STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
STD/SDT60GK08
STD/SDT60GK12
STD/SDT60GK14
STD/SDT60GK16
STD/SDT60GK18
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.45A
di
G
/dt=0.45A/us
Test Conditions
Maximum Ratings
100
60
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=150A
1500
1600
1350
1450
11200
10750
9100
8830
150
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=I
TAVM
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=300us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
90
V~
Nm/lb.in.
g
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
5
1.57
0.85
3.7
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
1.5
1.6
100
200
0.2
10
T
VJ
=25
o
C; t
p
=10us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=T
VJM
; I
T
=150A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=20V/us; V
D
=2/3V
DRM
T
VJ
=T
VJM
; I
T
, I
F
=50A; -di/dt=3A/us
typ.
450
200
2
150
100
24
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
0.45
0.225
0.65
0.325
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
I
RRM
, I
DRM
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
I
T
, I
F
=200A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=125
o
C)
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 2 i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: I
GT
, T
VJ
= 125 C
V
V
G
2: I
GT
, T
VJ
= 25 C
3: I
GT
, T
VJ
= -40 C
3
1
1
4
2
5
6
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125 C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
mA
10
4
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
T
VJ
= 25 C
s
t
gd
typ.
100
Limit
10
3 x STD/SDT60
1
10
100
I
G
mA
1000
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT60
STD/SDT60
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.45
0.47
0.49
0.505
0.52
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.014
0.026
0.41
t
i
(s)
0.015
0.0095
0.175
STD/SDT60
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.65
0.67
0.69
0.705
0.72
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.014
0.026
0.41
0.2
t
i
(s)
0.015
0.0095
0.175
0.67
