UV Enhanced
UV Enhanced PIN Photodiodes
Specifications
Responsivity:
Series Resistance:
Part Number
0.10 A/W minimum, 0.18 A/W typical @ 365nm
100Ω maximum (measured by applying +10mA to photodiode and measuring voltage across anode and cathode)
Active Area
Storage &
Operating Temp.
Shunt Resistance
Dark Current1
@ 5V
(typ)
(nA)
(max)
(nA)
Breakdown
Voltage2
@ 10µ A
(typ)
(V)
Capacitance3
(typ)
at 0V
(pF)
at 5V
(pF)
NEP4
Max. Linear
Current5
(typ)
(mA)
Response
Time6
@ 5V
(typ)
(nsec)
.
SD 172-13-23-222
in.
(mm)
0.185 x 0.125
(4.7 x 3.8)
0.200 (dia.)
(5.08 dia.)
0.300 x 0.220
(7.62 x 5.58)
0.394 x 0.394
(10 x 10)
(C° )
(min)
(M-Ohm)
(typ)
(W/√ Hz)
-40 to 110
105
4.4
19
10
255
75
7.2x10-14
8.9x10-14
1.3x10-13
1.9x10-13
1.5
30
SD 200-13-23-242
-40 to 110
77
6.0
30
10
345
102
2.03
45
SD 290-13-23-242
-40 to 110
36
12.5
50
10
723
215
4.86
70
SD 445-13-23-305
1.
-20 to 75
15
30.0
120
10
1700
500
10.0
200
Dark Current and Shunt Resistance vary with temperature as follows: for T>23° C, I
D
=1.09
∆
T
I
D23,
R
SH
=0.9
∆
T
R
SH23
and for T<23° C,
I
D
=I
D23
/1.09
∆
T
, R
SH
=R
SH23
/0.9
∆
T
, where
∆
T is the temperature difference from 23° C, and I
D23
and R
SH23
are the dark current and shunt
resistance at 23° C.
2.
Typical values listed. Minimum value shall be 50% of typical.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Test conditions are V =10mV and 365nm.
B
5.
Maximum linear current specifies the level above which the output current deviates more than 10%. Short circuit current saturates at
approximately 10 times this level.
6.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50W load. Shorter wavelengths will result
in faster rise and fall times
file:///D|/WEB SITES/API/TMPlhtd1gkwnn.htm (1 of 2) [7/16/2001 11:28:40 AM]
UV Enhanced
file:///D|/WEB SITES/API/TMPlhtd1gkwnn.htm (2 of 2) [7/16/2001 11:28:40 AM]
