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SDR6306TX

Rectifier Diode, 1 Phase, 1 Element, 70A, 150V V(RRM), Silicon, DO-5, HERMETIC SEALED PACKAGE-1

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

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器件参数
参数名称
属性值
厂商名称
SSDI
零件包装代码
DO-5
包装说明
HERMETIC SEALED PACKAGE-1
针数
1
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
EFFICIENCY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-5
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
800 A
元件数量
1
相数
1
端子数量
1
最大输出电流
70 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
文档预览
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR6304 thru SDR6307
Part Number/Ordering Information
1/
SDR
__ __
Designer’s Data Sheet
│ └
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Family/Voltage
6304 = 50V
6305 = 100V
6306 = 150V
6307 = 200V
70 Amp
Ultra Fast Recovery Rectifier
50 - 200 Volts
50 nsec
Features
:
Fast Recovery: 50nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
Hermetically Sealed
For High Efficiency Applications
Replacement for 1N6304, 1N6305, and 1N6306
2/
TX, TXV, and S-Level Screening Available
Maximum Ratings
3/
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 100µA
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
SDR6304
SDR6305
SDR6306
SDR6307
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& T
STG
R
θJC
Value
50
100
150
200
70
800
Units
Volts
Amps
Amps
ºC
ºC/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C)
Operating & Storage Temperature
Thermal Resistance
(Junction to Case)
-55 to +175
0.8
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C.
DO-5
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0141A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR6306
Symbol
V
F1
V
F2
T
A
= 25 ºC
T
A
= 150 ºC
T
A
= 25 ºC
I
R1
I
R2
t
RR
C
J
Electrical Characteristics
3/
Maximum Instantaneous Forward Voltage Drop
(I
F
=70Adc, T
A
= 25 ºC, 300-500μs Pulse)
Maximum Instantaneous Forward Voltage Drop
(I
F
=70Adc, T
A
= 150 ºC, 300-500μs Pulse)
Maximum Reverse Leakage Current
(Rated V
R,
300μs minimum pulse)
Maximum Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA)
Maximum Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC, f = 1MHz)
Value
0.975
0.84
25
30
50
700
Units
V
DC
V
DC
μA
mA
nsec
pF
Table 1- PIN ASSIGNMENT
Code
__
R
Configuration
Normal
Reverse
Terminal
Anode
Cathode
Stud
Cathode
Anode
DO-5 Outline (Normal Pin Configuration Shown):
.687
.667
1.00 MAX
.060 MIN
.453
.422
Ø.220
.249
.667 .375
MAX MAX
1/4-28 UNF-2A
.200
.115
.080 MAX
Ø.175
.140
.450
MAX
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0141A
DOC
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