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SD1553C25S20K

Rectifier Diode, 1 Phase, 1 Element, 1825A, 2500V V(RRM), Silicon, DO-200AC, KPUK-2

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
DO-200
包装说明
O-CEDB-N2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
SNUBBER DIODE, FREEWHEELING DIODE
应用
HIGH VOLTAGE FAST RECOVERY HIGH POWER
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
2.23 V
JEDEC-95代码
DO-200AC
JESD-30 代码
O-CEDB-N2
JESD-609代码
e0
最大非重复峰值正向电流
26180 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最大输出电流
1825 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
2500 V
最大反向恢复时间
2 µs
表面贴装
YES
端子面层
TIN LEAD
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Bulletin I2091 rev. B 04/00
SD1553C..K SERIES
FAST RECOVERY DIODES
Hockey Puk Version
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 3000V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AC (K-PUK)
Maximum junction temperature 150°C
1825A
1650A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
case style DO-200AC (K-PUK)
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
hs
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
V
RRM
range
t
rr
@ T
J
T
J
SD1553C..K
S20
1825
55
3100
25000
26180
Units
A
°C
A
A
A
V
µs
°C
°C
S30
1650
55
2800
22000
23000
1800 to 2500 1800 to 3000
2.0
25
- 40 to 150
3.0
25
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1
SD1553C..K Series
Bulletin I2091 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
18
SD1553C..S20K
22
25
18
22
SD1553C..S30K
25
28
30
V
RRM
, maximum repetitive
peak reverse voltage
V
1800
2200
2500
1800
2200
2500
2800
3000
V
RSM
, maximum non-
repetitive peak rev. voltage
V
1900
2300
2600
1900
2300
2600
2900
3100
I
RRM
max.
@ T
J
= T
J
max.
mA
75
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ heatsink temperature
I
F(RMS)
Max. RMS forward current
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
SD1553C..K
S20
55 (85)
3100
25000
26180
21030
22010
S30
55 (85)
2800
22000
23000
18500
19370
2421
2210
1712
1563
24210
1.31
Units Conditions
A
°C
A
180° conduction, half sine wave
Double side (single side) cooled
@ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
1825(865) 1650(790)
I
2
t
Maximum I
2
t for fusing
3126
2854
2210
2018
I
2
√t
Maximum I
2
√t
for fusing
31260
1.15
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
V
1.29
1.45
(I >
π
x I
F(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
mΩ
0.25
2.23
0.30
2.60
V
(I >
π
x I
F(AV)
),T
J
= T
J
max.
I
pk
= 4000A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
Low level value of forward
slope resistance
0.27
0.32
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
2
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SD1553C..K Series
Bulletin I2091 rev. B 04/00
Recovery Characteristics
Code
T
J
= 25
o
C
typical t
(µs)
rr
Test conditions
I
di/dt
(A/µs)
100
100
V
Max. values @ T
J
= 150 °C
r
pk
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
(A)
1000
1000
(V)
- 50
- 50
@ 25% I
RRM
(µs)
4.5
5.0
(µC)
650
780
(A)
240
260
S20
S30
2.0
3.0
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
SD1553C..K
S20
S30
-40 to 150
-40 to 150
0.04
0.02
22250
(2250)
425
DO-200AC (K-PUK)
Units
°C
K/W
N
(Kg)
g
Conditions
Max. junction operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance, case junction
to heatsink
F
wt
Mounting force, ± 10%
Approximate weight
Case style
DC operation single side cooled
DC operation double side cooled
See Outline Table
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Sinusoidal conduction
Conduction angle
180°
120°
90°
60°
30°
Single Side Double Side
0.0018
0.0019
0.0021
0.0027
0.0039
0.0067
0.0021
0.0027
0.0039
0.0067
Rectangular conduction
Units
Single Side Double Side
0.0012
0.0012
0.0021
0.0029
0.0041
0.0068
0.0021
0.0029
0.0041
0.0068
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
SD 155
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
2
3
3
C
4
30 S30
5
6
K
7
C = Ceramic Puk
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
t
rr
code
K = Puk Case DO-200AC (K-PUK)
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3
SD1553C..K Series
Bulletin I2091 rev. B 04/00
Outline Table
3.5(0.14) DIA. NOM. x
2.5(0.1) DEEP MIN.
BOTH ENDS
7 4 . 5 ( 2 .9 3 ) D IA . M A X .
1 (0.04) MIN.
BOTH ENDS
47.5 (1.87) DIA. MAX.
TWO PLACES
2 7 .5 (1 .0 8 ) M A X .
Case Style DO-200AC (K-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
67 (2.64) DIA. MAX.
Maxim um Allow able Heatsin k T em perature (°C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )
1 60
1 40
1 20
SD 1 5 5 3 C ..S 2 0 K S e rie s
(Sin g le Sid e C o o le d )
R
th J- hs
(D C ) = 0 .0 4 K / W
160
140
120
100
C o ndu c tio n Pe rio d
SD1553C..S20K Series
(Sin gle Side Cooled)
R
th J- hs
(DC) = 0.04 K/W
C o nduc tion A ng le
1 00
80
60
40
0
200
400
600
800
1 0 00
1 2 00
A v e ra g e F o rw a r d C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
80
60
40
20
0
0
400
800
1200
1600
2000
Average Forward Curren t (A)
Fig. 2 - Current Ratings Characteristics
30°
60°
90°
120°
180°
DC
30°
18 0°
60°
90°
12 0°
4
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SD1553C..K Series
Bulletin I2091 rev. B 04/00
Maxim um Allowable Heatsink Tem perature (°C)
160
140
120
100
80
60
40
0
200
400
600
800
1000
1200
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
C o ndu ctio n A ng le
Maxim um Allowable Heatsink Tem peratu re ( °C)
SD 1553C..S30K Series
(Single Side Cooled)
R
thJ-hs
(D C) = 0.04 K/W
160
140
120
100
80
60
40
20
0
400
800
1200
30°
60°
90°
120°
180°
DC
1600
2000
C o nduc tio n P e rio d
SD1553C..S30K Series
(Single Sid e Cooled )
R
th J-hs
(DC) = 0.04 K/W
30°
60°
90°
120°
180°
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Maxim um Allowable Heatsink Tem perature (°C)
M a x im u m A llo w a b le H e a ts in k T e m p e ra t u re (°C )
160
140
120
100
80
60
40
S D 1 5 5 3 C ..S 2 0 K Se rie s
(D o u b le S id e C o o le d )
R
th J- hs
(D C ) = 0 .0 2 K / W
160
140
120
100
80
60
40
30°
20
0
500 1000 1500 2000 2500 3000 3500
Average Forward Curren t (A)
Fig. 6 - Current Ratings Characteristics
C o nd uc tio n Pe rio d
SD 1553C..S20K Series
(Double Side Cooled)
R
th J- hs
(DC) = 0.02 K/W
C o ndu c tio n A ng le
60 °
30°
0
500
1 00 0
90°
120°
180°
2 0 00
2 5 00
90°
60°
120°
180°
DC
20
15 0 0
A v e ra g e F o r w a rd C u rre n t (A )
Fig. 5 - Current Ratings Characteristics
Maxim um Allowab le Heatsin k Tem pera ture (°C)
160
140
120
Maximum Allowable H eatsink Temperature (°C)
SD1553C..S30K Series
(D ouble Side Cooled)
R
th J-hs
(DC) = 0.02 K/W
160
140
120
100
80
60
40
30°
20
0
500
1000
1500
2000
90°
60°
120°
180°
DC
2500
3000
Co n du ctio n Pe rio d
SD 1553C..S30K Series
(Double Side Cooled)
R
th J- hs
(DC) = 0.02 K/W
C o nduc tio n A ng le
100
80
60
40
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
30°
60°
90°
120°
180°
Average Forward Curren t (A)
Fig. 8 - Current Ratings Characteristics
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参数对比
与SD1553C25S20K相近的元器件有:SD1553C25S30K、SD1553C22S20K。描述及对比如下:
型号 SD1553C25S20K SD1553C25S30K SD1553C22S20K
描述 Rectifier Diode, 1 Phase, 1 Element, 1825A, 2500V V(RRM), Silicon, DO-200AC, KPUK-2 Rectifier Diode, 1 Phase, 1 Element, 1650A, 2500V V(RRM), Silicon, DO-200AC, KPUK-2 Rectifier Diode, 1 Phase, 1 Element, 1825A, 2200V V(RRM), Silicon, DO-200AC, KPUK-2
是否Rohs认证 不符合 不符合 不符合
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
零件包装代码 DO-200 DO-200 DO-200
包装说明 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
针数 2 2 2
Reach Compliance Code compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 SNUBBER DIODE, FREEWHEELING DIODE SNUBBER DIODE, FREEWHEELING DIODE SNUBBER DIODE, FREEWHEELING DIODE
应用 HIGH VOLTAGE FAST RECOVERY HIGH POWER HIGH VOLTAGE FAST RECOVERY HIGH POWER HIGH VOLTAGE FAST RECOVERY HIGH POWER
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 2.23 V 2.6 V 2.23 V
JEDEC-95代码 DO-200AC DO-200AC DO-200AC
JESD-30 代码 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
最大非重复峰值正向电流 26180 A 23000 A 26180 A
元件数量 1 1 1
相数 1 1 1
端子数量 2 2 2
最高工作温度 150 °C 150 °C 150 °C
最大输出电流 1825 A 1650 A 1825 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED 225
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 2500 V 2500 V 2200 V
最大反向恢复时间 2 µs 3 µs 2 µs
表面贴装 YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD
端子位置 END END END
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
JESD-609代码 e0 e0 -
端子面层 TIN LEAD TIN LEAD -
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