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SDR621ZUBS

Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

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器件参数
参数名称
属性值
厂商名称
SSDI
零件包装代码
TO-254Z
包装说明
HERMETIC SEALED, TO-254Z, 3 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
HYPER FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
S-XSFM-P3
最大非重复峰值正向电流
300 A
元件数量
1
相数
1
端子数量
3
最大输出电流
20 A
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
PIN/PEG
端子位置
SINGLE
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR620J, M & Z
Thru
SDR622J, M & Z
Part Number/Ordering Information
1/
SDR620
__ __ __ __
Designer’s Data Sheet
│ │
Screening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
Leg Bend Option
__ = Straight
(See Figure 1)
DB = Down Bend
UB = Up Bend
Package
J = TO-257
M = TO-254
Z = TO-254Z
20A, 35nsec, 100-200 V
Hyper Fast Rectifier
Features
:
Pin Configuration
__ = Normal
(See Table 1)
R = Reverse
SDR621 = 150V
SDR622 = 200V
Hyper Fast Recovery: 35nsec Maximum
3/
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Isolated Package
Higher Voltages Available
Available in Centertap Versions
Replaces 1N5816 and 1N5816R
TX, TXV, and S-Level Screening Available
2/
Family/Voltage
SDR620 = 100V
Maximum Ratings
4/
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Symbol
SDR620J, M & Z
SDR621J, M & Z
SDR622J, M & Z
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& T
STG
J
(TO-257)
M
(TO-254)
Z
(TO-254Z)
R
θJC
Value
100
150
200
20
300
-65 to +200
2.1
1.2
1.2
Units
Volts
Amps
Amps
ºC
ºC/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C, per leg)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
TO-257 (J)
TO-254 (M)
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0031C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR620J, M & Z
Thru
SDR622J, M & Z
Symbol
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
t
RR
C
J
Electrical Characteristics (per leg)
4/
Instantaneous Forward Voltage Drop
300µsec Pulse, I
F
= 10A, T
A
= 25 ºC
300µsec Pulse, I
F
= 20A, T
A
= 25 ºC
300µsec Pulse, I
F
= 10A, T
A
= 100 ºC
300µsec Pulse, I
F
= 10A, T
A
= -55 ºC
T
A
= 25 ºC
T
A
= 100 ºC
Max
1.00
1.20
0.90
1.15
10
100
35
250
Units
V
DC
µA
µA
nsec
pF
Reverse Leakage Current
(Rated V
R
, 300µsec Pulse Minimum)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA)
Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC, f = 1MHz)
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
Figure 1- Optional Lead Bends
Code
__
R
Table 1- PIN ASSIGNMENT
Configuration
Normal
Reverse
Pin 1
Cathode
Cathode
Pin 2
Anode
Cathode
Pin 3
Anode
Anode
Suffix JDB, MDB & ZDB
Suffix JUB, MUB & ZUB
TO-257 (Suffix J) Outline:
TO-254 (Suffix M) Outline:
TO-254Z (Suffix Z) Outline:
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0031C
DOC
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