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SD200N12MV

DIODE 200 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC, METAL GLASS, DO-30, 1 PIN, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
厂商名称
Vishay(威世)
零件包装代码
DO-30
包装说明
O-MUPM-H1
针数
1
Reach Compliance Code
unknown
其他特性
HIGH SURGE CAPABILITY
应用
HIGH VOLTAGE HIGH POWER
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-205AC
JESD-30 代码
O-MUPM-H1
最大非重复峰值正向电流
4920 A
元件数量
1
相数
1
端子数量
1
最高工作温度
180 °C
最低工作温度
-40 °C
最大输出电流
200 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
1200 V
表面贴装
NO
端子形式
HIGH CURRENT CABLE
端子位置
UPPER
文档预览
Bulletin I2080 rev. B 11/01
SD200N/R SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2400V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
200A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
Parameters
SD200N/R
400 to 2000
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
200
110
314
4700
4920
110
101
400 to 2000
- 40 to 180
2400
200
110
314
4700
4920
110
101
2400
150
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
Units
case style
DO-205AC (DO-30)
www.irf.com
1
SD200N/R Series
Bulletin I2080 rev. B 11/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
SD200N/R
08
12
16
20
24
V
RRM
, maximum repetitive
peak reverse voltage
V
400
800
1200
1600
2000
2400
V
RSM
, maximum non-
repetitive peak rev. voltage
V
500
900
1300
1700
2100
2500
I
RRM
max.
@ T
J
= T
J
max.
mA
15
Forward Conduction
Parameter
I
F(AV)
I
F(AV)
Max. average forward current
@ Case temperature
Max. average forward current
@ Case temperature
I
F(RMS)
Max. RMS forward current
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
SD200N/R
200
110
220
100
314
4700
4920
3950
4140
Units Conditions
A
°C
A
°C
A
DC @ 95°C case temperature
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
180° conduction, half sine wave
180° conduction, half sine wave
I
2
t
Maximum I
2
t for fusing
110
101
78
71
I
2
√t
Maximum I
2
√t
for fusing
1100
0.90
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
r
f
2
V
FM
Low level value of forward
slope resistance
High level value of forward
slope resistance
Max. forward voltage drop
V
1.00
(I >
π
x I
F(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
mΩ
0.64
1.40
V
(I >
π
x I
F(AV)
),T
J
= T
J
max.
I
pk
= 630A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
0.79
2
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
case to heatsink
T
wt
Max. allowed mounting torque ±10%
Approximate weight
Case style
14
120
DO-205AC(DO-30)
Nm
g
See Outline Table
SD200N/R
400 to 2000
-40 to 180
-55 to 200
0.23
0.08
2400
150
Units
°C
Conditions
K/W
DC operation
Mounting surface, smooth, flat and
greased
Not lubricated threads
R
thCS
Max. thermal resistance,
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.041
0.049
0.063
0.093
0.156
0.030
0.051
0.068
0.096
0.157
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
SD
1
20
2
0
3
N
4
24
5
P
6
B
7
C
8
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
0 = Standard recovery
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
B = Flag top terminal (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Non isolated lead
8
-
C = Ceramic Housing (over 1600V)
V = Glass-metal seal (only up to 1600V)
www.irf.com
3
SD200N/R Series
Bulletin I2080 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
MAX.
6.5 (0.26) MIN.
35 (1.38)
MAX.
C.S. 16mm
(0.015 s.i.)
2
SW 27
2.6 (0.10) MAX.
DIA. 8.5 (0.33) NOM.
157 (6.18)
170 (6.69)
55 (2.16) MIN.
DIA. 22.5 (0.88) MAX.
29 (1.14)
MAX.
21 (0.82)
MAX.
12.5 (0.49)
MAX.
Conforms to JEDEC DO-205AC (DO-30)
1/2"-20UNF-2A*
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M12 X 1.75
GLASS-METAL SEAL
16.5 (0.65)
MAX.
6.5 (0.26) MIN.
35 (1.38)
MAX.
C.S. 16mm
(0.015 s.i.)
2
2.6 (0.10) MAX
DIA. 8.5 (0.33) NOM.
157 (6.18)
170 (6.69)
55 (2.16) MIN.
DIA. 23.5 (0.93) MAX.
24 (0.94)
MAX.
21 (0.82)
MAX.
12.5 (0.49)
MAX.
SW 27
1/2"-20UNF-2A*
* FOR METRIC DEVICE: M12 X 1.75
4
www.irf.com
SD200N/R Series
Bulletin I2080 rev. B 11/01
Outline Table
CERAMIC HOUSING
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
9.5 (0.37)
45 (1.77)
DIA. 22.5 (0.88) MAX.
29 (1.14)
M AX.
12.5 (0.49)
21 (0.82)
MAX .
MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
2.4 (0.09)
27 (1.06)
40.5 (1.59) MAX .
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
9.5 (0.37)
DIA. 23.5 (0.93) MAX.
36.5 (1.44)
1/2"-20UNF-2A*
2.4 (0.09)
24 (0.94)
MAX.
21 (0.82)
MAX.
27 (1.06)
12.5 (0.49)
MAX.
41 (1.61) MAX.
*FOR METRIC DEVICE. M12 X 1.75
www.irf.com
5
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