SDR30U080J thru SDR30U120J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
and
SDR40U080M thru SDR40U120M
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SDR55
1/
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│
│
│
│
│
│
│
│
│
│
│
│
│
└
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│
│
│
│
│
│
│
│
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└
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30/40 AMP
Ultra Fast Recovery
Rectifier
800 - 1200 Volts
50 nsec
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
J = TO-257
M = TO-254
Features:
•
•
•
•
•
•
•
•
•
Ultra Fast Recovery: 40 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
•
TX, TXV, Space Level Screening Available Consult
Factory.
2/
Voltage/Family
80 = 800V
90 = 900V
100 = 1000V
110= 1100V
120 = 1200V
Recovery Time
UF = Ultra Fast
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR30U080/SDR40U080
SDR30U090/SDR40U090
SDR30U100/SDR40U100
SDR30U110/SDR40U110
SDR30U120/SDR40U120
3/
Symbol
V
RRM
V
RWM
V
R
Io
Value
800
900
1000
1100
1200
30
40
250
-65 to +200
1.25
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
TO-257
TO-254
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
3/
Reach Equilibrium Between Pulses, T
A
= 25ºC)
I
FSM
Top & Tstg
R
θJE
TO-254 (M)
Amps
ºC
ºC/W
TO-257 (J)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
3/
1/ For ordering information, price, operating curves, and availability - Contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Pins 2 & 3 connected.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0143A
DOC
SDR30U080J thru SDR30U120J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
and
SDR40U080M thru SDR40U120M
Symbol
I
F
= 5Adc
I
F
= 10Adc
I
F
= 20Adc
I
F
= 30Adc
I
F
= 50Adc
I
F
= 5Adc
I
F
= 10Adc
I
F
= 20Adc
I
F
= 30Adc
I
F
= 50Adc
I
F
= 5Adc
I
F
= 10Adc
I
F
= 20Adc
I
F
= 30Adc
I
F
= 50Adc
V
F1
Electrical Characteristics
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300
μsec
pulse)
Typ
1.65
1.73
1.85
1.92
2.1
1.7
1.75
1.85
1.92
2.05
1.12
1.3
1.52
1.65
1.88
20
1.5
5
15
50
45
35
100
50
3.7
110
6
Max
--
1.9
2.1
2.2
2.5
--
1.95
2.1
2.2
2.5
--
1.6
1.8
2.0
2.35
100
--
20
--
--
75
50
--
--
--
--
--
Units
Volts
Instantaneous Forward Voltage Drop
(T
A
= -55ºC, 300
μsec
pulse)
V
F2
Volts
Instantaneous Forward Voltage Drop
(T
A
= 125ºC, 300
μsec
pulse)
V
F3
Volts
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300
μsec
pulse minimum)
I
R1
μA
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300
μsec
pulse minimum)
(Rated V
R
, T
A
= 125ºC, 300
μsec
pulse minimum)
(Rated V
R
, T
A
= 150ºC, 300
μsec
pulse minimum)
I
R2
mA
Junction Capacitance
(V
R
= 5 Vdc, T
A
= 25ºC, f = 1MHz)
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
C
J
T
A
= 25ºC
T
A
= 100ºC
T
A
= 25ºC
T
A
= 25ºC
T
A
= 100ºC
T
A
= 100ºC
t
rr1
t
rr2
t
rr3
I
RM3
t
rr4
I
RM4
pF
nsec
nsec
nsec
A
nsec
A
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
(I
F
= 10 A, dI
F
/dt = 100A/us)
Case Outline: TO-254
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Case Outline: TO-257
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Note 1: Pin 2&3 connected together
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0143A
DOC
单片机
