN 350W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 477-02, 2 PIN
是否无铅 含铅 含铅 不含铅 含铅
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
包装说明 LEAD FREE, PLASTIC, CASE 477-02, 2 PIN R-PDSO-G2 R-PDSO-G2 PLASTIC, CASE 477-02, 2 PIN
针数 2 2 2 2
制造商包装代码 CASE 477-02 CASE 477-02 CASE 477-02 CASE 477-02
Reach Compliance Code unknow unknown unknown unknow
最大击穿电压 15.75 V 7.3 V 15.75 V 7.3 V
最小击穿电压 13.3 V 6.2 V 13.3 V 6.2 V
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
JESD-609代码 e3 e0 e0 e0
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大非重复峰值反向功率耗散 350 W 350 W 350 W 350 W
元件数量 1 1 1 1
端子数量 2 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 240 240 240
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 0.2 W 0.2 W 0.2 W 0.2 W
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
最大重复峰值反向电压 12 V 5 V 12 V 5 V
表面贴装 YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 MATTE TIN TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 30 30 30
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