SD303C12S15CPBF,SD303C12S15CPBF pdf中文资料,SD303C12S15CPBF引脚图,SD303C12S15CPBF电路-Datasheet-电子工程世界

文档预览

Bulletin I2066 rev. C 04/00

SD303C..C SERIES

FAST RECOVERY DIODES

Features

High power FAST recovery diode series

1.0 to 2.0 µs recovery time

High voltage ratings up to 2500V

High current capability

Optimized turn on and turn off characteristics

Low forward recovery

Fast and soft reverse recovery

Press-puk encapsulation

Case style conform to JEDEC DO-200AA

Maximum junction temperature 125°C

Hockey Puk Version

350A

Typical Applications

Snubber diode for GTO

High voltage free-wheeling diode

Fast recovery rectifier applications

case style DO-200AA

Major Ratings and Characteristics

Parameters

F(AV)

@ T

F(RMS)

@ T

FSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

RRM

range

@ T

SD303C..C

350

550

5770

6040

166

152

400 to 2500

1.0 to 2.0

- 40 to 125

Units

°C

µs

°C

www.irf.com

SD303C..C Series

Bulletin I2066 rev. C 04/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

Voltage

RRM

max. repetitive

Code

peak and off-state voltage

SD303C..S10C

SD303C..S15C

SD303C..S20C

400

800

1000

1200

1400

1600

2000

2500

RSM

, maximum non-

repetitive peak voltage

500

900

1100

1300

1500

1700

2100

2600

RRM

max.

= 125°C

Forward Conduction

Parameter

F(AV)

Max. average forward current

@ Heatsink temperature

F(RMS)

Max. RMS current

FSM

Max. peak, one-cycle

non-repetitive forward current

SD303C..C

350(175)

55(75)

550

5770

6040

4850

5080

Units

°C

Conditions

180° conduction, half sine wave.

Double side (single side) cooled

@ 25°C heatsink temperature double side cooled

t = 10ms

t = 8.3ms

No voltage

reapplied

100% V

RRM

reapplied

No voltage

reapplied

100% V

RRM

reapplied

Sinusoidal half wave,

Initial T

= T

max.

t = 10ms

t = 8.3ms

t = 10ms

I t

Maximum I t for fusing

166

152

117

107

t = 8.3ms

t = 10ms

t = 8.3ms

√t

Maximum I

√t

for fusing

1660

1.14

1.63

1.14

0.77

2.26

√s

mΩ

t = 0.1 to 10ms, no voltage reapplied

(16.7% x

x I

F(AV)

< I <

x I

F(AV)

), T

= T

max.

(I >

x I

F(AV)

), T

= T

max.

(16.7% x

x I

F(AV)

< I <

x I

F(AV)

), T

= T

max.

(I >

x I

F(AV)

), T

= T

max.

= 1100A, T

= 25°C, t

= 10ms sinusoidal wave

F(TO)1

Low level of threshold voltage

F(TO)

High level of threshold voltage

Low level of forward slope resistance

High level of forward slope resistance

Max. forward voltage

Recovery Characteristics

Code

= 25

typical t

(µs)

Test conditions

Max. values @ T

= 125 °C

di/dt

(A/µs)

@ 25% I

RRM

Square Pulse

(A)

(V)

@ 25% I

RRM

(µs)

2.4

(µC)

107

(A)

S10

S15

S20

1.0

1.5

2.0

750

-30

2.9

3.2

www.irf.com

SD303C..C Series

Bulletin I2066 rev. C 04/00

Thermal and Mechanical Specifications

Parameter

stg

SD303C..C

-40 to 125

-40 to 150

0.16

0.08

4900

(500)

Units Conditions

°C

DC operation single side cooled

K/W

(Kg)

See Outline Table

DC operation double side cooled

Max. operating temperature range

Max. storage temperature range

thJ-hs

Max. thermal resistance,

junction to heatsink

Mounting force, ± 10%

Approximate weight

Case style

DO-200AA

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Conduction angle

180°

120°

90°

60°

30°

Sinusoidal conduction Rectangular conduction

Single Side Double Side

0.010

0.012

0.016

0.024

0.042

0.011

0.013

0.016

0.024

0.042

Single Side Double Side

0.008

0.013

0.018

0.025

0.042

0.008

0.013

0.018

0.025

0.042

Units

Conditions

K/W

= T

max.

Ordering Information Table

Device Code

25 S20

Diode

Essential part number

3 = Fast recovery

C = Ceramic Puk

Voltage code: Code x 100 = V

RRM

(see Voltage Ratings table)

code (see Recovery Characteristics table)

C = Puk Case DO-200AA

www.irf.com

SD303C..C Series

Bulletin I2066 rev. C 04/00

Outline Table

3.5(0.14) ± 0.1(0.004) DIA. NOM.x

1.8 (0.07) DEEP MIN. BOTH ENDS

19(0.75) DIA. MAX.

TWO PLACES

0.3 (0.01) MIN.

BOTH ENDS

4 2 (1.65 ) D IA . M A X .

1 4.4 (0 .5 7)

13 .7 (0. 54 )

Case Style DO-200AA

All dimensions in millimeters (inches)

Quote between upper and lower

pole pieces has to be considered

after application of Mounting Force

(see Thermal and Mechanical

Specification)

38 (1.50) DIA. MAX.

Maxim um Allow able Heatsink Tem perature (°C)

120

110

100

SD303C..C Series

(Sin gle Side Cooled)

th J-hs

(DC) = 0.16 K/W

M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C )

130

1 30

1 20

1 10

1 00

10 0

150

2 00

250

3 00

A v e ra g e F o r w a rd C u rre n t (A )

Fig. 2 - Current Ratings Characteristics

C o ndu c tio n P e rio d

S D 3 0 3 C ..C S e rie s

(S in g le Sid e C o o le d )

thJ-hs

(D C ) = 0 .1 6 K /W

C o nduc tio n A ng le

30°

60°

90°

120°

180°

30°

60°

90°

120°

80 100 120 140 160 180

Averag e Forw ard Current (A)

Fig. 1 - Current Ratings Characteristics

www.irf.com

SD303C..C Series

Bulletin I2066 rev. C 04/00

Maxim um Allow able Heatsink Tem perature (°C)

130

120

110

100

100 150 200 250 300 350 400

Average Forward Curren t (A)

Fig. 3 - Current Ratings Characteristics

C o nduc tio n A ng le

Maximum Allow able Heatsink Temperature (°C)

SD303C..C Series

(D ouble Side Cooled)

thJ-h s

(DC) = 0.08 K/W

130

120

110

100

200

300

400

500

600

Average Forwa rd Curren t (A)

Fig. 4 - Current Ratings Characteristics

C o ndu c tio n Pe rio d

SD303C..C Series

(D ouble Side Cooled)

th J- hs

(DC) = 0.08 K/W

30°

60°

90°

60°

90°

120°

180°

120°

180°

M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W )

M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )

8 00

7 00

6 00

5 00

4 00

3 00

C o nduc tio n An g le

1 00 0

9 00

8 00

7 00

6 00

1 80°

1 20°

90°

60°

30°

1 80°

1 20°

90°

60°

30°

R M S Lim it

5 0 0 R M S Lim it

4 00

3 00

2 00

1 00

100

2 00

3 00

400

5 00

6 00

A v e ra g e Fo rw a rd C u r re n t (A )

Fig. 6 - Forward Power Loss Characteristics

C o ndu ct io n Pe rio d

2 00

1 00

1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00

A v e ra g e F o rw a rd C u rre n t (A )

Fig. 5 - Forward Power Loss Characteristics

SD 3 0 3 C ..C Se rie s

= 1 2 5 °C

SD 3 0 3 C ..C Se rie s

= 1 2 5 °C

P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )

P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A )

55 0 0

50 0 0

45 0 0

40 0 0

35 0 0

30 0 0

25 0 0

20 0 0

A t A n y Ra t e d Lo a d C o n d it io n A n d W ith

R a t e d V

RRM

A p p lie d F o llo w in g Su rg e .

In itia l T

= 1 2 5 °C

@ 6 0 H z 0 .0 0 8 3 s

@ 5 0 H z 0 .0 1 0 0 s

6000

5500

5000

4500

4000

3500

3000

2500

2000

M a x im u m N o n R e p e t itiv e S u rg e C u rre n t

V e r su s P u lse T ra in D u ra t io n .

In itia l T

= 1 2 5 ° C

N o V o lt a g e R e a p p lie d

R a t e d V

RR M

R e a p p lie d

SD 3 0 3 C ..C Se r ie s

1 00

S D 3 0 3 C ..C Se rie s

0.1

P u lse T ra in D u ra t io n (s)

Fig. 8 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

1500

0.01

N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )

Fig. 7 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

www.irf.com

参数对比

与SD303C12S15CPBF相近的元器件有：SD303C14S15CPBF、SD303C20S20CPBF、SD303C08S10CPBF、SD303C10S10CPBF、SD303C16S15CPBF、SD303C25S20CPBF、SD303C04S10CPBF。描述及对比如下：

型号	SD303C12S15CPBF	SD303C14S15CPBF	SD303C20S20CPBF	SD303C08S10CPBF	SD303C10S10CPBF	SD303C16S15CPBF	SD303C25S20CPBF	SD303C04S10CPBF
描述	Rectifier Diode, 1 Phase, 1 Element, 350A, 1200V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 1400V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 2000V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 800V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 1000V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 1600V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 2500V V(RRM), Silicon, DO-200AA, PUK-2	Rectifier Diode, 1 Phase, 1 Element, 350A, 400V V(RRM), Silicon, DO-200AA, PUK-2
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA
包装说明	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
针数	2	2	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE	FREEWHEELING DIODE, SNUBBER DIODE
应用	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY	HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	2.26 V	2.26 V	2.26 V	2.26 V	2.26 V	2.26 V	2.26 V	2.26 V
JEDEC-95代码	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA	DO-200AA
JESD-30 代码	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
最大非重复峰值正向电流	6040 A	6040 A	6040 A	6040 A	6040 A	6040 A	6040 A	6040 A
元件数量	1	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2
最大输出电流	350 A	350 A	350 A	350 A	350 A	350 A	350 A	350 A
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	1200 V	1400 V	2000 V	800 V	1000 V	1600 V	2500 V	400 V
最大反向恢复时间	2.9 µs	2.9 µs	3.2 µs	2.4 µs	2.4 µs	2.9 µs	3.2 µs	2.4 µs
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	END	END	END	END	END	END	END	END
处于峰值回流温度下的最长时间	40	40	40	40	40	40	40	40
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	-
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	-
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-

这个程序能否实现蜂鸣器的嘀嘀嘀的间歇鸣叫？: 这个程序能否实现蜂鸣器的嘀嘀嘀的间歇鸣叫？ \0\0\0eeworldpostqq 这个程序能否实...; 通通 FPGA/CPLD

☆★☆★☆★【电子设计】资料收藏区(2012.03更新)！！！☆★☆★☆★: 作为新的版主，为了活跃此版，我会努力地!!!虽然没有机会再参加下届的全国大学生电子设计竞赛了，但是...; open82977352 电子竞赛

帮忙看看我写的频率计为什么没反应？: #include reg52.h #define uchar unsigned char #def...; 1614048761 51单片机

SD WIFI驱动开发：加载SDHC驱动提示系统无法打开指定设备或文件: 大虾们，帮帮忙啊小弟最近在搞SD WIFI驱动，SDHC是根据sc2410的SDHC改过来的，SD...; yefeiping 嵌入式系统

【CN0142】将宽带互补DAC输出转换为单端信号的高CMRR电路，无需精密电阻: 电路功能与优势将宽带DAC互补电流输出转换为单端信号的传统方法是使用中心抽头变压器，或者在差分...; EEWORLD社区 ADI参考电路

Multisum 12.0 和13.0破解安装，以及安装包: 前几天买了SSD，一重装了系统，一些软件就不能用了，所以花时间又重新装了一些软件，发现有的...; logitech66 模拟电子