Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR4405 thru SDR4431
10 Amp
Hyper Fast Recovery Rectifier
50 - 300 Volts
40 nsec
Features
:
Hyper fast recovery: 40 nsec maximum
PIV to 300 volts
Mini 4-40 UNC stud package
Hermetically sealed
Void free construction
For high efficiency applications
Replaces 1N5811 types
TX, TXV, and Space Level Screening Available
3/
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR44
__ __ __
│ │ └
Screening
3/
│ │
__
= Not Screened
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ └
Package
C = Ministud
│
V = Isolated Ministud
│
└
Voltage
05 (C), 06 (V) = 50 V
10 (C), 11 (V) = 100 V
20 (C), 21 (V) = 200 V
30 (C), 31 (V) = 300 V
Maximum Ratings
2/
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25°C)
SDR4405 (C), SDR4406 (V)
SDR4410 (C), SDR4411 (V)
SDR4420 (C), SDR4421 (V)
SDR4430 (C), SDR4431 (V)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
STG
R
θJC
Value
50
100
200
300
10
125
-65 to +175
7.5
Units
Volts
Amps
Amps
°C
°C/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I
O
, allow junction to
reach equilibrium between pulses, T
A
= 25°C)
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Notes:
1/ For ordering information, price, operating curves, and availability -
contact factory.
2/ Unless otherwise specified, all electrical characteristics @ 25°C
3/ Screening based on MIL-PRF-19500. Screening flows available on
request.
Ministud (C)
Isolated
Ministud (V)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0097B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR4405 thru SDR4431
Symbol
V
F1
V
F2
I
R1
I
R2
C
J
t
RR
Electrical Characteristics
2/
Instantaneous Forward Voltage Drop
(I
F
= 10 Adc, T
A
= 25°C, 300
μs
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 10 Adc, T
A
= -55
°
C, 300
μs
pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25°C, 300
μs
pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100°C, 300
μs
pulse minimum)
Junction Capacitance
(V
R
= 10 V
DC
, T
A
= 25°C, f = 1 MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 A, I
RR
= 250 mA, T
A
= 25°C)
Max
1.1
1.2
20
1
100
40
Units
V
DC
V
DC
μA
mA
pF
nsec
CASE OUTLINE: MINISTUD (C)
CASE OUTLINE: ISOLATED MINISTUD (V)
TYPICAL OPERATING CURVES
TA = 25°C unless otherwise specified
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0097B
DOC
测试/测量
