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SD303C04S10CPBF

Rectifier Diode, 1 Phase, 1 Element, 350A, 400V V(RRM), Silicon, DO-200AA, PUK-2

器件类别：分立半导体    二极管   

厂商名称：International Rectifier （ Infineon ）

厂商官网：http://www.irf.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
International Rectifier （ Infineon ）
零件包装代码
DO-200AA
包装说明
O-CEDB-N2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
FREEWHEELING DIODE, SNUBBER DIODE
应用
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
2.26 V
JEDEC-95代码
DO-200AA
JESD-30 代码
O-CEDB-N2
最大非重复峰值正向电流
6040 A
元件数量
1
相数
1
端子数量
2
最大输出电流
350 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
2.4 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
40
文档预览
Bulletin I2066 rev. C 04/00
SD303C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Hockey Puk Version
350A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
case style DO-200AA
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
t
rr
range
@ T
J
T
J
SD303C..C
350
55
550
25
5770
6040
166
152
400 to 2500
1.0 to 2.0
25
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
°C
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1
SD303C..C Series
Bulletin I2066 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
V
RRM
max. repetitive
Code
peak and off-state voltage
V
04
SD303C..S10C
08
10
12
SD303C..S15C
14
16
SD303C..S20C
20
25
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1100
1300
1500
1700
2100
2600
I
RRM
max.
T
J
= 125°C
mA
35
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ Heatsink temperature
I
F(RMS)
Max. RMS current
I
FSM
Max. peak, one-cycle
non-repetitive forward current
SD303C..C
350(175)
55(75)
550
5770
6040
4850
5080
Units
A
°C
A
Conditions
180° conduction, half sine wave.
Double side (single side) cooled
@ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
A
t = 10ms
t = 8.3ms
t = 10ms
I t
2
Maximum I t for fusing
2
166
152
117
107
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
1660
1.14
1.63
1.14
0.77
2.26
KA
√s
V
mΩ
V
2
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 1100A, T
J
= 25°C, t
p
= 10ms sinusoidal wave
V
F(TO)1
Low level of threshold voltage
V
F(TO)
2
High level of threshold voltage
r
f1
r
f2
V
FM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
Recovery Characteristics
Code
T
J
= 25
o
C
typical t
(µs)
rr
Test conditions
I
pk
Max. values @ T
J
= 125 °C
V
r
di/dt
(A/µs)
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
(A)
(V)
@ 25% I
RRM
(µs)
2.4
(µC)
52
90
107
(A)
33
44
46
S10
S15
S20
1.0
1.5
2.0
750
25
-30
2.9
3.2
2
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SD303C..C Series
Bulletin I2066 rev. C 04/00
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
SD303C..C
-40 to 125
-40 to 150
0.16
0.08
4900
(500)
Units Conditions
°C
DC operation single side cooled
K/W
N
(Kg)
g
See Outline Table
DC operation double side cooled
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
F
Mounting force, ± 10%
wt
Approximate weight
Case style
70
DO-200AA
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side
0.010
0.012
0.016
0.024
0.042
0.011
0.013
0.016
0.024
0.042
Single Side Double Side
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
SD
1
30
2
3
3
C
4
25 S20
5
6
C
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic Puk
Voltage code: Code x 100 = V
RRM
(see Voltage Ratings table)
t
rr
code (see Recovery Characteristics table)
C = Puk Case DO-200AA
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3
SD303C..C Series
Bulletin I2066 rev. C 04/00
Outline Table
3.5(0.14) ± 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
19(0.75) DIA. MAX.
TWO PLACES
0.3 (0.01) MIN.
BOTH ENDS
4 2 (1.65 ) D IA . M A X .
1 4.4 (0 .5 7)
13 .7 (0. 54 )
Case Style DO-200AA
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
38 (1.50) DIA. MAX.
Maxim um Allow able Heatsink Tem perature (°C)
120
110
100
90
80
70
60
0
20
40
60
SD303C..C Series
(Sin gle Side Cooled)
R
th J-hs
(DC) = 0.16 K/W
M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C )
130
1 30
1 20
1 10
1 00
90
80
70
60
50
0
50
10 0
150
2 00
250
3 00
A v e ra g e F o r w a rd C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
C o ndu c tio n P e rio d
S D 3 0 3 C ..C S e rie s
(S in g le Sid e C o o le d )
R
thJ-hs
(D C ) = 0 .1 6 K /W
C o nduc tio n A ng le
30°
60°
90°
120°
180°
DC
180°
30°
60°
90°
120°
80 100 120 140 160 180
Averag e Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
4
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SD303C..C Series
Bulletin I2066 rev. C 04/00
Maxim um Allow able Heatsink Tem perature (°C)
130
120
110
100
90
80
70
60
50
40
0
50
100 150 200 250 300 350 400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
C o nduc tio n A ng le
Maximum Allow able Heatsink Temperature (°C)
SD303C..C Series
(D ouble Side Cooled)
R
thJ-h s
(DC) = 0.08 K/W
130
120
110
100
90
80
70
60
50
40
0
100
200
300
400
500
600
Average Forwa rd Curren t (A)
Fig. 4 - Current Ratings Characteristics
C o ndu c tio n Pe rio d
SD303C..C Series
(D ouble Side Cooled)
R
th J- hs
(DC) = 0.08 K/W
30°
30°
60°
90°
60°
90°
120°
180°
DC
120°
180°
M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W )
M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )
8 00
7 00
6 00
5 00
4 00
3 00
C o nduc tio n An g le
1 00 0
9 00
8 00
7 00
6 00
DC
1 80°
1 20°
90°
60°
30°
1 80°
1 20°
90°
60°
30°
R M S Lim it
5 0 0 R M S Lim it
4 00
3 00
2 00
1 00
0
0
100
2 00
3 00
400
5 00
6 00
A v e ra g e Fo rw a rd C u r re n t (A )
Fig. 6 - Forward Power Loss Characteristics
C o ndu ct io n Pe rio d
2 00
1 00
0
0
50
1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00
A v e ra g e F o rw a rd C u rre n t (A )
Fig. 5 - Forward Power Loss Characteristics
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5 °C
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5 °C
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A )
55 0 0
50 0 0
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
1
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith
R a t e d V
RRM
A p p lie d F o llo w in g Su rg e .
In itia l T
J
= 1 2 5 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
6000
5500
5000
4500
4000
3500
3000
2500
2000
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t
V e r su s P u lse T ra in D u ra t io n .
In itia l T
J
= 1 2 5 ° C
N o V o lt a g e R e a p p lie d
R a t e d V
RR M
R e a p p lie d
SD 3 0 3 C ..C Se r ie s
10
1 00
S D 3 0 3 C ..C Se rie s
0.1
P u lse T ra in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
1500
0.01
1
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
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参数对比
与SD303C04S10CPBF相近的元器件有：SD303C14S15CPBF、SD303C20S20CPBF、SD303C08S10CPBF、SD303C12S15CPBF、SD303C10S10CPBF、SD303C16S15CPBF、SD303C25S20CPBF。描述及对比如下：
型号 SD303C04S10CPBF SD303C14S15CPBF SD303C20S20CPBF SD303C08S10CPBF SD303C12S15CPBF SD303C10S10CPBF SD303C16S15CPBF SD303C25S20CPBF
描述 Rectifier Diode, 1 Phase, 1 Element, 350A, 400V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 1400V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 2000V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 800V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 1200V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 1000V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 1600V V(RRM), Silicon, DO-200AA, PUK-2 Rectifier Diode, 1 Phase, 1 Element, 350A, 2500V V(RRM), Silicon, DO-200AA, PUK-2
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ） International Rectifier （ Infineon ）
零件包装代码 DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA
包装说明 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
针数 2 2 2 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE FREEWHEELING DIODE, SNUBBER DIODE
应用 HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 2.26 V 2.26 V 2.26 V 2.26 V 2.26 V 2.26 V 2.26 V 2.26 V
JEDEC-95代码 DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA DO-200AA
JESD-30 代码 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
最大非重复峰值正向电流 6040 A 6040 A 6040 A 6040 A 6040 A 6040 A 6040 A 6040 A
元件数量 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最大输出电流 350 A 350 A 350 A 350 A 350 A 350 A 350 A 350 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
峰值回流温度（摄氏度） 260 260 260 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 1400 V 2000 V 800 V 1200 V 1000 V 1600 V 2500 V
最大反向恢复时间 2.4 µs 2.9 µs 3.2 µs 2.4 µs 2.9 µs 2.4 µs 2.9 µs 3.2 µs
表面贴装 YES YES YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 END END END END END END END END
处于峰值回流温度下的最长时间 40 40 40 40 40 40 40 40
是否无铅 - 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
最高工作温度 - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
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