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SDR2040UFS

Rectifier Diode, 1 Phase, 1 Element, 10A, 400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

下载文档
器件参数
参数名称
属性值
包装说明
E-XALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW LEAKAGE CURRENT
应用
ULTRA FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.65 V
JESD-30 代码
E-XALF-W2
最大非重复峰值正向电流
300 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
10 A
封装主体材料
UNSPECIFIED
封装形状
ELLIPTICAL
封装形式
LONG FORM
最大重复峰值反向电压
400 V
最大反向电流
5 µA
最大反向恢复时间
0.045 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR2030UF thru
SDR2060UF Series
20 AMP
Ultra Fast Rectifier
300 - 600 Volts
45 nsec
Features:
Replaces DO-4 and DO-5
Ultra Fast Recovery
Low Reverse Leakage Current
3/
Hermetically Sealed Void-Free Construction
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Higher Voltages Available - Contact Factory
Replacement for MSARS20E060G
TX, TXV, and Space Level Screening Available
Designer’s Data Sheet
Part Number / Ordering Information
1/
SDR20 __ __ __ __
│ │ │ └
Screening
2/
│ │ │
__
= Not Screened
TX = TX Level
│ │ │
TXV = TXV
│ │ │
S = S Level
│ │ │
│ │ └
Package Type
= Axial
│ │
BT = Cathode Button
│ │
BTR = Anode Button
│ │
│ └
Reverse Recovery
UF = Ultra Fast
Voltage
30 = 300 V
40 = 400 V
50 = 500 V
60 = 600 V
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave)
Symbol
SDR2030UFBT
SDR2040UFBT
SDR2050UFBT
SDR2060UFBT
Button @Tc
100°C
Axial @T
L
55°C
Value
300
400
500
600
20
10
300
-65 to +175
2.0
2.2
6.0
Units
Volts
V
RRM
V
RWM
V
R
I
O
I
FSM
T
op
& T
stg
Amps
Amps
o
Peak Surge Current
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
o
Pulses, T
A
=25 C)
Operating and Storage Temperature
Maximum Thermal Resistance
BT Button
BTR Button
Axial @ 0.25”
C
R
JC
R
JC
R
JL
Axial
o
C/W
Notes:
1/
For ordering information, price, operating curves, and availability,
contact factory.
2/
Screening based on MIL-PRF-19500. Screening flows available on
request.
3/
PIND testing not required on void free devices per MIL-PRF-19500.
Button
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR2030UF thru
SDR2060UF Series
(Ta = 25
o
C unless specified)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
I
F
= 5A pulsed
Symbol
V
F1
V
F2
V
F3
V
F4
V
F5
V
F4
I
R1
I
R2
BVR
C
J
t
rr
Dim
A
A1
B
C
C1
P1
P2
P3
P4
T
R
DIM
A
B
C
D
Max
1.25
1.40
1.65
2.05
1.70
1.45
5
500
Rated
80
45
Unit
V
V
V
V
V
V
A
A
V
(min)
pF
nsec
Max
0.165”
0.020”
0.165”
0.210”
Instantaneous Forward Voltage Drop
I
F
= 10A pulsed
Instantaneous Forward Voltage Drop
I
F
= 20A pulsed
Instantaneous Forward Voltage Drop
I
F
= 20A pulsed T
A
= -55
o
C
Instantaneous Forward Voltage Drop
I
F
= 20A pulsed T
A
= 125
o
C
I
F
= 10A pulsed T
A
= -55
o
C
Rated V
R
, pulsed
Instantaneous Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
Rated V
R
, pulsed, T
A
= 125
o
C)
I
R
, = 100
A
Minimum Breakdown Voltage
Junction Capacitance
(V
R
=10 V
DC
, f = 1MHz, T
A
= 25
o
C)
Reverse Recovery Time
(I
F
= 0.5A, I
R
= 1.0 A, I
RR
= 0.25A, T
A
= 25
o
C)
CASE OUTLINES:
Button
Min
0.150”
0.135”
0.190”
0.280” REF
0.110”
0.055”
0.090”
0.065”
0.008”
0.130”
0.075”
0.110”
0.012”
0.015” REF
MIN
0.135”
0.150”
0.057”
.500”
MAX
0.165”
0.180”
0.062”
––
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0146C
DOC
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